STEALTHt Diode
50 A, 600 V
FFH50US60S
Description
The FFH50US60S is a STEALTHt diode optimized for low loss
performance in output rectification. The STEALTH family exhibits
low reverse recovery current (IRR), low VF and soft recovery under
typical operating conditions. This device is intended for use
as an output rectification diode in Telecom power supplies and other
power switching applications. Lower VF and IRR reduces diode losses.
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CATHODE
(BOTTOM
SIDE METAL)
Features
•
•
•
•
•
•
Stealth Recovery, trr = 113 ns (@ IF = 50 A)
Max Forward Voltage, VF = 1.54 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
Operating Temperature = 175°C
Avalanche Energy Rated
This Device is Pb−Free and is RoHS Compliant
ANODE
CATHODE
TO−247
JEDEC STYLE
2 LEAD
CASE 340 CL
Applications
•
•
•
•
MARKING DIAGRAM
SMPS, Welders
Power Factor Correction
Uninterruptible Power Supplies
Motor Drives
$Y&Z&3&K
50US60S
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
600
V
Working Peak Reverse Voltage
VRWM
600
V
VR
600
V
Average Rectified Forward Current
(TC = 120°C)
IF(AV)
50
A
Repetitive Peak Surge Current
(20 kHz Square Wave )
IFRM
100
A
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60 Hz)
IFSM
500
A
Power Dissipation
PD
200
W
Avalanche Energy
(1 A, 40 mH)
EAVL
20
mJ
TJ, TSTG
−55 to 175
°C
TL
300
°C
TPKG
260
°C
DC Blocking Voltage
Operating and Storage Temperature
Range
Maximum Temperature for Soldering Leads
at 0.063 in (1.6 mm) from Case for 10 s
Maximum Temperature for Soldering
Package Body for 10 s
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2003
March, 2020 − Rev. 3
1
$Y
&Z
&3
&K
50US60S
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
K
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
FFH50US60S/D
FFH50US60S
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Packing
Methode
Reel Size
Tape Width
Quantity
FFH50US60S
FFH50US60S
TO247−2L
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
TC = 25°C
−
−
100
mA
TC = 125°C
−
−
1
mA
TC = 25°C
−
1.38
1.54
V
TC = 125°C
−
1.37
1.53
V
VR = 10 V, IF = 0 A
−
110
−
pF
IF = 1 A, dIF/dt = 100 A/ms, VR = 15 V
−
47
80
ns
IF = 50 A, dIF/dt = 100 A/ms, VR = 15 V
−
75
124
ns
IF = 50 A, dIF/dt = 200 A/ms, VR = 390 V,
TC = 25°C
−
113
−
ns
−
9.6
−
A
−
0.9
−
mC
−
235
−
ns
−
1.5
−
−
OFF STATE CHARACTERISTICS
IR
Instantaneous Reverse Current
VR = 600 V
ON CHARACTERISTICS
VF
Instantaneous Forward Voltage
IF = 50 A
DYNAMIC CHARACTERISTICS
CJ
Junction Capacitance
SWITCHING CHARACTERISTICS
Trr
Reverse Recovery Time
Trr
Reverse Recovery Time
IRR
Reverse Recovery Current
QRR
Reverse Recovered Charge
Trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IF = 50 A, dIF/dt = 200 A/ms, VR = 390 V,
TC = 125°C
IRR
Reverse Recovery Current
−
15
−
A
QRR
Reverse Recovered Charge
−
2.3
−
mC
−
110
−
ns
−
0.8
−
−
Trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IF = 50 A, dIF/dt = 1000 A/ms,
VR = 390 V, TC = 125°C
IRR
Reverse Recovery Current
−
46
−
A
QRR
Reverse Recovered Charge
−
3.1
−
mC
Maximum di/dt during tb
−
1000
−
A/ms
dIM/dt
THERMAL CHARACTERISTICS
RqJC
Thermal Resistance Junction to Case
−
−
0.75
°C/W
RqJA
Thermal Resistance Junction to Ambient TO−247
−
−
30
°C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FFH50US60S
TYPICAL PERFORMANCE CURVES
100
1000
IR, Reverse Current (mA)
IF, Forward Current (A)
90
80
70
60
50
175oC
40
125oC
