FFSD0865B

Silicon Carbide Schottky Diode 650 V, 8 A FFSD0865B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1, 2, 4. Cathode Features • • • • • • • 3. Anode Schottky Diode Max Junction Temperature 175°C Avalanche Rated 33 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DPAK3 (TO−252, 3 LD) CASE 369AS Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V) Continuous Rectified Forward Current TC < 153 Non−Repetitive Peak Forward Surge Current TC = 25°C, tP = 10 ms Symbol Value Unit VRRM 650 V EAS 33 mJ IF 8.0 A TC < 135 11.6 IFM TC = 150°C, tP = 10 ms A 577 $Y &Z &3 &K FFSD0865B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code 538 Non−Repetitive Forward Surge Current (Half−Sine Pulse) TC = 25°C tP = 8.3 ms IFSM 42 A Power Dissipation TC = 25°C Ptot 91 W TC = 150°C Operating Junction and Storage Temperature Range $Y&Z&3&K FFS D0865B ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 15 TJ, Tstg −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2019 October, 2020 − Rev. 2 1 Publication Order Number: FFSD0865B/D FFSD0865B THERMAL RESISTANCE Parameter Symbol Value Unit RqJC 1.64 °C/W Typ Max Unit IF = 8.0 A, TJ = 25°C 1.39 1.7 V IF = 8.0 A, TJ = 125°C 1.55 2.0 IF = 8.0 A, TJ = 175°C 1.71 2.4 VR = 650 V, TJ = 25°C 0.5 40 VR = 650 V, TJ = 125°C 1.0 80 VR = 650 V, TJ = 175°C 2.0 160 Thermal Resistance, Junction−to−Case ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min ON CHARACTERISTICS VF IR Forward Voltage Reverse Current mA CHARGES, CAPACITANCES & GATE RESISTANCE QC Total Capacitive Charge Ctot VC = 400 V 22 nC VR = 1 V, f = 100 kHz 336 pF VR = 200 V, f = 100 kHz 39 VR = 400 V, f = 100 kHz 30 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PART MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method† Reel Size Tape Width Quantity FFSD0865B FFSD0865B DPAK3 Tape & Reel 330 mm 16 mm 2500 units †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FFSD0865B TYPICAL CHARACTERISTICS TJ = −55o C 6 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 8 TJ = 25 o C TJ = 75 o C TJ = 125 o C 4 TJ = 175 o C 2 0 0.0 0.4 0.8 1.2 1.6 10 −6 10 −7 TJ = 175 o C 2.0 10 −8 10 −9 TJ = 125 o C TJ = 75 o C TJ = 25o C TJ = −55 oC 100 200 V F , FORWARD VOLTAGE (V) Figure 1. Forward Characteristics P TOT , POWER DISSIPATION (W) IF , PEAK FORWARD CURRENT (A) D = 0.1 D = 0.2 60 D = 0.3 D = 0.5 30 D = 0.7 25 D=1 50 TC 600 650 75 100 125 150 , CASE TEMPERATURE ( oC) 75 50 25 0 175 25 50 TC Figure 3. Current Derating 75 100 125 150 , CASE TEMPERATURE ( o C) 175 Figure 4. Power Derating 30 1000 20 CAPACITANCE (pF) Q C , CAPACITIVE CHARGE (nC) 500 100 90 10 0 400 Figure 2. Reverse Characteristics 120 0 300 V R, REVERSE VOLTAGE (V) 0 100 200 300 400 500 100 10 600 650 0.1 1 10 100 V R , REVERSE VOLTAGE (V) V R , REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSD0865B TYPICAL CHARACTERISTICS (continued) E C , CAPACITIVE ENERGY ( mJ) 8 6 4 2 0 0 100 200 300 400 500 600 650 V R , REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 0.001 −6 10 D=0.01 SINGLE PULSE 10 −5 10 −4 10 −3 10 −2 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response www.onsemi.com 4 10 −1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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