Silicon Carbide Schottky
Diode
1200 V, 20 A
FFSH20120A-F085
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
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1. Cathode
2. Anode
Schottky Diode
Features
•
•
•
•
•
•
•
•
Max Junction Temperature 175°C
Avalanche Rated 210 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
TO−247−2LD
CASE 340CL
MARKING DIAGRAM
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
$Y&Z&3&K
FFSH
20120A
$Y
&Z
&3
&K
FFSH20120A
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
February, 2020 − Rev. 2
1
Publication Order Number:
FFSH20120A−F085/D
FFSH20120A−F085
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Value
Unit
Peak Repetitive Reverse Voltage
1200
V
Single Pulse Avalanche Energy (Note 1)
210
mJ
Continuous Rectified Forward Current @ TC < 158°C
20
A
Symbol
VRRM
EAS
IF
Continuous Rectified Forward Current @ TC < 135°C
IF, Max
Non-Repetitive Peak Forward Surge Current
30
TC = 25°C, 10 ms
1190
A
TC = 150°C, 10 ms
990
A
IF,SM
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
135
A
IF,RM
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
74
A
Ptot
Power Dissipation
TC = 25°C
273
W
TC = 150°C
TJ, TSTG
Operating and Storage Temperature Range
46
W
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 210 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 29 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Thermal Resistance, Junction to Case, Max
Value
Unit
0.55
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
VF
IR
QC
C
Parameter
Min
Typ
Max
Unit
IF = 20 A, TC = 25°C
−
1.45
1.75
V
IF = 20 A, TC = 125°C
−
1.7
2.0
IF = 20 A, TC = 175°C
−
2.0
2.4
VR = 1200 V, TC = 25°C
−
−
200
VR = 1200 V, TC = 125°C
−
−
300
VR = 1200 V, TC = 175°C
−
−
400
Total Capacitive Charge
V = 800 V
−
120
−
nC
Total Capacitance
VR = 1 V, f = 100 kHz
−
1220
−
pF
VR = 400 V, f = 100 kHz
−
111
−
VR = 800 V, f = 100 kHz
−
88
−
Forward Voltage
Reverse Current
Test Condition
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FFSH20120A−F085
FFSH20120A
TO−247−2LD
(Pb-Free / Halogen Free)
30 Units / Tube
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2
FFSH20120A−F085
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
16
10
TJ = −55oC
TJ = 25 oC
IR, REVERSE CURRENT ( m A)
IF, FORWARD CURRENT (A)
20
TJ = 75 oC
TJ = 125 oC
12
TJ = 175 oC
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
1
TJ = 175 oC
−1
10
TJ = 125 oC
TJ = 75 oC
−2
10
TJ = 25 oC
3.0
200
400
VF , FORWARD CURRENT (V)
800
1000
1200
Figure 2. Reverse Characteristics
250
IF, PEAK FORWARD CURRENT (A)
1.0
IR, REVERSE CURRENT (mA)
600
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics
TJ = −55 oC
0.8
TJ = 25 oC
TJ = 75 oC
0.6
0.4
T J = 125 oC
0.2
TJ = 175 oC
0.0
1000
1100
1200
1300
1400
D = 0.1
200
150 D = 0.2
D = 0.3
100 D = 0.5
50
D = 0.7
0
25
1500
250
125
QC, CAPACITIVE CHARGE (nC)
150
200
150
100
50
100
125
150
100
125
150
175
100
75
50
25
0
75
75
Figure 4. Current Derating
300
50
50
TC, CASE TEMPERATURE (C)
Figure 3. Reverse Characteristics
0
25
D=1
o
VR, REVERSE VOLTAGE (V)
PTOT, POWER DISSIPATION (W)
TJ = −55 oC
−3
10
175
0
200
400
600
800
1000
VR, REVERSE VOLTAGE (V)
o
TC, CASE TEMPERATURE (C)
Figure 5. Power Derating
Figure 6. Capacitive Charge vs. Reverse
Voltage
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3
FFSH20120A−F085
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
EC, CAPACITIVE ENERGY (mJ)
50
1000
100
50
0.1
1
10
100
40
30
20
10
0
1000
0
200
400
600
800
1000
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance vs. Reverse Voltage
Figure 8. Capacitance Stored Energy
2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
CAPACITANCE (pF)
5000
1
DUTY CYCLE−DESCENDING ORDER
0.5
0.2
PDM
0.1
0.01
0.001
−6
10
0.05
0.02
0.1
t1
t2
NOTES:
0.01
ZqJC(t) = r(t) x R qJC
RqJC = 0.55 oC/W
Peak TJ = PDM x ZqJC(t) + T C
Duty Cycle, D = t 1 / t2
SINGLE PULSE
−5
10
−4
−3
10
10
−2
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 9. Junction-to-Case Transient Thermal Response Curve
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4
−1
10
1
FFSH20120A−F085
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
Q1
CURRENT
SENSE
DUT
VAVL
R
+
VDD
IL
IL
I V
VDD
−
t0
t1
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
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5
t2
t
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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