FFSH1665A

Silicon Carbide Schottky Diode 650 V, 16 A FFSH1665A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com VRRM IF 650 V 16 A Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 81 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery This Device is Pb−Free and is RoHS Compliant 1. Cathode 2. Anode 1 2 Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits TO−247−2LD CASE 340CL MARKING DIAGRAM $Y&Z&3&K FFSH 1665A $Y &Z &3 &K FFSH1665A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 February, 2020 − Rev. 1 1 Publication Order Number: FFSH1665A/D FFSH1665A ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol VRRM EAS IF FFSH1665A Unit Peak Repetitive Reverse Voltage Parameter 650 V Single Pulse Avalanche Energy (Note 1) 81 mJ @ TC < 152°C 16 A @ TC < 135°C 23 Continuous Rectified Forward Current IF, Max Non−Repetitive Peak Forward Surge Current IF, SM Non−Repetitive Forward Surge Current IF, RM Ptot TJ, TSTG TC = 25°C, 10 μs 1000 A TC = 150°C, 10 μs 900 A Half−Sine Pulse, tp = 8.3 ms 90 A Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 50 A Power Dissipation TC = 25°C 161 W TC = 150°C 27 W −55 to +150 °C Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 81 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 18 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction to Case, Max. RqJC Rating Unit 0.93 _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FFSH1665A FFSH1665A TO247−2L Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Forward Voltage Reverse Current Min Typ Max Unit IF = 16 A, TC = 25°C Test Conditions − 1.50 1.75 V IF = 16 A, TC = 125°C − 1.6 2.0 IF = 16 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 μA VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 52 − nC Total Capacitance VR = 1 V, f = 100 kHz − 887 − pF VR = 200 V, f = 100 kHz − 95 − VR = 400 V, f = 100 kHz − 72 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FFSH1665A TYPICAL CHARACTERISTICS 16 10−5 12 10−6 IR, Reverse Current (A) IF, Forward Current (A) (TJ = 25°C unless otherwise noted) 8 TJ = 175°C TJ = 125°C 4 TJ = 75°C TJ = 25°C 0.0 0.5 TJ = 175°C 10−7 TJ = 75°C 1.0 TJ = 125°C 10−8 TJ = −55°C TJ = 55°C 0 TJ = 25°C 1.5 10−9 200 2.0 300 VF, Forward Voltage (V) 150 D = 0.1 150 PTOT, Power Dissipation (W) IF, Peak Forward Current (A) 180 D = 0.2 D = 0.3 D = 0.5 60 30 D = 0.7 D = 1 90 60 30 0 50 75 100 125 150 175 25 TC, Case Temperature (5C) 50 75 100 125 150 175 TC, Case Temperature (5C) Figure 4. Power Derating Figure 3. Current Derating 10000 80 60 Capacitance (pF) QC, Capacitance Charge (nC) 650 120 0 25 600 Figure 2. Reverse Characteristics 180 90 500 VR, Reverse Voltage (V) Figure 1. Forward Characteristics 120 400 40 20 0 0 200 400 1000 100 10 600 650 0.1 VR, Reverse Voltage (V) 1 10 100 650 VR, Reverse Voltage (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSH1665A TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) EC, Capacitive Energy (mJ) 18 12 6 0 0 200 400 600 650 VR, Reverse Voltage (V) Figure 7. Capacitance Stored Energy r(t), Normalized Effective Transient Thermal Resistance 2 1 DUTY CYCLE−DESCENDING ORDER 0.5 PDM 0.1 0.01 0.01 0.001 10−6 0.02 0.05 t1 0.2 0.1 t2 Notes: ZqJC(t) = r(t) × RqJC RqJC = 0.93°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10−5 10−4 10−3 10−2 t, Rectangular Pulse Duration (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 4 10−1 1 FFSH1665A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE VAVL R + VDD IL VDD DUT IL I V − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative