FFSD1065A

Silicon Carbide Schottky Diode 650 V, 10 A FFSD1065A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1, 2, 4. Cathode 3. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 64 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications 4 1 2 3 DPAK3 (TO−252, 3 LD) CASE 369AS MARKING DIAGRAM • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFS D1065A $Y &Z &3 &K FFSD1065A = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 January, 2020 − Rev. 3 1 Publication Order Number: FFSD1065A/D FFSD1065A MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating FFSD1065A Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 64 mJ Continuous Rectified Forward Current @ TC < 158°C 10 A Continuous Rectified Forward Current @ TC < 135°C 18 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 760 A TC = 150°C, 10 ms 740 A Symbol VRRM EAS IF IF,MAX Parameter IF,SM Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 56 A IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 34 A Ptot Power Dissipation TC = 25°C 150 W TC = 150°C TJ. TSTG Operating and Storage Temperature Range 25 W −55 to + 175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction to Case, Max. RqJC Value Unit 1.0 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit IF = 10 A, TC = 25°C − 1.50 1.75 V IF = 10 A, TC = 125°C − 1.6 2.0 IF = 10 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 OFF CHARACTERISTICS VF IR QC C Forward Voltage Reverse Current mA VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 34 − nC Total Capacitance VR = 1 V, f = 100 kHz − 575 − pF VR = 200 V, f = 100 kHz − 62 − VR = 400 V, f = 100 kHz − 47 − 1. EAS of 64 mJ is based on starting TJ = 25°C; L = 0.5 mH, IAS = 16 A, V = 50 V. ORDERING INFORMATION Device Marking Package Reel Size† Tape Width Quantity FFSD1065A FFSD1065A DPAK3 13″ N/A 2500 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2 FFSD1065A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 8 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 10 6 4 TJ = 175 2 0 oC TJ = 25 oC TJ = 125 oC TJ = 75 oC TJ = −55oC −6 10 TJ = 175 oC −7 10 TJ = 125 oC TJ = 75 oC −8 10 TJ = 25 oC 0.0 0.5 1.0 1.5 10 2.0 200 300 VF, FORWARD VOLTAGE (V) PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) D = 0.1 D = 0.2 D = 0.3 60 D = 0.5 30 600 650 160 120 90 500 Figure 2. Reverse Characteristics 180 150 400 VR, REVERSE VOLTAGE (V) Figure 1. Forward Characteristics D = 0.7 0 25 D=1 50 75 100 125 150 120 80 40 0 25 175 50 75 100 125 150 175 o TC, CASE TEMPERATURE (C) o TC, CASE TEMPERATURE (C) Figure 3. Current Derating Figure 4. Power Derating 50 1000 40 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) TJ = −55 oC −9 30 20 10 0 0 100 200 300 400 100 10 500 600 650 VR, REVERSE VOLTAGE (V) 0.1 1 10 100 650 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSD1065A TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY (m J) 12 10 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D=0.5 PDM 0.1 0.01 0.02 0.01 0.05 0.1 0.2 t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 1.0 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −6 10 −5 −4 10 −3 10 1 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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