FFH30S60STU

Stealth II Rectifier 30 A, 600 V FFH30S60S Description The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. www.onsemi.com Features • High Speed Switching, trr < 35 ns @ IF = 30 A • High Reverse Voltage and High Reliability • This Device is Pb−Free and is RoHS Compliant TO−247 2 LEAD CASE 340CL Applications • • • • MARKING DIAGRAM General Purpose Switching Mode Power Supply Boost Diode in Continuous Mode Power Factor Corrections Power Switching Circuits $Y&Z&3&K F30S60S ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current @ TC = 102°C IF(AV) 30 A Non−Repetitive Peak Surge Current 60 Hz Single Half−Sine Wave IFSM 300 A Operating and Storage Temperature Range TJ, TSTG −65 to +175 °C DC Blocking Voltage $Y &Z &3 &K F30S60S = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Cathode THERMAL CHARACTERISTICS Parameter Symbol Value Unit Maximum Thermal Resistance, Junction to Case RqJC 1.1 °C/W © Semiconductor Components Industries, LLC, 2007 February, 2020 − Rev. 5 1 2. Anode ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FFH30S60S/D FFH30S60S PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FFH30S60STU F30S60S TO−247−2L N/A N/A 50 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VFM (Note 1) IF = 30 A IF = 30 A TC = 25°C TC = 125°C − − 2.1 1.6 2.6 − V IRM (Note 1) VR = 600 V VR = 600 V TC = 25°C TC = 125°C − − − − 100 500 mA IF = 1 A, di/dt = 100 A/ms, VR = 30 V TC = 25°C − 25.2 30 ns trr Irr S factor Qrr IF = 30 A, di/dt = 200 A/ms, VR = 390 V TC = 25°C − − − − 26 2.4 0.9 43 − − − − ns A trr Irr S factor Qrr IF = 30 A, di/dt = 200 A/ms, VR = 390 V − − − − 75.1 6.3 0.9 238 − − − − nC 7.2 − − mJ trr WAVL TC = 125°C Avalanche Energy (L = 40 mH) nC ns A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2% TEST CIRCUIT AND WAVEFORMS Figure 1. trr Test Circuit Figure 2. trr Waveforms and Definitions Figure 3. Avalanche Energy Test Circuit Figure 4. Avalanche Current and Voltage Definitions www.onsemi.com 2 FFH30S60S TYPICAL PERFORMANCE CHARACTERISTICS 1000 200 o TC = 125 C o o 75 C o 25 C 10 1 0 1 2 3 4 Forward Voltage, VF [V] 1 Reverse Recovery Time, t rr [ns] Capacitances , Cj [pF] 210 140 70 200 300 400 Reverse Voltage, VR [V] 500 600 o TC = 125 C 80 o TC = 75 C 60 o TC = 25 C 40 20 100 Figure 7. Typical Junction Capacitance 100 150 200 di/dt [A/ ms] 250 300 Figure 8. Typical Reverse Recovery Time vs. di/dt 10 50 8 Average Forward Current, I F(AV) [A] Reverse Recovery Current, I rr [A] 100 100 280 o TC = 125 C 6 o TC = 75 C 4 o TC = 25 C 2 0 10 Figure 6. Typical Reverse Current vs. Reverse Voltage Typical Capacitance at 0V = 271 pF 1 10 Reverse Voltage, VR [V] o TC = 25 C 0.1 350 0.1 o TC = 75 C 10 0.01 5 Figure 5. Typical Forward Voltage Drop vs. Forward Current 0 TC = 125 C 100 Reverse Current, I R[m A] Forward Current, I F [A] 100 100 150 200 di/dt [A/ ms] 250 40 30 20 10 0 25 300 Figure 9. Typical Reverse Recovery Current vs. di/dt 50 75 100 125 150 175 o Case temperature, TC [ C] 200 Figure 10. Forward Current Derating Curve www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 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