FFSP08120A

Silicon Carbide Schottky Diode 1200 V, 8 A FFSP08120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 80 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications 1 2 TO−220−2LD CASE 340BB MARKING DIAGRAM • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSP 08120A $Y &Z &3 &K FFSP08120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 January, 2020 − Rev. 2 1 Publication Order Number: FFSP08120A/D FFSP08120A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit 1200 V Single Pulse Avalanche Energy (Note 1) 80 mJ Continuous Rectified Forward Current @ TC < 148°C 8 A TC = 25°C, 10 ms 530 A TC = 150°C, 10 ms 480 A Symbol VRRM EAS IF IF,Max Peak Repetitive Reverse Voltage Non-Repetitive Peak Forward Surge Current IF,SM Non-Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 68 A IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 32 A PTOT Power Dissipation TC = 25°C 166 W TC = 150°C 27 W −55 to +175 °C TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 80 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 18 A, V = 150 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.9 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 8 A, TC = 25°C − 1.45 1.75 V IF = 8 A, TC = 125°C − 1.7 2.0 IF = 8 A, TC = 175°C − 2.0 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 Total Capacitive Charge V = 800 V − 55 − nC Total Capacitance VR = 1 V, f = 100 kHz − 538 − pF VR = 400 V, f = 100 kHz − 50 − VR = 800 V, f = 100 kHz − 40 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSP08120A FFSP08120A TO−220−2LD Tube 50 Units www.onsemi.com 2 FFSP08120A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 101 TJ = −55°C TJ = 25°C IR, Reverse Current (mA) IF, Forward Current (A) 15 TJ = 75°C 10 TJ = 125°C TJ = 175°C 5 0 0 1 2 VF, Forward Voltage (V) TJ = 175°C 100 10−1 TJ = 75°C 10−2 TJ = 25°C 10−3 3 200 Figure 1. Forward Characteristics TJ = 125°C TJ = 75°C TJ = 25°C 0.6 TJ = −55°C 0.4 0.2 0.0 1000 1100 1200 1300 1400 100 D = 0.2 80 D = 0.3 60 D = 0.5 40 20 0 1500 D=1 D = 0.7 25 50 75 100 125 150 175 TC, Case Temperature (5C) Figure 4. Current Derating Figure 3. Reverse Characteristics 80 QC, Capacitive Charge (nC) 120 PTOT, Power Dissipation (W) 1200 D = 0.1 120 VR, Reverse Voltage (V) 80 40 0 600 800 1000 400 VR, Reverse Voltage (V) 140 TJ = 175°C 0.8 TJ = −55°C Figure 2. Reverse Characteristics IF, Peak Forward Current (A) IR, Reverse Current (mA) 1.0 TJ = 125°C 25 50 75 100 125 150 60 40 20 0 0 175 200 400 600 800 1000 VR, Reverse Voltage (V) TC, Case Temperature (5C) Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage www.onsemi.com 3 FFSP08120A TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) 25 EC, Capacitive Energy (mJ) Capacitance (pF) 5000 1000 100 10 0.1 1 10 100 20 15 10 5 0 1000 0 400 200 600 800 1000 VR, Reverse Voltage (V) VR, Reverse Voltage (V) Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy 2 ZqJC, Normalized Thermal Impedance DUTY CIRCLE−DESCENDING ORDER 1 D=0.5 PDM 0.2 t1 0.1 0.05 0.1 t2 NOTES: ZqJC(t) = r(t) × RqJC RqJC = 0.9°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.05 10−4 10−3 10−2 10−1 1 t, Rectangular Pulse Duration (s) Figure 9. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 10. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7° 3° 5° 3° 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5° 3° 5° 3° 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO−220−2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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