FFSH10120ADN-F155

Silicon Carbide Schottky Diode 1200 V, 10 A FFSH10120ADN-F155 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1. Anode 2. Cathode/ Case 3. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 55 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 1 2 3 TO−247−3LD CASE 340CH MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSH 10120ADN $Y &Z &3 &K FFSH10120ADN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 December, 2019 − Rev. 3 1 Publication Order Number: FFSH10120ADN−F155/D FFSH10120ADN−F155 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) (per leg) Parameter Value Unit 1200 V 55 mJ Continuous Rectified Forward Current @ TC < 157°C 5* / 10** A Continuous Rectified Forward Current @ TC < 135°C Symbol VRRM EAS Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (Note 1) IF IF, Max Non-Repetitive Peak Forward Surge Current 8.1* / 16.2** A TC = 25°C, 10 ms 380 A TC = 150°C, 10 ms 330 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 42 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 21 A Ptot Power Dissipation TC = 25°C 83 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range TO−247 Mounting Torque, M3 Screw 14 W −55 to +175 °C 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: * Per leg, ** Per Device 1. EAS of 55 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 15 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC NOTE: Parameter Thermal Resistance, Junction to Case, Max Value Unit 1.8*/ 0.91** °C/W * Per leg, ** Per Device ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (per leg) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 5 A, TC = 25°C − 1.45 1.75 V IF = 5 A, TC = 125°C − 1.7 2.0 IF = 5 A, TC = 175°C − 2.0 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 Total Capacitive Charge V = 800 V − 37 − nC Total Capacitance VR = 1 V, f = 100 kHz − 337 − pF VR = 400 V, f = 100 kHz − 33 − VR = 800 V, f = 100 kHz − 26 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH10120ADN−F155 FFSH10120ADN TO−247−3LD 30 Units / Tube www.onsemi.com 2 FFSH10120ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (per leg) 1 10 IR, REVERSE CURRENT (mA) I F , FORWARD CURRENT (A) 10 8 6 TJ = 75 oC TJ = 125 oC 4 TJ = 175 oC 2 TJ = 25 oC TJ = −55oC 0 0.0 0.5 1.0 1.5 0 10 −1 10 TJ = 75 oC TJ = 25 oC −2 10 TJ = −55oC −3 2.0 2.5 10 3.0 200 400 Figure 1. Forward Characteristics 800 1000 1200 Figure 2. Reverse Characteristics 100 100 D = 0.1 PTOT, POWER DISSIPATION (W) I F , PEAK FORWARD CURRENT (A) 600 VR, REVERSE VOLTAGE (V) VF , FORWARD VOLTAGE (V) 80 60 D = 0.2 40 D = 0.3 D = 0.5 20 D = 0.7 0 25 D=1 50 75 100 125 150 80 60 40 20 0 25 175 TC, CASE TEMPERATURE ( C) 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) o Figure 3. Current Derating Figure 4. Power Derating 1000 50 40 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) TJ = 175 oC TJ = 125 oC 30 20 10 0 0 200 400 600 800 100 10 0.1 1000 1 10 100 1000 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSH10120ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY ( mJ) 15 10 5 0 0 200 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance Stored Energy NORMALIZED THERMAL IMPEDANCE, Z qJC 2 1 DUTY CYCLE−DESCENDING ORDER −1 10 PDM D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 −2 10 −3 10 D=0.5 t1 t2 ZqJC(t) = r(t) x RqJC RqJC = 1.8 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −6 10 −5 10 −4 10 −3 10 −2 10 −1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 1 FFSH10120ADN−F155 TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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