FFSB1065B-F085

Silicon Carbide Schottky Diode 650 V, 10 A FFSB1065B-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1., 3. Cathode 2. Anode Schottky Diode Features • • • • • • • • Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 2 D2PAK2 (TO−263−2L) CASE 418BK MARKING DIAGRAM Applications $Y&Z&3&K FFSB 1065B • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters $Y &Z &3 &K FFSB1065B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 August, 2020 − Rev. 2 1 Publication Order Number: FFSB1065B−F085/D FFSB1065B−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 49 mJ Continuous Rectified Forward Current @ TC < 25°C 27 A Symbol VRRM EAS IF IF, Max Continuous Rectified Forward Current @ TC < 146°C 10 Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 650 A TC = 150°C, 10 ms 570 A IF,SM Non-Repetitive Forward Surge Current TC = 25°C Half-Sine Pulse, tp = 8.3 ms 45 A Ptot Power Dissipation TC = 25°C 79 W TC = 150°C 13 W −55 to +175 °C TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 1.9 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Forward Voltage Reverse Current Min Typ Max Unit IF = 10 A, TC = 25°C Test Condition − 1.38 1.7 V IF = 10 A, TC = 125°C − 1.6 2.0 IF = 10 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − 0.5 40 VR = 650 V, TC = 125°C − 1 80 mA VR = 650 V, TC = 175°C − 2 160 Total Capacitive Charge V = 400 V − 25 − nC Total Capacitance VR = 1 V, f = 100 kHz − 421 − pF VR = 200 V, f = 100 kHz − 46 − VR = 400 V, f = 100 kHz − 35 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number FFSB1065B−F085 Top Marking Package Shipping* FFSB1065B D2PAK−3 800 / Tape & Reel (Pb-Free / Halogen Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2 FFSB1065B−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 TJ = −55oC TJ = 175 oC TJ = 25 oC 15 TJ = 125 oC IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 20 TJ = 75 oC 10 5 0 −6 10 TJ = 175 oC −7 10 TJ = 125 oC TJ = 75 oC −8 10 TJ = 25 oC TJ = −55 oC −9 0 1 2 3 10 4 200 300 VF, FORWARD VOLTAGE (V) Figure 1. Forward Characteristics PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 600 650 100 D = 0.1 90 D = 0.2 60 D = 0.3 D = 0.5 30 D = 0.7 0 25 D=1 50 75 100 125 150 80 60 40 20 0 25 175 TC, CASE TEMPERATURE (5C) 50 75 100 125 150 175 TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Derating 40 1000 30 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 500 Figure 2. Reverse Characteristics 120 20 10 0 400 VR, REVERSE VOLTAGE (V) 0 100 200 300 400 500 100 10 0.1 600 650 1 10 100 650 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSB1065B−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance Stored Energy r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Ec, CAPACITIVE ENERGY (mJ) 10 2 1 DUTY CYCLE−DESCENDING ORDER D=0.5 PDM 0.1 0.01 1E−3 −6 10 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 1.9 5C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1/t2 SINGLE PULSE −5 10 −4 −3 10 10 −2 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 −1 10 1 FFSB1065B−F085 TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK2 (TO−263−2L) CASE 418BK ISSUE O DATE 02 AUG 2018 GENERIC MARKING DIAGRAM* XXXXXXXXG AYWW XXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON93788G D2PAK2 (TO−263−2L) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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