FFSH3065ADN-F155

Silicon Carbide Schottky Diode 650 V, 30 A FFSH3065ADN-F155 Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 1 Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 81 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 2 3 TO−247 LONG LEAD CASE 340CH 1 2 3 Anode Cathode/Case Anode Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits MARKING DIAGRAM $Y&Z&3&K FFSH 3065ADN $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH3065ADN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 April, 2021 − Rev. 4 1 Publication Order Number: FFSH3065ADN−F155/D FFSH3065ADN−F155 Table 1. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 81 mJ Continuous Rectified Forward Current @ TC < 148°C (Note 2) 16*/30** A Continuous Rectified Forward Current @ TC < 135°C 23*/36** Symbol VRRM EAS IF IF,Max Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 1000 A TC = 150°C, 10 ms 900 A IF,SM Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 90 A IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 50 A Ptot Power Dissipation TC = 25°C 165 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 28 W −55 to +175 °C 60 Ncm TO247 Mounting Torque, M3 Screw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 81 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 18 A, V = 50 V. 2. Limited by per device. Table 2. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction−to−Case, Max. Rating Unit 0.91*/0.4** °C/W * Per Leg ** Per Device Table 3. OPERATING CHARACTERISTICS (TC = 25°C, unless otherwise noted) Parameter Symbol VF IR QC C Forward Voltage Reverse Current Min Typ Max Unit IF = 16 A, TC = 25°C Test Conditions − 1.5 1.75 V IF = 16 A, TC = 125°C − 1.6 2.0 IF = 16 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 mA VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 52 − nC Total Capacitance VR = 1 V, f = 100 kHz − 887 − pF VR = 200 V, f = 100 kHz − 95 − VR = 400 V, f = 100 kHz − 72 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PART MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSH3065ADN−F155 FFSH3065ADN TO−247 Long Lead Tube N/A N/A 30 units www.onsemi.com 2 FFSH3065ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 25 TJ = 25 oC 20 TJ = 75 oC IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 30 TJ = 175 oC TJ = 125 oC 15 10 TJ = 5 0 −55oC TJ = 25 oC TJ = 175 oC −7 10 TJ = 75 oC TJ = 125 oC −8 10 TJ = −55oC −9 0.0 0.5 1.0 1.5 2.0 10 2.5 200 300 400 500 600 650 VF, FORWARD VOLTAGE (V) V R , REVERSE VOLTAGE (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 200 200 D = 0.1 PTOT, POWER DISSIPATION (W) IF , PEAK FORWARD CURRENT (A) −6 10 160 120 D = 0.2 D = 0.3 80 D = 0.5 40 D = 0.7 0 25 D=1 50 75 100 125 150 160 120 80 40 0 25 175 o 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) TC, CASE TEMPERATURE ( C) Figure 3. Current Derating Figure 4. Power Derating www.onsemi.com 3 175 FFSH3065ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10000 60 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 80 40 20 0 0 200 400 1000 100 10 600 650 0.1 1 10 100 650 VR, REVERSE VOLTAGE (V) VR , REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 12 6 0 0 200 400 600 650 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance Stored Energy r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE EC, CAPACITIVE ENERGY ( m J) 18 2 1 DUTY CYCLE−DESCENDING ORDER 0.5 PDM 0.1 0.01 0.02 0.01 SINGLE PULSE 0.001 −6 10 −5 10 0.05 t1 0.2 0.1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 0.91 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 −4 −3 10 10 −2 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 4 −1 10 1 FFSH3065ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) L = 0.5mH Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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