FFSH15120A

Silicon Carbide Schottky Diode 1200 V, 15 A FFSH15120A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. 1. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 145 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 1 2 TO−247−2LD CASE 340CL MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSH 15120A $Y &Z &3 &K FFSH15120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 January, 2020 − Rev. 2 1 Publication Order Number: FFSH15120A/D FFSH15120A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 1200 V Single Pulse Avalanche Energy (Note 1) 145 mJ Continuous Rectified Forward Current @ TC < 159°C 15 A Continuous Rectified Forward Current @ TC < 135°C 26 A Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 920 A TC = 150°C, 10 ms 870 A Symbol VRRM EAS IF IF,Max IF,SM Non-Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 115 A IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 50 A PTOT Power Dissipation TC = 25°C 283 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 47 W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 145 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 24 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.53 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 15 A, TC = 25°C − 1.45 1.75 V IF = 15 A, TC = 125°C − 1.7 2.0 IF = 15 A, TC = 175°C − 2.0 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 Total Capacitive Charge V = 800 V − 95 − nC Total Capacitance VR = 1 V, f = 100 kHz − 936 − pF VR = 400 V, f = 100 kHz − 86 − VR = 800 V, f = 100 kHz − 68 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSH15120A FFSH15120A TO−247−2LD Tube 30 Units www.onsemi.com 2 FFSH15120A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 101 20 IR, Reverse Current (mA) IF, Forward Current (A) TJ = −55°C TJ = 25°C 15 TJ = 75°C 10 TJ = 125°C TJ = 175°C 5 0 0 1 2 VF, Forward Voltage (V) TJ = 175°C 100 TJ = 125°C 10−1 TJ = 75°C 10−2 TJ = 25°C 3 Figure 1. Forward Characteristics 0.8 0.6 IF, Peak Forward Current (A) IR, Reverse Current (mA) 1200 250 TJ = −55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 0.4 0.2 0.0 1200 1300 1400 D = 0.1 200 150 D = 0.2 D = 0.3 100 D = 0.5 50 0 1500 D = 0.7 25 D=1 50 75 100 125 150 175 TC, Case Temperature (5C) VR, Reverse Voltage (V) Figure 3. Reverse Characteristics Figure 4. Current Derating 300 120 QC, Capacitive Charge (nC) PTOT, Power Dissipation (W) 400 600 800 1000 VR, Reverse Voltage (V) Figure 2. Reverse Characteristics 1.0 250 200 150 100 50 0 TJ = −55°C 10−3 200 25 50 75 100 125 150 100 80 60 40 20 0 175 0 200 400 600 800 1000 VR, Reverse Voltage (V) TC, Case Temperature (5C) Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage www.onsemi.com 3 FFSH15120A TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) 40 EC, Capacitive Energy (mJ) Capacitance (pF) 5000 1000 100 10 0.1 1 10 100 30 20 10 0 1000 0 200 VR, Reverse Voltage (V) ZqJC, Normalized Thermal Impedance 600 800 1000 VR, Reverse Voltage (V) Figure 7. Capacitance vs. Reverse Voltage 2 1 400 Figure 8. Capacitance Stored Energy DUTY CIRCLE−DESCENDING ORDER 10−1 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 10−2 10−3 PDM D=0.5 t1 t2 NOTES: ZqJC(t) = r(t) × RqJC RqJC = 0.53°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10−4 10−6 10−5 10−4 10−3 10−2 10−1 1 t, Rectangular Pulse Duration (s) Figure 9. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 10. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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