FFSH2065A

Silicon Carbide Schottky Diode 650 V, 20 A FFSH2065A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com VRRM IF 650 V 20 A Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 95 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery This Device is Pb−Free and is RoHS Compliant 1. Cathode 2. Anode 1 Applications 2 • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits TO−247−2LD CASE 340CL MARKING DIAGRAM $Y&Z&3&K FFSH 2065A $Y &Z &3 &K FFSH2065A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 February, 2020 − Rev. 1 1 Publication Order Number: FFSH2065A/D FFSH2065A ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol VRRM EAS IF FFSH2065A Unit Peak Repetitive Reverse Voltage Parameter 650 V Single Pulse Avalanche Energy (Note 1) 95 mJ @ TC < 146°C 20 A @ TC < 135°C 25 Continuous Rectified Forward Current IF, Max Non−Repetitive Peak Forward Surge Current IF, SM Non−Repetitive Forward Surge Current IF, RM Ptot TJ, TSTG TC = 25°C, 10 μs 1100 A TC = 150°C, 10 μs 1000 A Half−Sine Pulse, tp = 8.3 ms 105 A Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 58 A Power Dissipation TC = 25°C 183 W TC = 150°C 31 W −55 to +175 °C 60 Ncm Operating and Storage Temperature Range TO247 Mounting Torque, M3 Screw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 95 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.5 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction to Case, Max. RqJC Rating Unit 0.82 _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FFSH2065A FFSH2065A TO247−2L Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 20 A, TC = 25°C − 1.50 1.75 V IF = 20 A, TC = 125°C − 1.6 2.0 IF = 20 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 64 − nC Total Capacitance VR = 1 V, f = 100 kHz − 1085 − pF VR = 200 V, f = 100 kHz − 117 − VR = 400 V, f = 100 kHz − 88 − Forward Voltage Reverse Current Test Conditions μA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FFSH2065A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10−5 16 12 8 TJ = 175°C 4 TJ = 125°C TJ = 25°C TJ = −55°C TJ = 75°C 10−6 IR, Reverse Current (A) IF, Forward Current (A) 20 TJ = 25°C 10−7 TJ = 175°C TJ = 125°C 10−8 TJ = 75°C 0.0 0.5 1.0 1.5 2.0 200 2.5 300 VF, Forward Voltage (V) 500 600 650 Figure 2. Reverse Characteristics 240 200 D = 0.1 200 160 PTOT, Power Dissipation (W) IF, Peak Forward Current (A) 400 VR, Reverse Voltage (V) Figure 1. Forward Characteristics D = 0.2 120 D = 0.3 80 D = 0.5 40 D = 0.7 D = 1 160 120 80 40 0 0 25 50 75 100 125 150 25 175 TC, Case Temperature (5C) 50 75 100 125 150 175 TC, Case Temperature (5C) Figure 4. Power Derating Figure 3. Current Derating 100 10000 80 Capacitance (pF) QC, Capacitance Charge (nC) TJ = −55°C 10−9 0 60 40 1000 100 20 0 10 0 100 200 300 400 500 0.1 600 650 VR, Reverse Voltage (V) 1 10 100 650 VR, Reverse Voltage (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSH2065A TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) EC, Capacitive Energy (mJ) 25 20 15 10 5 0 0 100 200 300 400 500 600 650 VR, Reverse Voltage (V) Figure 7. Capacitance Stored Energy r(t), Normalized Effective Transient Thermal Resistance 2 1 DUTY CYCLE−DESCENDING ORDER PDM 0.1 0.5 0.01 0.02 0.05 0.1 t1 0.2 t2 Notes: ZqJC(t) = r(t) × RqJC RqJC = 0.82°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.01 0.001 10−6 SINGLE PULSE 10−5 10−4 10−3 10−2 t, Rectangular Pulse Duration (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 4 10−1 1 FFSH2065A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE VAVL R + VDD IL VDD DUT IL I V − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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