FFSB2065B-F085

Silicon Carbide Schottky Diode 650 V, 20 A FFSB2065B-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1., 3. Cathode 2. Anode Schottky Diode Features • • • • • • • • Max Junction Temperature 175°C Avalanche Rated 94 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 2 D2PAK2 (TO−263−2L) CASE 418BK MARKING DIAGRAM Applications $Y&Z&3&K FFSB 2065B • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol VRRM EAS IF IF, Max IF, SM Ptot TJ, TSTG Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 94 mJ Continuous Rectified Forward Current @ TC < 142°C 20 A Continuous Rectified Forward Current @ TC < 135°C 22.8 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 882 TC = 150°C, 10 ms 798 Non−Repetitive Forward Surge Current TC = 25°C Half−Sine Pulse, tp = 8.3 ms 84 A Power Dissipation TC = 25°C 153 W TC = 150°C 25.5 Operating Junction and Storage Temperature Range A −55 to +175 $Y &Z &3 &K FFSB2065B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 94 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.4 A, V = 50 V. © Semiconductor Components Industries, LLC, 2018 August, 2020 − Rev. 2 1 Publication Order Number: FFSB2065B−F085/D FFSB2065B−F085 THERMAL CHARACTERISTICS Symbol RqJC Parameter Ratings Unit 0.98 °C/W Thermal Resistance, Junction to Case, Max ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR Parameter Forward Voltage Reverse Current Min. Typ. Max. Unit IF = 20 A, TC = 25°C Test Conditions − 1.38 1.7 V IF = 20 A, TC = 125°C − 1.6 2.0 IF = 20 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − 0.5 40 VR = 650 V, TC = 125°C − 1 80 mA VR = 650 V, TC = 175°C − 2 160 QC Total Capacitive Charge V = 400 V − 51 − nC Ctot Total Capacitance VR = 1 V, f = 100 kHz − 866 − pF VR = 300 V, f = 100 kHz − 80 − VR = 600 V, f = 100 kHz − 70 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping† FFSB2065B−F085 FFSB2065B D2PAK−3 800/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FFSB2065B−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10−5 TJ = −55°C TJ = 25°C 30 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 40 TJ = 175°C TJ = 75°C TJ = 125°C 20 10 0 0.5 0 1 1.5 2 2.5 VF, FORWARD VOLTAGE (V) 10−6 TJ = 175°C 10−7 TJ = 125°C TJ = 75°C 10−8 TJ = 25°C 10−9 100 3 Figure 1. Forward Characteristics PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 300 400 500 VR, REVERSE VOLTAGE (V) 600 650 180 D = 0.1 150 D = 0.2 D = 0.3 100 D = 0.5 50 D=1 D = 0.7 25 50 75 100 125 150 120 60 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (5C) TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Derating 90 5000 1000 CAPACITIANCE (pF) QC, CAPACITIVE CHARGE (nC) 200 Figure 2. Reverse Characteristics 200 0 TJ = −55°C 60 30 100 0 0 100 200 300 400 500 VR, REVERSE VOLTAGE (V) 50 0.1 600 650 Figure 5. Capacitive Charge vs. Reverse Voltage 1 10 100 VR, REVERSE VOLTAGE (V) Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSB2065B−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) EC, CAPACITIVE ENERGY (mJ) 20 15 10 5 0 0 100 600 650 300 400 500 200 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE − DESCENDING ORDER D = 0.5 PDM 0.1 D = 0.2 D = 0.1 t1 t2 D = 0.05 0.01 D = 0.02 NOTES: ZqJC (t) = r(t) × RqJC RqJC = 0.98°C/W Peak TJ = PDM × ZqJC (t) + TC Duty cycle, D = t1/t2 D = 0.01 SINGLE PULSE 0.001 10−6 10−5 10−4 10−3 10−2 10−1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK2 (TO−263−2L) CASE 418BK ISSUE O DATE 02 AUG 2018 GENERIC MARKING DIAGRAM* XXXXXXXXG AYWW XXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON93788G D2PAK2 (TO−263−2L) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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