FFSH4065ADN-F155

FFSH4065ADN-F155 Silicon Carbide Schottky Diode 650 V, 40 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com VRRM IF 650 V 40 A Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 95 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery This Device is Pb−Free and is RoHS Compliant 1 Applications 2 3 TO−247−3LD CASE 340CH • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits MARKING DIAGRAM $Y&Z&3&K FFSH 4065ADN $Y &Z &3 &K FFSH4065ADN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 March, 2018 − Rev. 1 1 Publication Order Number: FFSH4065ADN−F155/D FFSH4065ADN−F155 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol VRRM EAS IF FFSH4065ADN−F155 Unit Peak Repetitive Reverse Voltage Parameter 650 V Single Pulse Avalanche Energy (Note 1) 95 mJ A Continuous Rectified Forward Current @TC < 140°C 20* / 40** Continuous Rectified Forward Current @ TC < 135°C 22* / 44** IF, Max Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 μs 1100 A TC = 150°C, 10 μs 1000 A IF, SM Non−Repetitive Forward Surge Current 105 A IF, RM Repetitive Forward Surge Current 58 A TC = 25°C 150 W TC = 150°C 25 W −55 to +175 °C 60 Ncm Ptot Power Dissipation TJ, TSTG Operating and Storage Temperature Range TO247 Mounting Torque, M3 Screw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Per leg. **Per Device. 1. EAS of 95 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.5 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction to Case, Max. RqJC Rating Unit 1.0* / 0.5** _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FFSH4065ADN−F155 FFSH4065ADN TO-247 Long Lead Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 20 A, TC = 25°C − 1.5 1.75 V IF = 20 A, TC = 125°C − 1.6 2.0 IF = 20 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitance Charge V = 400 V − 64 − nC Total Capacitance VR = 1 V, f = 100 kHz − 1085 − pF VR = 200 V, f = 100 kHz − 117 − VR = 400 V, f = 100 kHz − 88 − Forward Voltage Reverse Current Test Conditions mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FFSH4065ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10 −5 10 −6 TJ = 125 oC 30 IR, Reverse Current (A) IF, Forward Current (A) 40 TJ = 75 oC TJ = 25 oC TJ = 175 o C 20 10 TJ = 25 o C 10 −7 10 −8 TJ = 175 o C TJ = 125 o C TJ = 75 o C TJ = −55o C 0 0.0 0.5 1.0 1.5 2.0 2.5 10 3.0 200 300 VF, Forward Voltage (V) PTOT, Power Dissipation (W) IF, Peak Forward Current (A) D = 0.2 D = 0.3 80 D = 0.5 0 25 D = 0.7 650 D=1 50 75 100 125 150 120 80 40 0 0.0 25 175 ID, Drain Current [A] TC, Case Temperature (5C) 50 75 100 125 150 175 TC, Case Temperature (5C) Figure 4. Power Derating Figure 3. Current Derating 10000 100 80 Capacitance (pF) QC, Capacitance Charge (nC) 600 160 D = 0.1 40 500 Figure 2. Reverse Characteristics 160 120 400 VR, Reverse Voltage (V) Figure 1. Forward Characteristics 200 TJ = −55 o C −9 60 40 1000 100 20 10 0 0 100 200 300 400 500 0.1 600 650 VR, Reverse Voltage (V) 1 10 100 650 VR, Reverse Voltage (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSH4065ADN−F155 TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) EC, Capacitive Energy (mJ) 25 20 15 10 5 0 0 100 200 300 400 500 600 650 VR, Reverse Voltage (V) Figure 7. Capacitance Stored Energy r(t), Normalized Effective Transient Thermal Resistance 2 1 DUTY CYCLE−DESCENDING ORDER PDM 0.1 0.01 0.05 0.1 0.2 0.5 t1 Notes: ZqJC(t) = r(t) × RqJC RqJC = 1.0°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.001 10−6 10−5 10−4 10−3 10−2 10−1 t, Rectangular Pulse Duration (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 4 t2 1 FFSH4065ADN−F155 TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE VAVL R + VDD IL VDD DUT IL I V − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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