FFSH5065B-F085

FFSH5065B-F085 Silicon Carbide Schottky Diode 650 V, 50 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1. Cathode Schottky Diode Features • • • • • • • • 2. Anode Max Junction Temperature 175°C Avalanche Rated 225 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant TO−247−2LD CASE 340DA MARKING DIAGRAM Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol VRRM EAS IF IF, Max IF, SM Ptot Parameter Ratings Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 225 mJ Continuous Rectified Forward Current @ TC < 132°C 50 A @ TC < 135°C 48 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 1358 TC = 150°C, 10 ms 1281 Non−Repetitive Forward Surge Current TC = 25°C Half−Sine Pulse, tp = 8.3 ms 189 A 301 W Power Dissipation Unit TC = 25°C TC = 150°C TJ,TSTG Operating and Storage Temperature Range TO247 Mounting Torque, M3 Screw $Y&Z&3&K FFSH 5065B A $Y &Z &3 &K FFSH5065B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code 50 −55 to +175 °C 60 Ncm ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 225 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 30 A, V = 100 V © Semiconductor Components Industries, LLC, 2019 August, 2019 − Rev. 0 1 Publication Order Number: FFSH5065B−F085/D FFSH5065B−F085 THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit 0.5 °C/W Thermal Resistance, Junction to Case, Max RqJC ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Min Typ Max Unit IF = 50 A, TC = 25°C − 1.38 1.7 V IF = 50 A, TC = 125°C − 1.6 2.0 IF = 50 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − 0.5 40 VR = 650 V, TC = 125°C − 1 80 VR = 650 V, TC = 175°C − 2 160 Total Capacitive Charge V = 400 V − 120 − nC Total Capacitance VR = 1 V, f = 100 kHz − 2030 − pF VR = 300 V, f = 100 kHz − 187 − VR = 600 V, f = 100 kHz − 167 − Symbol VF Forward Voltage IR Reverse Current QC C Test Conditions mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping FFSH5065B−F085 FFSH5065B TO−247−2LD (Pb−Free/Halogen Free) 30 Units/Tube www.onsemi.com 2 FFSH5065B−F085 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) TJ = −55 o C TJ = 25 o C 80 TJ = 75 o C IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 100 TJ = 175 C o 60 TJ = 125o C 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 10 −5 10 −6 10 −7 TJ = 175 o C TJ = 125 o C T J = 75 C o 10 −8 10 −9 TJ = 25 o C o T J = −55 C 100 200 V F, FORWARD VOLTAGE (V) 350 D = 0.1 350 P TOT , POWER DISSIPATION (W) IF , PEAK FORWARD CURRENT (A) 600 650 500 Figure 2. Reverse Characteristics 400 300 D = 0.2 250 D = 0.3 200 D = 0.5 150 100 D = 0.7 50 25 D=1 50 75 100 125 150 300 250 200 150 100 50 0 175 25 50 T C , CASE TEMPERATURE ( C) 75 100 125 150 175 TC , CASE TEMPERATURE ( C) o o Figure 3. Current Derating Figure 4. Power Derating 200 5000 160 CAPACITANCE (pF) Q C , CAPACITIVE CHARGE (nC) 400 V R , REVERSE VOLTAGE (V) Figure 1. Forward Characteristics 0 300 120 80 1000 40 0 0 100 200 300 400 500 600 650 100 0.1 1 10 100 V R , REVERSE VOLTAGE (V) V R , REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSH5065B−F085 TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) EC , CAPACITIVE ENERGY ( m J) 40 30 20 10 0 0 100 200 300 400 500 600 650 V R , REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D=0.5 PDM 0.1 D=0.2 D=0.1 t1 t2 D=0.05 D=0.02 0.01 D=0.01 NOTES: ZqJC (t) = r(t) × RqJC RqJC = 0.5°C/W Peak TJ = PDM × ZqJC (t) + TC Duty cycle, D = t1/t2 SINGLE PULSE 0.001 −6 10 10 −5 10 −4 10 −3 10 −2 10 1 −1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 100 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340DA ISSUE A DATE 27 FEB 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb− Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON00714H TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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