FFSH50120A

Silicon Carbide Schottky Diode 1200 V, 50 A FFSH50120A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. 1. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 441 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 1 2 TO−247−2LD CASE 340CL MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSH 50120A $Y &Z &3 &K FFSH50120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 December, 2019 − Rev. 3 1 Publication Order Number: FFSH50120A/D FFSH50120A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 1200 V Single Pulse Avalanche Energy (Note 1) 441 mJ Continuous Rectified Forward Current @ TC < 155°C 50 A Symbol VRRM EAS IF Continuous Rectified Forward Current @ TC < 135°C IF, Max Non-Repetitive Peak Forward Surge Current 77 A TC = 25°C, 10 ms 1700 A TC = 150°C, 10 ms 1600 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 280 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 85 A Ptot Power Dissipation TC = 25°C 736 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range TO−247 Mounting Torque, M3 Screw 147 W −55 to +175 °C 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 441 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 42 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.17 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 50 A, TC = 25°C − 1.45 1.75 V IF = 50 A, TC = 125°C − 1.7 2.0 IF = 50 A, TC = 175°C − 2.0 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 Total Capacitive Charge V = 800 V − 252 − nC Total Capacitance VR = 1 V, f = 100 kHz − 2560 − pF VR = 400 V, f = 100 kHz − 234 − VR = 800 V, f = 100 kHz − 190 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH50120A FFSH50120A TO−247−2LD 30 Units / Tube www.onsemi.com 2 FFSH50120A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 TJ = 125 TJ = 75 40 oC oC TJ = 25 oC TJ = 175 oC 30 TJ = 175 oC I R , REVERSE CURRENT (m A) I F , FORWARD CURRENT (A) 50 20 10 TJ = −55oC TJ = 125 −6 10 TJ = 75 −7 10 TJ = −55oC −8 10 TJ = 25 oC 0.5 1.0 1.5 2.0 10 2.5 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) VF , FORWARD VOLTAGE (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 1000 PTOT, POWER DISSIPATION (W) 800 IF, PEAK FORWARD CURRENT (A) oC −9 0 0.0 D = 0.1 600 D = 0.2 400 D = 0.3 D = 0.5 200 D = 0.7 0 25 D=1 50 75 100 125 150 800 600 400 200 0 25 175 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) o TC, CASE TEMPERATURE ( C) Figure 3. Current Derating Figure 4. Power Derating 300 10000 250 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) oC 200 150 100 1000 50 0 0 150 300 450 600 750 100 0.1 900 VR, REVERSE VOLTAGE (V) 1 10 100 900 VR , REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSH50120A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY (mJ) 100 80 60 40 20 0 0 150 300 450 600 750 900 VR , REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER PDM 0.1 0.5 t1 0.2 0.01 0.001 −6 10 0.02 0.01 0.05 t2 0.1 ZqJC(t) = r(t) x RqJC RqJC = 0.17 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −5 10 −4 10 −3 10 −2 10 −1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 1 FFSH50120A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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