FFSD0465A

Silicon Carbide Schottky Diode 650 V, 4 A FFSD0465A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1, 2, 4. Cathode 3. Anode Schottky Diode Features • • • • • • • 4 Max Junction Temperature 175°C Avalanche Rated 25 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 1 2 3 DPAK3 (TO−252, 3 LD) CASE 369AS MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFS D0465A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 25 mJ Continuous Rectified Forward Current @ TC < 160°C 4 A Continuous Rectified Forward Current @ TC < 135°C 7.6 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 360 A ORDERING INFORMATION TC = 150°C, 10 ms 330 A IF, SM Non−Repetitive Forward Surge Current Half−Sine Pulse, tP = 8.3 ms 38 A See detailed ordering and shipping information on page 2 of this data sheet. IF, RM Repetitive Forward Surge Current Half−Sine Pulse, tP = 8.3 ms 18 A Power Dissipation TC = 25°C 61 W Symbol VRRM EAS IF IF, Max Ptot TC = 150°C TJ,TSTG Operating and Storage Temperature Range 10 W −55 to +175 °C $Y &Z &3 &K FFSD0465A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 25 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 10 A, V = 50 V © Semiconductor Components Industries, LLC, 2018 January, 2020 − Rev. 4 1 Publication Order Number: FFSD0465A/D FFSD0465A THERMAL CHARACTERISTICS Symbol RqJC Parameter Value Unit Thermal Resistance, Junction to Case, Max. 2.46 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Test Condition Min Typ Max Unit IF = 4 A, TC = 25°C − 1.50 1.75 V IF = 4 A, TC = 125°C − 1.6 2.0 IF = 4 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 16 − nC Total Capacitance VR = 1 V, f = 100 kHz − 258 − pF VR = 200 V, f = 100 kHz − 29 − VR = 400 V, f = 100 kHz − 21 − Forward Voltage Reverse Current mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping* FFSD0465A FFSD0465A DPAK3 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10−6 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 4 3 2 1 TJ = 75°C TJ = 125°C 0 0.0 TJ = 175°C TJ = 25°C TJ = −55°C 0.5 1.0 1.5 VF, FORWARD VOLTAGE (V) 10−7 TJ = 175°C 10−8 TJ = 25°C TJ = 75°C 10−9 200 2.0 TJ = −55°C TJ = 125°C Figure 1. Forward Characteristics 300 400 500 VR, REVERSE VOLTAGE (V) Figure 2. Reverse Characteristics www.onsemi.com 2 600 650 FFSD0465A TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) 70 56 PTOT, POWER DISSIPATION (W) IP, PEAK FORWARD CURRENT (A) 70 D = 0.1 42 D = 0.2 D = 0.3 28 D = 0.5 14 D = 0.7 0 25 50 D=1 75 100 125 150 42 28 14 0 25 175 75 100 125 TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Derating 150 175 1000 CAPACITIANCE (pF) 20 15 10 5 0 0 100 200 300 400 500 600 650 100 50 0.1 VR, REVERSE VOLTAGE (V) 5 4 3 2 1 0 0 100 200 300 400 500 1 10 100 VR, REVERSE VOLTAGE (V) Figure 6. Capacitance vs. Reverse Voltage Figure 5. Capacitive Charge vs. Reverse Voltage EC, CAPACITIVE ENERGY (mJ) 50 TC, CASE TEMPERATURE (5C) 25 QC, CAPACITIVE CHARGE (nC) 56 600 650 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance Stored Energy www.onsemi.com 3 650 FFSD0465A TYPICAL CHARACTERISTICS (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (TJ = 25°C unless otherwise noted) 2 1 DUTY CYCLE − DESCENDING ORDER PDM 0.1 0.5 t1 0.2 t2 0.1 0.01 0.02 0.01 NOTES: ZqJC (t) = r(t) × RqJC RqJC = 2.46°C/W Peak TJ = PDM × ZqJC (t) + TC Duty cycle, D = t1/t2 0.05 SINGLE PULSE 0.001 10−6 10−5 10−4 10−3 10−2 10−1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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