FFSM0465A

Silicon Carbide Schottky Diode 650 V, 4 A FFSM0465A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 5. Cathode 3, 4. Anode 1, 2. Floating Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 23 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Pin1 5 4 3 21 PQFN 8y8, 2P CASE 483AP MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSM 0465A $Y &Z &3 &K FFSM0465A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 December, 2019 − Rev. 1 1 Publication Order Number: FFSM0465A/D FFSM0465A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol VRRM EAS Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy IF (Note 1) Continuous Rectified Forward Current @ TC < 152°C IF, Max Value Unit 650 V 23 mJ 4 A Continuous Rectified Forward Current @ TC < 135°C 5.7 Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 320 A TC = 150°C, 10 ms 310 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 21 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 15 A Ptot Power Dissipation TC = 25°C 43 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 7.2 W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 23 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 6.8 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction to Case, Max RqJC Value Unit 3.5 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 4 A, TC = 25°C − 1.50 1.75 V IF = 4 A, TC = 125°C − 1.6 2.0 IF = 4 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 15 − nC Total Capacitance VR = 1 V, f = 100 kHz − 247 − pF VR = 200 V, f = 100 kHz − 29 − VR = 400 V, f = 100 kHz − 22 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping† FFSM0465A FFSM0465A PQFN 8x8, 2P (Pb−Free/Halogen Free) 3000Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FFSM0465A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 103 3.5 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (A) 4.0 3.0 2.5 2.0 1.5 TJ = 25°C TJ = 75°C TJ = 125°C 1.0 0.5 0 TJ = 175°C 0 0.4 TJ = −55°C 0.8 1.2 1.6 100 TJ = 25°C 10−1 TJ = 125°C 10−2 TJ = −55°C TJ = 75°C 100 200 300 400 500 600 700 VR, REVERSE VOLTAGE (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 800 50 PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) TJ = 175°C VF, FORWARD VOLTAGE (V) D = 0.1 50 40 D = 0.2 30 D = 0.3 20 D = 0.5 10 D = 1.0 D = 0.7 25 50 75 100 125 150 40 30 20 10 0 175 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 3. Current Derating Figure 4. Power Derating 175 1000 25 20 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 101 10−3 2.0 60 0 102 15 10 100 5 0 0 100 200 300 400 500 600 650 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSM0465A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITANCE ENERGY (mJ) 6 5 4 3 2 1 0 0 200 600 650 400 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE Figure 7. Capacitance Stored Energy 1 Duty Cycle = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 PDM 0.001 0.0001 Single Pulse 0.000001 t1 0.00001 0.0001 0.001 ZqJC(t) = r(t) x RqJC RqJC = 3.5°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 t2 0.01 0.1 1 t, RECTANGULAR PULSE DURATION (s) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 1 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN4 8X8, 2P CASE 483AP ISSUE A DOCUMENT NUMBER: 98AON13664G DESCRIPTION: PQFN4 8X8, 2P DATE 06 JUL 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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