FFSB3065B
Silicon Carbide Schottky
Diode
650 V, 30 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
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1., 3. Cathode
2. Anode
Schottky Diode
Features
•
•
•
•
•
•
•
Max Junction Temperature 175°C
Avalanche Rated 144 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
1
2
D2PAK−2
(TO−263, 2−LEAD)
CASE 418BK
MARKING DIAGRAM
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
$Y&Z&3&K
FFSB
3065B
$Y
&Z
&3
&K
FFSB3065B
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
August, 2019 − Rev. 0
1
Publication Order Number:
FFSB3065B/D
FFSB3065B
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Value
Unit
Peak Repetitive Reverse Voltage
650
V
Single Pulse Avalanche Energy (Note 1)
144
mJ
Continuous Rectified Forward Current @ TC < 25°C
73
A
Symbol
VRRM
EAS
IF
Continuous Rectified Forward Current @ TC < 139°C
IF, Max
Non-Repetitive Peak Forward Surge Current
30
TC = 25°C, 10 ms
1100
A
TC = 150°C, 10 ms
1000
A
IF,SM
Non-Repetitive Forward Surge Current
TC = 25°C
Half-Sine Pulse, tp = 8.3 ms
120
A
Ptot
Power Dissipation
TC = 25°C
246
W
TC = 150°C
41
W
−55 to +175
°C
TJ, TSTG
Operating and Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 144 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 24 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case, Max
RqJC
Value
Unit
0.61
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
VF
IR
QC
C
Parameter
Forward Voltage
Reverse Current
Min
Typ
Max
Unit
IF = 30 A, TC = 25°C
Test Condition
−
1.38
1.7
V
IF = 30 A, TC = 125°C
−
1.6
2.0
IF = 30 A, TC = 175°C
−
1.72
2.4
VR = 650 V, TC = 25°C
−
0.5
40
VR = 650 V, TC = 125°C
−
1
80
mA
VR = 650 V, TC = 175°C
−
2
120
Total Capacitive Charge
V = 400 V
−
74
−
nC
Total Capacitance
VR = 1 V, f = 100 kHz
−
1280
−
pF
VR = 200 V, f = 100 kHz
−
139
−
VR = 400 V, f = 100 kHz
−
108
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
FFSB3065B
Top Marking
Package
Shipping*
FFSB3065B
D2PAK−2
800 / Tape & Reel
(Pb-Free / Halogen Free)
* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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2
FFSB3065B
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
60
−5
10
TJ = 25 oC
IR, REVERSE CURRENT (A)
IF, FORWARD CURRENT (A)
TJ = −55oC
TJ = 75 oC
40
TJ = 175 oC
TJ = 125 oC
20
0
0.0
−6
10
TJ = 175 oC
TJ = 125 oC
−7
10
TJ = 75 oC
TJ = 25 oC
−8
10
TJ = −55 oC
−9
0.5
1.0
1.5
2.0
2.5
10
3.0
100
200
VF, FORWARD VOLTAGE (V)
500
600 650
Figure 2. Reverse Characteristics
300
PTOT, POWER DISSIPATION (W)
250
IF, PEAK FORWARD CURRENT (A)
400
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics
D = 0.1
200
D = 0.2
150
D = 0.3
D = 0.5
100
D = 0.7
50
0
25
D=1
50
75
100
125
150
250
200
150
100
50
0
25
175
TC, CASE TEMPERATURE (5C)
50
75
100
125
150
175
TC, CASE TEMPERATURE (5C)
Figure 3. Current Derating
Figure 4. Power Derating
120
5000
90
CAPACITANCE (pF)
QC, CAPACITIVE CHARGE (nC)
300
60
30
1000
100
0
0
100
200
300
400
500
50
0.1
600 650
VR, REVERSE VOLTAGE (V)
1
10
100
650
VR, REVERSE VOLTAGE (V)
Figure 6. Capacitance vs. Reverse Voltage
Figure 5. Capacitive Charge vs. Reverse
Voltage
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3
FFSB3065B
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
20
10
0
0
100
200
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Ec, CAPACITIVE ENERGY (mJ)
30
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
PDM
0.1
0.01
1E−3
−6
10
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t1
t2
NOTES:
ZqJC(t) = r(t) x RqJC
RqJC = 0.61 5C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1/t2
SINGLE PULSE
−5
10
−4
−3
10
10
−2
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
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4
−1
10
1
FFSB3065B
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
Q1
CURRENT
SENSE
DUT
VAVL
R
+
VDD
IL
IL
I V
VDD
−
t0
t1
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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5
t2
t
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93788G
D2PAK2 (TO−263−2L)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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