30
o
75 C
20
25oC
175oC
100
150oC
125oC
10
100oC
1
75oC
0.1
10
25oC
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
0.01
100
2.0
200
VF, Forward Voltage (V)
t, Recovery Times (ns)
100
80
60
40
20
ta at dIF/dt = 200A/ms, 500A/ms, 800A/ms
10
20
30
40
50
60
70
80
90
VR = 390V, TC = 125oC
tb at I F = 100A, 50A, 25A
175
150
125
100
75
50
ta at IF = 100A, 50A, 25A
25
100
0
200
400
600
800
1000
1200
IF, Forward Current (A)
dIF/dt, Current Rate of Change (A/ms)
Figure 3. ta and tb Curves vs. Forward Current
Figure 4. ta and tb Curves vs. dlF/dt
50
IRR, Max Reverse Recovery Current (A)
t, Recovery Times (ns)
120
0
600
200
140
0
IRR, Max Reverse Recovery Current (A)
225
tb at dIF/dt = 200A/ms, 500A/ms, 800A/ms
160
500
Figure 2. Reverse Current vs. Reverse Voltage
VR = 390V, TC = 125oC
180
400
VR, Reverse Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
200
300
VR = 390V, TC = 125oC
dIF/dt = 800A/ms
40
30
dIF/dt = 500A/ms
20
dIF/dt = 200A/ms
10
0
0
10
20
30
40
50
60
70
80
90
100
60
VR = 390V, TC = 125oC
50
40
IF = 100A
30
IF = 50A
20
IF = 25A
10
0
0
200
400
600
800
1000
1200
IF, Forward Current (A)
dIF/dt, Current Rate of Change (A/ms)
Figure 5. Maximum Reverse Recovery
Current vs. Forward Current
Figure 6. Maximum Reverse
Recovery Current vs. dIF/dt
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3
FFH50US60S
TYPICAL PERFORMANCE CURVES
VR = 390V, TC = 125oC
2.0
1.8
IF = 100A
1.6
IF = 50A
1.4
IF = 25A
1.2
1.0
0.8
0.6
0
200
400
600
800
1000
1200
VR = 390V, TC = 125oC
5
4
IF = 100A
3
IF = 50A
2
IF = 25A
1
0
0
200
dlF/dt, Current Rate of Change (A/ms)
800
1000
1200
Figure 8. Reverse Recovery Charge vs. dlF/dt
−22
1400
f = 1MHZ
IRM(REC) , Max Reverse
Recovery Current (A)
1000
800
600
400
200
−26
180
IF = 50A, VR = 390V, dIF /dt = 600A/usec
−24
1200
170
160
IRM(REC)
−28
150
−30
140
−32
130
−34
120
110
−36
−38
tRR
100
90
−40
0.1
1
10
−42
25
100
80
50
VR, Reverse Voltage (V)
75
100
125
150
175
TC, Case Temperature (5C)
Figure 9. Junction Capacitance vs. Reverse Voltage
IF(AV), Average Forward Current (A)
CJ, Junction Capacitance (pF)
600
dlF/dt, Current Rate of Change (A/ms)
Figure 7. Reverse Recovery Softness Factor vs. dIF/dt
0
0.03
400
Figure 10. Maximum Reverse Recovery
Current and trr vs. Case Temperature
60
50
40
30
20
10
0
115
125
135
145
155
165
TC, Case Temperature (5C)
Figure 11. DC Current Derating Curve
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4
175
T, Recovery Times (ns)
2.2
6
QRR, Reverse Recovered Charge (mC)
S, Reverse Recovery Softness Factor
2.4
FFH50US60S
ZqJA, Normalized Thermal Impedance
TYPICAL PERFORMANCE CURVES
1.0
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJA x RqJA+ TA
SINGLE PULSE
0.01
10−5
10−4
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (s)
Figure 12. Normalized Maximum Transient Thermal Impedance
TEST CIRCUITS AND WAVEFORMS
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
L
DUT
RG
CURRENT
SENSE
+
VGE
dIF
Trr
dt
ta
0
VDD
−
MOSFET
t1
IF
tb
0.25I RM
IRM
t2
Figure 13. Trr Test Circuit
I=1A
L = 40 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL)L)
CURRENT
SENSE
Figure 14. Trr Waveforms and Definitions
VAVL
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
−
t0
Figure 15. Avalanche Energy Test Circuit
t1
t2
t
Figure 16. Avalanche Current and Voltage Waveforms
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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