FFSD0665B

Silicon Carbide Schottky Diode 650 V, 6 A FFSD0665B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1, 2, 4. Cathode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 24.5 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3. Anode Schottky Diode DPAK3 (TO−252, 3 LD) CASE 369AS Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 9.9 A, L = 0.5 mH, V = 50 V) Continuous Rectified Forward Current TC < 154 Non−Repetitive Peak Forward Surge Current TC = 25°C, tP = 10 ms Symbol Value Unit VRRM 650 V EAS 24.5 mJ IF 6.0 A TC < 135 9.1 IFM TC = 150°C, tP = 10 ms A 493 $Y &Z &3 &K FFSD0665B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code 442 Non−Repetitive Forward Surge Current (Half−Sine Pulse) TC = 25°C tP = 8.3 ms IFSM 28 A Power Dissipation TC = 25°C Ptot 75 W TC = 150°C Operating Junction and Storage Temperature Range $Y&Z&3&K FFS D0665B ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 12.5 TJ, Tstg −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2019 October, 2020 − Rev. 2 1 Publication Order Number: FFSD0665B/D FFSD0665B THERMAL RESISTANCE Parameter Symbol Value Unit RqJC 2.0 °C/W Typ Max Unit IF = 6.0 A, TJ = 25°C 1.38 1.7 V IF = 6.0 A, TJ = 125°C 1.53 2.0 IF = 6.0 A, TJ = 175°C 1.67 2.4 VR = 650 V, TJ = 25°C 0.5 40 VR = 650 V, TJ = 125°C 1.0 80 VR = 650 V, TJ = 175°C 2.0 160 Thermal Resistance, Junction−to−Case ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min ON CHARACTERISTICS VF IR Forward Voltage Reverse Current mA CHARGES, CAPACITANCES & GATE RESISTANCE QC Total Capacitive Charge Ctot VC = 400 V 16 nC VR = 1 V, f = 100 kHz 259 pF VR = 200 V, f = 100 kHz 29 VR = 400 V, f = 100 kHz 22 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PART MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method† Reel Size Tape Width Quantity FFSD0665B FFSD0665B DPAK3 Tape & Reel 330 mm 16 mm 2500 units †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FFSD0665B TYPICAL CHARACTERISTICS TJ = −55o C TJ = 25 o C 9 TJ = 75 o C I R , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 12 TJ = 175 o C TJ = 125o C 6 3 0 0.0 0.5 1.0 1.5 2.0 2.5 10 −6 10 −7 TJ = 175 o C 10 TJ = 75 o C TJ = 25 o C TJ = −55o C 10 3.0 TJ = 125o C −8 −9 0 100 V F , FORWARD VOLTAGE (V) 600 650 500 100 80 P TOT , POWER DISSIPATION (W) IF , PEAK FORWARD CURRENT (A) 400 Figure 2. Reverse Characteristics 100 D = 0.1 60 D = 0.2 D = 0.3 40 D = 0.5 20 D = 0.7 D = 1 25 50 75 100 125 150 80 60 40 20 0 175 25 o 50 75 100 125 150 175 o TC , CASE TEMPERATURE ( C) TC , CASE TEMPERATURE ( C) Figure 3. Current Derating Figure 4. Power Derating 25 1000 20 CAPACITANCE (pF) Q C , CAPACITIVE CHARGE (nC) 300 V R , REVERSE VOLTAGE (V) Figure 1. Forward Characteristics 0 200 15 10 5 0 0 100 200 300 400 500 100 10 600 650 V R , REVERSE VOLTAGE (V) 0.1 1 10 100 V R , REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSD0665B TYPICAL CHARACTERISTICS(continued) E C , CAPACITIVE ENERGY ( mJ) 6 4 2 0 0 100 200 300 400 500 600 650 V R , REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 0.001 D=0.01 SINGLE PULSE 10 −6 10 −5 10 −4 10 −3 10 −2 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response www.onsemi.com 4 10 −1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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