FFSP1065B

FFSP1065B Silicon Carbide Schottky Diode 650 V, 10 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com ELECTRICAL CONNECTION Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1. Cathode 1 Applications 2. Anode 2 TO−220−2LD CASE 340BB • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuit MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol VRRM EAS IF IF, Max IF, SM Ptot Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 49 mJ Continuous Rectified Forward Current @ TC < 139°C 10 A Continuous Rectified Forward Current @ TC < 135°C 11 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 650 TC = 150°C, 10 ms 570 Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 45 A Power Dissipation TC = 25°C 75 W TC = 150°C 12.5 TJ, TSTG Operating and Storage Temperature Range A $Y&Z&3&K FFSP 1065B $Y &Z &3 &K FFSP1065B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION −55 to +175 °C See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V. © Semiconductor Components Industries, LLC, 2019 September, 2019 − Rev. 0 1 Publication Order Number: FFSP1065B/D FFSP1065B THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. Ratings Unit 2.0 °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP1065B FFSP1065B TO220 Tube N/A N/A 50 Units ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted Parameter Typ. Max. Unit IF = 10 A, TC = 25°C 1.38 1.7 V IF = 10 A, TC = 125°C 1.6 2.0 IF = 10 A, TC = 175°C 1.72 2.4 VR = 650 V, TC = 25°C 0.5 40 VR = 650 V, TC = 125°C 1.0 80 VR = 650 V, TC = 175°C 2.0 160 Total Capacitive Charge V = 400 V 25 nC Total Capacitance VR = 1 V, f = 100 kHz 421 pF VR = 200 V, f = 100 kHz 46 VR = 400 V, f = 100 kHz 35 Symbol VF IR QC C Forward Voltage Reverse Current Test Conditions www.onsemi.com 2 Min. mA FFSP1065B TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted 20 −5 10 TJ = 25°C 15 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) TJ = −55°C TJ = 175°C TJ = 125°C 10 TJ = 75°C 5 0 −6 10 TJ = 175°C −7 10 TJ = 125°C 10 TJ = 25°C 1 2 10 3 300 400 500 600 650 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 200 80 D = 0.1 80 D = 0.2 60 D = 0.3 40 D = 0.5 20 D = 0.7 0 25 D=1 50 75 100 125 150 60 40 20 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (5C) TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Dissipation 1000 40 30 CAPACITANCE (pF) QC, CAPACITANCE CHARGE (nC) TJ = −55°C −9 0 100 20 10 0 TJ = 75°C −8 0 100 200 300 400 500 100 10 0.1 600 650 1 10 100 650 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSP1065B TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued) EC, CAPACITIVE ENERGY (mJ) 10 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.1 D = 0.2 D = 0.1 0.01 D = 0.05 D = 0.02 D = 0.01 SINGLE PULSE 0.001 −6 10 −5 10 −4 −3 10 10 −2 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 −1 10 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7° 3° 5° 3° 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5° 3° 5° 3° 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO−220−2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative