FFSB0865A

DATA SHEET www.onsemi.com Silicon Carbide Schottky Diode 1.,3. Cathode 650 V, 8 A 2. Anode Schottky Diode FFSB0865A 3 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 1 TO−263, 3−LEAD CASE 418BK MARKING DIAGRAM Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits © Semiconductor Components Industries, LLC, 2017 November, 2021 − Rev. 5 2 $Y&Z&3&K FFSB 0865A $Y &Z &3 &K FFSB0865A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FFSB0865A/D FFSB0865A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 49 mJ Continuous Rectified Forward Current @ TC < 152°C 8 A Continuous Rectified Forward Current @ TC < 135°C 15.4 Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 750 A TC = 150°C, 10 ms 730 A Symbol VRRM EAS IF IF, Max IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 49 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 28 A Ptot Power Dissipation TC = 25°C 136 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 23 W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction to Case, Max RqJC Value Unit 1.1 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 8 A, TC = 25°C − 1.50 1.75 V IF = 8 A, TC = 125°C − 1.6 2.0 IF = 8 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 27 − nC Total Capacitance VR = 1 V, f = 100 kHz − 463 − pF VR = 200 V, f = 100 kHz − 48 − VR = 400 V, f = 100 kHz − 38 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number FFSB0865A Top Marking Package Reel Size Tape Width Shipping† FFSB0865A D2PAK−3 330 mm 24 mm 800 Units / Tape & Reel (TO−263, 3−LEAD) Pb−Free/Halogen Free †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FFSB0865A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 8 6 4 TJ = 175 oC 2 TJ = 25 oC TJ = 125 oC TJ = 75 oC TJ = −55oC −6 10 −7 10 TJ = 75 oC −8 10 0.5 1.0 1.5 10 2.0 200 Figure 1. Forward Characteristics 400 500 600 650 Figure 2. Reverse Characteristics 140 PTOT, POWER DISSIPATION (W) 150 D = 0.1 100 D = 0.2 D = 0.3 50 D = 0.5 D = 0.7 D = 1 0 25 50 75 100 125 150 120 100 80 60 40 20 0 25 175 o 50 75 100 125 150 175 o TC, CASE TEMPERATURE (C) TC, CASE TEMPERATURE (C) Figure 3. Current Derating Figure 4. Power Derating 40 1000 30 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 300 TJ = −55 oC VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 20 10 0 TJ = 125 oC TJ = 25 oC −9 0 0.0 IF, PEAK FORWARD CURRENT (A) TJ = 175 oC 0 100 200 300 400 500 100 10 0.1 600650 VR, REVERSE VOLTAGE (V) 1 10 100 650 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSB0865A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY (mJ) 10 8 6 4 2 0 0 100 200 300 400 500 600650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 D=0.5 DUTY CYCLE−DESCENDING ORDER −1 10 −2 10 D=0.01 D=0.2 D=0.1 D=0.05 D=0.02 PDM t1 t2 NOTES: −3 10 SINGLE PULSE −4 10 ZqJC(t) = r(t) x RqJC RqJC = 1.1 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t 1 / t2 −6 10 −5 −4 10 −3 10 −2 10 −1 10 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK2 (TO−263−2L) CASE 418BK ISSUE O DATE 02 AUG 2018 GENERIC MARKING DIAGRAM* XXXXXXXXG AYWW XXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON93788G D2PAK2 (TO−263−2L) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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