FFSB2065BDN-F085

FFSB2065BDN-F085 Silicon Carbide Schottky Diode 650 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1. Anode 2. Cathode/ 3. Anode Case Schottky Diode Features • • • • • • • 2 Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified and PPAP Capable 1 3 D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ MARKING DIAGRAM Applications • Automotive BEV−EV • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters $Y&Z&3&K FFSB 2065BDN MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol VRRM EAS IF IF, Max IF, SM Ptot Parameter Ratings Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 49 mJ A Continuous Rectified Forward Current @ TC < 25°C 23.6 @ TC < 140°C 10 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 600 TC = 150°C, 10 ms 554 Half−Sine Pulse, Non−Repetitive tp = 8.3 ms Forward Surge Current, TC = 25°C Power Dissipation A 45 A TC = 25°C 75 W TC = 150°C 12.5 TJ, TSTG Operating and Storage Temperature Range $Y &Z &3 &K FFSB2065BDN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. °C −55 to +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V. © Semiconductor Components Industries, LLC, 2013 September, 2019 − Rev. 2 1 Publication Order Number: FFSB2065BDN−F085/D FFSB2065BDN−F085 THERMAL CHARACTERISTICS Symbol RqJC Parameter Ratings Unit 2.0 °C/W Thermal Resistance, Junction to Case, Max ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted − per leg) Parameter Min Typ. Max. Unit IF = 10 A, TC = 25°C − 1.38 1.75 V IF = 10 A, TC = 125°C − 1.6 2.0 IF = 10 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − 0.5 40 VR = 650 V, TC = 125°C − 1 80 VR = 650 V, TC = 175°C − 2 160 Total Capacitive Charge V = 400 V − 25 − nC Total Capacitance VR = 1 V, f = 100 kHz − 421 − pF VR = 200 V, f = 100 kHz − 46 − VR = 400 V, f = 100 kHz − 35 − Symbol VF IR QC C Forward Voltage Reverse Current Test Conditions mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping† FFSB2065BDN−F085 FFSB2065BDN D2PAK 800 Units/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FFSB2065BDN−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10−5 TJ = −55°C TJ = 25°C 15 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 20 TJ = 175°C TJ = 125°C TJ = 75°C 10 5 0 1 2 3 1.5 2.5 VF, FORWARD VOLTAGE (V) 0.5 0 3.5 10−6 10−7 TJ = 125°C TJ = 25°C 4 300 400 500 VR, REVERSE VOLTAGE (V) 600 650 Figure 2. Reverse Characteristics 100 PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) TJ = −55°C 10−9 200 120 D = 0.1 90 D = 0.2 60 D = 0.3 D = 0.5 30 D=1 D = 0.7 0 25 50 75 100 125 150 80 60 40 20 0 25 175 50 75 100 125 TC, CASE TEMPERATURE (5C) TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Derating 150 175 1000 40 30 CAPACITIANCE (pF) QC, CAPACITIVE CHARGE (nC) TJ = 75°C 10−8 Figure 1. Forward Characteristics 20 10 0 TJ = 175°C 0 100 200 300 400 500 100 10 0.1 600 650 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage 1 10 100 VR, REVERSE VOLTAGE (V) Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSB2065BDN−F085 TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) EC, CAPACITIVE ENERGY (mJ) 10 8 6 4 2 0 0 100 300 200 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE − DESCENDING ORDER D = 0.5 PDM D = 0.2 0.1 D = 0.1 t1 t2 D = 0.05 NOTES: ZqJC (t) = r(t) × RqJC RqJC = 2.0°C/W Peak TJ = PDM × ZqJC (t) + TC Duty cycle, D = t1/t2 D = 0.02 0.01 D = 0.01 SINGLE PULSE 0.001 10−6 10−5 10−4 10−3 10−2 10−1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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