FFSP0465A

Silicon Carbide Schottky Diode 650 V, 4 A FFSP0465A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com ELECTRICAL CONNECTION Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 25 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 1. Cathode 1 Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits 2. Anode 2 TO−220−2LD CASE 340BB MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Parameter Symbol VRRM FFSP0465A Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 25 mJ Continuous Rectified Forward Current @ TC < 163°C 4 A Continuous Rectified Forward Current @ TC < 135°C 8.6 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 360 TC = 150°C, 10 ms 330 IF, SM Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 38 A IF, RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 18 A Ptot Power Dissipation TC = 25°C 75 W TC = 150°C 12.5 EAS IF IF, Max TJ, TSTG Operating and Storage Temperature Range $Y&Z&3&K FFSP 0465A A −55 to +175 °C $Y &Z &3 &K FFSP0465A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. EAS of 25 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 10 A, V = 50 V. © Semiconductor Components Industries, LLC, 2018 December, 2019 − Rev. 4 1 Publication Order Number: FFSP0465A/D FFSP0465A THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. Ratings Unit 2.0 °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP0465A FFSP0465A TO220 Tube N/A N/A 50 Units ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted Parameter Min. Typ. Max. Unit IF = 4 A, TC = 25°C − 1.50 1.75 V IF = 4 A, TC = 125°C − 1.6 2.0 IF = 4 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 16 − nC Total Capacitance VR = 1 V, f = 100 kHz − 258 − pF VR = 200 V, f = 100 kHz − 29 − VR = 400 V, f = 100 kHz − 21 − Symbol VF IR QC C Forward Voltage Reverse Current Test Conditions www.onsemi.com 2 mA FFSP0465A TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted −6 10 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 4 3 2 TJ = 75 oC 1 TJ = 125 0 0.0 oC TJ = 25 oC TJ = 175 oC 0.5 TJ = −55oC 1.0 −7 10 TJ = 175 oC TJ = 125 1.5 2.0 200 300 400 500 600 650 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 80 60 D = 0.1 D = 0.2 D = 0.3 D = 0.5 20 D = 0.7 0 25 D=1 50 75 100 125 150 60 40 20 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (5C) TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Derating 25 1000 20 CAPACITANCE (pF) QC, CAPACITANCE CHARGE (nC) oC −9 10 PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) TJ = 25 oC TJ = 75 oC 80 40 TJ = −55 oC −8 10 15 10 5 0 0 100 200 300 400 500 100 10 0.1 600 650 1 10 100 650 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSP0465A TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued) EC, CAPACITIVE ENERGY (mJ) 5 4 3 2 1 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER P DM 0.1 0.5 0.01 0.02 0.05 t1 t2 0.2 0.1 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 2.0 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 −6 10 −5 10 −4 −3 10 10 −2 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 −1 10 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7° 3° 5° 3° 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5° 3° 5° 3° 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO−220−2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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