FFSH4065BDN-F085

FFSH4065BDN-F085 Silicon Carbide Schottky Diode 650 V, 40 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1 Anode Features • • • • • • • • 2 Cathode/ Case 3 Anode Schottky Diode Max Junction Temperature 175°C Avalanche Rated 94 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant TO−247−3LD CASE 340CX Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters MARKING DIAGRAM $Y&Z&3&K FFSH 4065BDN $Y &Z &3 &K FFSH4065BDN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 August, 2019 − Rev. 1 1 Publication Order Number: FFSH4065BDN−F085/D FFSH4065BDN−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol VRRM EAS Value Unit 650 V 94* mJ 20*/40** A TC = 25°C, 10 ms 889 A TC = 150°C, 10 ms 861 A Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy IF (Note 1) Continuous Rectified Forward Current @ TC < 136°C IF, Max Non-Repetitive Peak Forward Surge Current IF,SM Non-Repetitive Forward Surge Current TC = 25°C Half-Sine Pulse, tp = 8.3 ms 84 A Ptot Power Dissipation TC = 25°C 127 W TC = 150°C 21 W −55 to +175 °C 60 Ncm TJ, TSTG Operating and Storage Temperature Range TO247 Mounting Torque, M3 Screw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. * Per Leg, ** Per Device 1. EAS of 94 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.4 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 1.17*/0.58** °C/W * Per Leg, ** Per Device ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted (per leg)) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 20 A, TC = 25°C − 1.38 1.7 V IF = 20 A, TC = 125°C − 1.6 2.0 IF = 20 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − 0.5 40 VR = 650 V, TC = 125°C − 1 80 VR = 650 V, TC = 175°C − 2 160 Total Capacitive Charge V = 400 V − 51 − nC Total Capacitance VR = 1 V, f = 100 kHz − 866 − pF VR = 300 V, f = 100 kHz − 80 − VR = 600 V, f = 100 kHz − 70 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH4065BDN−F085 FFSH4065BDN TO−247−3LD (Pb−Free / Halogen Free) 30 Units / Tube www.onsemi.com 2 FFSH4065BDN−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted (per leg)) −5 10 TJ = −55o C TJ = 25o C 30 TJ = 75o C IR , REVERSE CURRENT (A) I F , FORWARD CURRENT (A) 40 TJ = 175o C TJ = 125o C 20 10 0 0.0 −6 10 TJ = 175 o C −7 10 TJ = 125oC TJ = 75oC TJ = 25oC TJ = −55oC −8 10 −9 0.5 1.0 1.5 2.0 2.5 VF, FORWARD VOLTAGE (V) 10 3.0 100 IF , PEAK FORWARD CURRENT (A) Figure 1. Forward Characteristics 200 300 400 500 600 650 VR , REVERSE VOLTAGE (V) Figure 2. Reverse Characteristics 200 D = 0.1 150 D = 0.2 100 D = 0.3 D = 0.5 50 D = 0.7 D = 1 0 25 50 75 100 125 150 TC, CASE TEMPERATURE 175 (o C) 180 90 QC , CAPACITIVE CHARGE (nC) P TOT , POWER DISSIPATION (W) Figure 3. Current Derating 120 60 0 25 50 75 100 125 150 60 30 175 0 0 100 200 300 400 500 600 650 VR , REVERSE VOLTAGE (V) TC , CASE TEMPERATURE (o C) Figure 4. Power Derating Figure 5. Capacitive Charge vs. Reverse Voltage www.onsemi.com 3 FFSH4065BDN−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 2000 EC , CAPACITIVE ENERGY ( mJ) 20 CAPACITANCE (pF) 1000 100 50 0.1 1 10 100 650 15 10 5 0 0 100 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 300 400 500 600 650 V R, REVERSE VOLTAGE (V) Figure 6. Capacitance vs. Reverse Voltage 2 1 200 Figure 7. Capacitance Stored Energy DUTY CYCLE−DESCENDING ORDER D=0.5 PDM 0.1 D=0.05 D=0.02 0.01 D=0.2 D=0.1 t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 1.17 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t 1 / t 2 D=0.01 SINGLE PULSE 0.001 10 −6 10 −5 10 −4 10 −3 10 −2 10 −1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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