FFSH1065B-F085

Silicon Carbide Schottky Diode 650 V, 10 A FFSH1065B-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1 Cathode Features • • • • • • • • 2 Anode Schottky Diode Max Junction Temperature 175°C Avalanche Rated 51 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant TO−247−2LD CASE 340DA Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters MARKING DIAGRAM $Y&Z&3&K FFSH 1065B $Y &Z &3 &K FFSH1065B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 May, 2020 − Rev. 0 1 Publication Order Number: FFSH1065B−F085/D FFSH1065B−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit 650 V 51 mJ Continuous Rectified Forward Current @ TC < 142°C 10 A Continuous Rectified Forward Current @ TC < 135°C 11.5 Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 600 A TC = 150°C, 10 ms 535 A Symbol VRRM EAS Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy IF IF, Max (Note 1) IF,SM Non-Repetitive Forward Surge Current TC = 25°C Half-Sine Pulse, tp = 8.3 ms 42 A Ptot Power Dissipation TC = 25°C 83 W TC = 150°C 14 W −55 to +175 °C 60 Ncm TJ, TSTG Operating and Storage Temperature Range TO247 Mounting Torque, M3 Screw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 51 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14.5 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 1.81 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 10 A, TC = 25°C − 1.5 1.7 V IF = 10 A, TC = 125°C − 1.7 2.0 IF = 10 A, TC = 175°C − 2 2.4 VR = 650 V, TC = 25°C − 0.5 40 VR = 650 V, TC = 125°C − 1 80 VR = 650 V, TC = 175°C − 2 160 Total Capacitive Charge V = 400 V − 25 − nC Total Capacitance VR = 1 V, f = 100 kHz − 421 − pF VR = 200 V, f = 100 kHz − 40 − VR = 400 V, f = 100 kHz − 34 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH1065B−F085 FFSH1065B TO−247−2LD (Pb−Free / Halogen Free) 30 Units / Tube www.onsemi.com 2 FFSH1065B−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 TJ = −55o C TJ = 175o C TJ = 125oC TJ = 25o C 15 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 20 TJ = 75 oC 10 5 0 −6 10 TJ = 175o C −7 10 −8 10 TJ = 25 oC TJ = −55o C −9 0 1 2 3 V F , FORWARD VOLTAGE (V) 10 4 PTOT , POWER DISSIPATION (W) 90 400 600 650 500 D = 0.2 60 D = 0.3 D = 0.5 30 D = 0.7 D = 1 25 50 75 100 125 150 175 80 60 40 20 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE ( oC) TC, CASE TEMPERATURE ( C) o Figure 3. Current Derating Figure 4. Power Derating 40 1000 30 CAPACITANCE (pF) QC , CAPACITIVE CHARGE (nC) 300 100 D = 0.1 20 10 0 200 Figure 2. Reverse Characteristics 120 0 100 V R , REVERSE VOLTAGE (V) Figure 1. Forward Characteristics I F, PEAK FORWARD CURRENT (A) TJ = 125oC TJ = 75oC 0 100 200 300 400 100 10 500 600 650 VR, REVERSE VOLTAGE (V) 0.1 1 10 100 650 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSH1065B−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC , CAPACITIVE ENERGY ( mJ) 10 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D=0.5 0.1 PDM D=0.2 D=0.1 D=0.05 D=0.02 0.01 t1 D=0.01 SINGLE PULSE 0.001 −6 10 −5 −4 10 t2 NOTES: ZqJC (t) = r(t) x RqJC RqJC = 1.81o C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1 / t 2 −3 10 −2 10 10 −1 1 t2 t 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340DA ISSUE A DATE 27 FEB 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb− Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON00714H TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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