STEALTHt Diode
50 A, 600 V
FFH50US60S-F085
Description
The FFH50US60S−F085 is a STEALTHt diode optimized for low
loss performance in output rectification. The STEALTH family
exhibits low reverse recovery current(IRR),low VF and soft recovery
under typical operating conditions. It has a low forward−voltage drop
and is of silicon nitride passivated.
This device is intended for use as a freewheel/clamping diode
in various automotive switching power supplies and other power
switching applications. Its low stored charge as well as Stealth and soft
recovery characteristics minimize ringing and electrical noise while
reduce the overall power loss.
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ANODE
Features
•
•
•
•
•
CATHODE
Stealth Recovery, trr = 163 ns ( Typ.) @ IF = 50 A)
Low Forward Voltage( VF = 1.69 V (Max.) @ IF = 50 A )
Avalanche Energy Rated
AEC−Q101 Qualified
This Device is Pb−Free
TO−247−2L
MARKING DIAGRAM
Applications
•
•
•
•
$Y&Z&3&K
50US60S
Automotive DCDC Converter
Automotive On Board Charger
Switching Power Supply
Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
600
V
Working Peak Reverse Voltage
VRWM
600
V
VR
600
V
Average Rectified Forward Current
(TC = 25 °C)
IF(AV)
50
A
Non−repetitive Peak Surge Current
(Halfwave 1 Phase 50 Hz)
IFSM
150
A
Avalanche Energy
(1 A, 40 mH)
EAVL
20
mJ
TJ, TSTG
−55 to
+175
°C
DC Blocking Voltage
Operating Junction and Storage
Temperature
1. Cathode
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
March, 2020 − Rev. 4
$Y
&Z
&3
&K
50US60S
1
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
2. Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
FFH50US60S−F085/D
FFH50US60S−F085
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tube
Quantity
FFH50US60S
FFH50US60S−F085
TO247−2L
−
30
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
IR
Test Conditions
Instantaneous Reverse Current
VFM
(Note 1)
Instantaneous Forward Voltage
trr
(Note 2)
Reverse Recovery Time
ta
tb
Qrr
VR = 600 V
IF = 50 A
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
Unit
TC = 25°C
−
−
100
mA
TC = 175°C
−
−
1000
mA
TC = 25°C
−
1.27
1.69
V
TC = 175°C
−
1.19
1.57
V
IF = 1 A,
di/dt = 200 A/ms,
VR = 390 V
TC = 25°C
−
41
82
ns
IF = 50 A,
di/dt = 200 A/ms,
VR = 390 V
TC = 25°C
−
163
−
ns
TC = 175°C
−
364
−
ns
IF = 50 A,
di/dt = 200 A/ms,
VR = 390 V
TC = 25°C
−
65
98
886
−
−
−
ns
ns
nC
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TEST CIRCUITS AND WAVEFORMS
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
L
DUT
RG
CURRENT
SENSE
VGE
dIF
Trr
dt
ta
0
VDD
−
IGBT
t1
IF
+
tb
0.25I RM
IRM
t2
Figure 1. Trr Test Circuit
Figure 2. Trr Waveforms and Definitions
I=1A
L = 40 mH
R < 0.1 W
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
VAVL
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
−
t0
Figure 3. Avalanche Energy Test Circuit
t1
t2
t
Figure 4. Avalanche Current and Voltage Waveforms
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2
FFH50US60S−F085
IF, Forward Current (A)
IR, Reverse Current (mA)
TYPICAL PERFORMANCE CHARECTERISTICS
VF, Forward Voltage (V)
VR, Reverse Voltage (V)
Figure 6. Typical Reverse
Current vs. Reverse Voltage
Cj, Capacitances (pF)
Trr, Reverse Recovery Time (ns)
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
di/dt (A/ms)
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse
Recovery Time vs. di/dt
Irr, Reverse Recovery Current (A)
IF(AV), Average Forward Current (A)
VR, Reverse Voltage (V)
TC, Case Temperature (5C)
di/dt (A/ms)
Figure 9. Typical Reverse Recovery
Current vs. di/dt
Figure 10. Forward Current Derating Curve
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3
FFH50US60S−F085
Qrr, Reverse Recovery Charge (nC)
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
di/dt, (A/ms)
ZthJC, Thermal Response (t)
Figure 11. Reverse Recovery Charge
t1, Square Wave Pulse Duration (s)
Figure 12. Transient Thermal Response Curve
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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