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FFSD0865A

FFSD0865A

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO252-3

  • 描述:

  • 数据手册
  • 价格&库存
FFSD0865A 数据手册
Silicon Carbide Schottky Diode 650 V, 8 A FFSD0865A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1, 2, 4. Cathode 3. Anode Schottky Diode Features • • • • • • • 4 Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 1 2 3 DPAK3 (TO−252, 3 LD) CASE 369AS MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFS D0865A $Y &Z &3 &K FFSD0865A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 January, 2020 − Rev. 3 1 Publication Order Number: FFSD0865A/D FFSD0865A Table 1. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter FFSD0865A Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 49 mJ Continuous Rectified Forward Current @ TC < 159°C 8 A Symbol VRRM EAS IF IF,Max Continuous Rectified Forward Current @ TC < 135°C 15 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 750 A TC = 150°C, 10 ms 730 A IF,SM Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 49 A IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 28 A Ptot Power Dissipation TC = 25°C 125 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 21 W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V. Table 2. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction−to−Case, Max. RqJC Rating Unit 1.2 °C/W Table 3. OPERATING CHARACTERISTICS (TC = 25°C, unless otherwise noted) Parameter Min Typ Max Unit IF = 8 A, TC = 25°C − 1.50 1.75 V IF = 8 A, TC = 125°C − 1.6 2.0 IF = 8 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 27 − nC Total Capacitance VR = 1 V, f = 100 kHz − 463 − pF VR = 200 V, f = 100 kHz − 48 − VR = 400 V, f = 100 kHz − 38 − Symbol VF IR QC C Forward Voltage Reverse Current Test Conditions mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PART MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size† Tape Width Quantity FFSD0865A FFSD0865A DPAK3 N/A 13″ N/A 2500 units †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2 FFSD0865A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 IR, REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 8 6 4 TJ = 175 oC 2 TJ = 25 TJ = 125 oC TJ = 75 oC 0 oC TJ = −55oC −6 10 −7 10 TJ = 175 o C TJ = 75 o C −8 10 TJ = 25 o C −9 0.0 0.5 1.0 1.5 10 2.0 200 300 Figure 1. Forward Characteristics PTOT, POWER DISSIPATION (W) IF , PEAK FORWARD CURRENT (A) D = 0.1 D = 0.2 D = 0.3 40 D = 0.5 20 D = 0.7 D = 1 0 25 50 75 100 125 150 120 100 80 60 40 20 0 25 175 o 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) TC, CASE TEMPERATURE ( C) Figure 3. Current Derating Figure 4. Power Derating 40 1000 30 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 600 650 140 100 60 500 Figure 2. Reverse Characteristics 140 80 400 TJ = −55 o C VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 120 TJ = 125 o C 20 10 0 0 100 200 300 400 500 100 10 0.1 600 650 VR, REVERSE VOLTAGE (V) 1 10 100 650 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSD0865A TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY ( m J) 10 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CIRCLE−DESCENDING ORDER D=0.5 0.2 PDM 0.1 0.02 0.01 0.01 0.05 0.1 t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 1.2 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −6 10 −5 −4 10 −3 10 1 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE A DATE 28 SEP 2022 GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AYWWZZ XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code DOCUMENT NUMBER: DESCRIPTION: *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 98AON13810G DPAK3 (TO−252 3 LD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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