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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Silicon Carbide Schottky
Diode
650 V, 20 A
FFSM2065B
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
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VRRM
IF
650 V
20 A
Features
•
•
•
•
•
•
•
Max Junction Temperature 175°C
Avalanche Rated 94 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
5 Cathode
3, 4 Anode
1, 2 Floating
Schottky Diode
Pin1
5
Applications
4
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuit
3
21
PQFN 8y8, 2P
CASE 483AP
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, Unless otherwise specified)
Parameter
VRRM
EAS
IF
IF, Max
IF, SM
Ptot
MARKING DIAGRAM
Value
Unit
Peak Repetitive Reverse Voltage
650
V
Single Pulse Avalanche Energy (Note 1)
94
mJ
Continuous Rectified Forward Current
@ TC < 143°C
20
A
Continuous Rectified Forward Current
@ TC < 135°C
23.4
Non−Repetitive
Peak Forward
Surge Current
TC = 25°C, 10 ms
630
TC = 150°C, 10 ms
524
Non−Repetitive
Forward Surge
Current
Half−Sine Pulse,
tp = 8.3 ms
TC = 25°C
77
A
Power Dissipation
TC = 25°C
160
W
TC = 150°C
27
Symbol
TJ, TSTG Operating and Storage Temperature
Range
A
$Y
FFSM
2065B
&Z&K&3
$Y
&Z
&K
&3
FFSM2065B
= ON Semiconductor Logo
= Assembly Plant Code
= Lot Code
= Numeric Date Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. EAS of 94 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 19.4 A, V = 50 V.
© Semiconductor Components Industries, LLC, 2020
July, 2020 − Rev. 1
1
Publication Order Number:
FFSM2065B/D
FFSM2065B
THERMAL CHARACTERISTICS
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case, Max.
Ratings
Unit
0.94
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping†
FFSM2065B
FFSM2065B
PQFN 8X8, 2P
(Halogen Free)
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Symbol
VF
IR
QC
C
Parameter
Forward Voltage
Test Conditions
Min.
Typ.
Max.
Unit
1.7
V
mA
IF = 20 A, TJ = 25°C
1.38
IF = 20 A, TJ = 125°C
1.6
IF = 20 A, TJ = 150°C
1.67
VR = 650 V, TJ = 25°C
0.5
40
VR = 650 V, TJ = 125°C
1
80
VR = 650 V, TJ = 175°C
2
160
Total Capacitive Charge
V = 400 V
51
nC
Total Capacitance
VR = 1 V, f = 100 kHz
866
pF
VR = 200 V, f = 100 kHz
80
VR = 400 V, f = 100 kHz
70
Reverse Current
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FFSM2065B
TYPICAL CHARACTERISTICS
(TJ = 25°C Unless Otherwise Noted)
−5
TJ = 75°C
IR, REVERSE CURRENT (A)
TJ = 25°C
30
TJ = 175°C
TJ = 125°C
20
10
0
IF, PEAK FORWARD CURRENT (A)
10
TJ = −55°C
−6
10
TJ = 175°C
−7
10
TJ = 125°C
TJ = 75°C
TJ = 25°C
−8
10
TJ = −55°C
−9
0
0.5
1.0
1.5
2.0
2.5
10
3.0
100
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
180
200
D = 0.1
150
D = 0.2
100 D = 0.3
D = 0.5
50
D = 0.7
0
25
D=1
50
75
100
125
150
150
120
90
60
30
0
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (5C)
TC, CASE TEMPERATURE (5C)
Figure 3. Current Derating
Figure 4. Power Dissipation
90
5000
1000
CAPACITANCE (pF)
QC, CAPACITANCE CHARGE (nC)
200
VF, FORWARD VOLTAGE (V)
PTOT, POWER DISSIPATION (W)
IF, FORWARD CURRENT (A)
40
60
30
100
0
0
100
200
300
400
500
50
0.1
600 650
1
10
100
650
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitance Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSM2065B
TYPICAL CHARACTERISTICS (continued)
(TJ = 25°C Unless Otherwise Noted)
EC, CAPACITIVE ENERGY (mJ)
20
15
10
5
0
0
100
200
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.1
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
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4
0.1
FFSM2065B
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE O
www.onsemi.com
5
FFSM2065B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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