FFSH40120ADN-F085

FFSH40120ADN-F085 Silicon Carbide Schottky Diode 1200 V, 40 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1. Anode 2. Cathode/ Case 3. Anode Schottky Diode Features • • • • • • • • Max Junction Temperature 175°C Avalanche Rated 210 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 3 TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FFSH 40120ADN Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters $Y &Z &3 &K FFSH40120ADN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 August, 2019 − Rev. 2 1 Publication Order Number: FFSH40120ADN−F085/D FFSH40120ADN−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 1200 V Single Pulse Avalanche Energy (Note 1) 210 mJ Continuous Rectified Forward Current @ TC < 148°C 20* / 40** A Continuous Rectified Forward Current @ TC < 135°C 25* / 50** Symbol VRRM EAS IF IF, Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 1190 A TC = 150°C, 10 ms 990 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 135 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 74 A Ptot Power Dissipation TC = 25°C 220 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range TO247 Mounting Torque, M3 Screw 37 W −55 to +175 °C 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 210 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 29 A, V = 50 V. *Per leg, ** Per Device THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.68* / 0.34** °C/W *Per leg, ** Per Device ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 20 A, TC = 25°C − 1.45 1.75 V IF = 20 A, TC = 125°C − 1.7 2.0 IF = 20 A, TC = 175°C − 2.0 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 Total Capacitive Charge V = 800 V − 120 − nC Total Capacitance VR = 1 V, f = 100 kHz − 1220 − pF VR = 400 V, f = 100 kHz − 111 − VR = 800 V, f = 100 kHz − 88 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH40120ADN−F085 FFSH40120ADN TO−247−3LD (Pb-Free / Halogen Free) 30 Units / Tube www.onsemi.com 2 FFSH40120ADN−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; per leg) 40 10 TJ = −55 C IR, REVERSE CURRENT ( m A) IF, FORWARD CURRENT (A) o TJ = 25 oC 30 TJ = 75 oC 20 TJ = 125 oC TJ = 175 oC 10 1 TJ = 175 oC −1 10 TJ = 125 oC TJ = 75 oC −2 10 TJ = 25 oC TJ = −55 oC −3 0 10 0 1 2 3 4 200 400 VF, FORWARD VOLTAGE (V) Figure 1. Forward Characteristics 180 0.8 IF, PEAK FORWARD CURRENT (A) IR, REVERSE CURRENT (mA) 1000 1200 200 TJ = −55oC TJ = 25 oC TJ = 75 oC 0.6 0.4 TJ = 125 C o 0.2 TJ = 175 oC 0.0 1000 1100 1200 1300 1400 D = 0.1 160 140 D = 0.2 120 100 D = 0.3 80 D = 0.5 D = 0.7 60 D = 1 40 20 0 25 1500 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) VR, REVERSE VOLTAGE (V) Figure 3. Reverse Characteristics Figure 4. Current Derating 150 QC, CAPACITIVE CHARGE (nC) 250 PTOT, POWER DISSIPATION (W) 800 Figure 2. Reverse Characteristics 1.0 200 150 100 50 0 25 600 VR, REVERSE VOLTAGE (V) 125 100 75 50 25 0 50 75 100 125 150 175 0 200 400 600 800 1000 TC, CASE TEMPERATURE (C) VR, REVERSE VOLTAGE (V) Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage o www.onsemi.com 3 FFSH40120ADN−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; per leg; continued) EC, CAPACITIVE ENERGY (mJ) 50 1000 100 50 0.1 1 10 100 40 30 20 10 0 1000 0 200 VR, REVERSE VOLTAGE (V) 2 1 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance vs. Reverse Voltage r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE CAPACITANCE (pF) 5000 Figure 8. Capacitance Stored Energy DUTY CYCLE−DESCENDING ORDER D=0.5 D=0.2 PDM 0.1 D=0.1 t1 D=0.05 D=0.02 0.01 0.001 −6 10 t2 NOTES: ZqJC(t) = r(t) x R qJC RqJC = 0.68 oC/W Peak TJ = PDM x ZqJC(t) + T C Duty Cycle, D = t 1 / t2 D=0.01 SINGLE PULSE −5 10 −4 −3 −2 10 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 9. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 10 −1 1 FFSH40120ADN−F085 TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 10. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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