FFSH2065B-F085

FFSH2065B-F085 Silicon Carbide Schottky Diode 650 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1. Cathode Features • • • • • • • • Schottky Diode Max Junction Temperature 175°C Avalanche Rated 94 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications 2. Anode TO−247−2LD CASE 340DA MARKING DIAGRAM • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol VRRM EAS Parameter Unit Ratings Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 94 mJ A Continuous Rectified Forward Current @ TC < 141°C 20 @ TC < 135°C 22.3 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 889 TC = 150°C, 10 ms 861 IF, SM Non−Repetitive Forward Surge Current TC = 25°C Half−Sine Pulse, tp = 8.3 ms 84 A Ptot Power Dissipation TC = 25°C 148 W TC = 150°C 25 IF IF, Max TJ,TSTG Operating and Storage Temperature Range TO247 Mounting Torque, M3 Screw $Y&Z&3&K FFSH 2065B A $Y &Z &3 &K FFSH2065B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION −55 to +175 °C 60 Ncm See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 94 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.4 A, V = 50 V. © Semiconductor Components Industries, LLC, 2013 August, 2019 − Rev. 0 1 Publication Order Number: FFSH2065B−F085/D FFSH2065B−F085 THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Ratings Unit 1.01 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Min Typ Max Unit IF = 20 A, TC = 25°C − 1.38 1.7 V IF = 20 A, TC = 125°C − 1.6 2.0 IF = 20 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − 0.5 40 VR = 650 V, TC = 125°C − 1 80 VR = 650 V, TC = 175°C − 2 160 Total Capacitive Charge V = 400 V − 51 − nC Total Capacitance VR = 1 V, f = 100 kHz − 866 − pF VR = 300 V, f = 100 kHz − 80 − VR = 600 V, f = 100 kHz − 70 − Symbol VF Forward Voltage IR Reverse Current QC C Test Conditions mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping FFSH2065B−F085 FFSH2065B TO−247−2LD (Pb−Free/Halogen Free) 30 Units/Tube www.onsemi.com 2 FFSH2065B−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10−5 TJ = −55°C TJ = 25°C IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 40 TJ = 175°C 30 TJ = 75°C TJ = 125°C 20 10 0 0.0 0.5 1.0 1.5 2.0 VF, FORWARD VOLTAGE (V) 2.5 10−6 TJ = 175°C 10−7 10−8 Figure 1. Forward Characteristics PTOT, POWER DISSIPATION (W) IP, PEAK FORWARD CURRENT (A) 150 D = 0.2 300 400 500 VR, REVERSE VOLTAGE (V) 600 650 D = 0.3 D = 0.5 50 D = 0.7 50 D=1 75 100 125 150 TC, CASE TEMPERATURE (5C) 120 60 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Derating 5000 90 1000 CAPACITIANCE (pF) QC, CAPACITIVE CHARGE (nC) 200 180 D = 0.1 0 25 TJ = −55°C Figure 2. Reverse Characteristics 200 100 TJ = 75°C TJ = 25°C 10−9 100 3.0 TJ = 125°C 60 30 0 0 100 200 300 400 500 600 650 100 50 0.1 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage 1 10 100 VR, REVERSE VOLTAGE (V) Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSH2065B−F085 TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) EC, CAPACITIVE ENERGY (mJ) 20 15 10 5 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE − DESCENDING ORDER D = 0.5 PDM 0.1 D = 0.2 D = 0.1 t1 t2 D = 0.05 NOTES: ZqJC (t) = r(t) × RqJC RqJC = 1.01°C/W Peak TJ = PDM × ZqJC (t) + TC Duty cycle, D = t1/t2 D = 0.02 0.01 D = 0.01 SINGLE PULSE 0.001 10−6 10−5 10−4 10−3 10−2 10−1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340DA ISSUE A DATE 27 FEB 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb− Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON00714H TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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