FFSH30120ADN-F155

Silicon Carbide Schottky Diode 1200 V, 30 A FFSH30120ADN-F155 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1. Anode 2. Cathode/ Case 3. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 145 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 1 2 3 TO−247−3LD CASE 340CH MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSH 30120ADN $Y &Z &3 &K FFSH30120ADN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 January, 2020 − Rev. 3 1 Publication Order Number: FFSH30120ADN−F155/D FFSH30120ADN−F155 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) (per leg) Parameter Value Unit Peak Repetitive Reverse Voltage 1200 V Single Pulse Avalanche Energy (Note 1) 145 mJ 15* / 30** A TC = 25°C, 10 ms 1030 A TC = 150°C, 10 ms 990 A Symbol VRRM EAS IF Continuous Rectified Forward Current @ TC < 148°C IF,Max Non-Repetitive Peak Forward Surge Current IF,SM Non-Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 125 A IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 50 A PTOT Power Dissipation TC = 25°C 195 W TC = 150°C 32 W TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C 60 Ncm TO−247 Mounting Torque, M3 Screw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: * Per leg, ** Per Device. 1. EAS of 145 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 24 A, V = 150 V. THERMAL CHARACTERISTICS Symbol RqJC NOTE: Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.77* / 0.32** °C/W * Per leg, ** Per Device. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (per leg) Parameter Min Typ Max Unit IF = 15 A, TC = 25°C − 1.45 1.75 V IF = 15 A, TC = 125°C − 1.7 2.0 IF = 15 A, TC = 175°C − 2.0 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 Total Capacitive Charge V = 800 V − 95 − nC Total Capacitance VR = 1 V, f = 100 kHz − 936 − pF VR = 400 V, f = 100 kHz − 86 − VR = 800 V, f = 100 kHz − 68 − Symbol VF IR QC C Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSH30120ADN−F155 FFSH30120ADN TO−247−3LD Tube 30 Units www.onsemi.com 2 FFSH30120ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted (per leg)) 101 30 TJ = 25°C IR, Reverse Current (mA) IF, Forward Current (A) TJ = −55°C TJ = 75°C 20 TJ = 125°C TJ = 175°C 10 0 0 1 2 3 VF, Forward Voltage (V) TJ = 175°C 100 TJ = 125°C 10−1 10−2 TJ = 75°C 4 Figure 1. Forward Characteristics 200 IF, Peak Forward Current (A) IR, Reverse Current (mA) TJ = −55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 0.6 0.4 0.2 0.0 1000 1100 1200 1300 1400 1200 150 D = 0.2 100 D = 0.3 D = 0.5 50 D = 0.7 0 1500 25 D=1 50 75 100 125 150 175 TC, Case Temperature (5C) Figure 3. Reverse Characteristics Figure 4. Current Derating 200 120 QC, Capacitive Charge (nC) PTOT, Power Dissipation (W) 400 600 800 1000 VR, Reverse Voltage (V) D = 0.1 VR, Reverse Voltage (V) 150 100 50 0 TJ = −55°C Figure 2. Reverse Characteristics 1.0 0.8 TJ = 25°C 10−3 200 25 50 75 100 125 150 100 80 60 40 20 0 175 0 200 400 600 800 1000 VR, Reverse Voltage (V) TC, Case Temperature (5C) Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage www.onsemi.com 3 FFSH30120ADN−F155 TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted (per leg)) 40 EC, Capacitive Energy (mJ) Capacitance (pF) 5000 1000 100 10 0.1 1 10 100 30 20 10 0 1000 0 200 VR, Reverse Voltage (V) 400 600 800 1000 VR, Reverse Voltage (V) Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy ZqJC, Normalized Thermal Impedance 2 1 0.5 PDM 0.2 t1 0.1 t2 0.05 0.02 0.01 0.1 NOTES: ZqJC(t) = r(t) × RqJC RqJC = 0.77°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.05 10−4 10−3 10−2 10−1 1 t, Rectangular Pulse Duration (s) Figure 9. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 10. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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