FFSP3065B-F085

FFSP3065B-F085 Silicon Carbide Schottky Diode 650 V, 30 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com ELECTRICAL CONNECTION Features • • • • • • • • Max Junction Temperature 175°C Avalanche Rated 144 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1. Cathode 1 2. Anode 2 TO−220−2LD CASE 340BB Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol VRRM EAS IF, Max IF, SM Ptot FFSP3065B−F085 Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 144 mJ Continuous Rectified Forward Current @ TC < 135°C 30 Parameter Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 1100 TC = 150°C, 10 ms 1000 Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 110 A Power Dissipation TC = 25°C 197 W TC = 150°C 33 TJ, TSTG Operating and Storage Temperature Range A −55 to +175 °C 1. EAS of 144 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 24 A, V = 50 V. © Semiconductor Components Industries, LLC, 2019 September, 2019 − Rev. 4 $Y&Z&3&K FFSP 3065B 1 $Y &Z &3 &K FFSP3065B−F085 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: FFSP3065B−F085/D FFSP3065B−F085 THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. Ratings Unit 0.76 °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP3065B−F085 FFSP3065B TO220 Tube N/A N/A 50 Units ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted Parameter Min. Typ. Max. Unit IF = 30 A, TC = 25°C − 1.38 1.7 V IF = 30 A, TC = 125°C − 1.6 2.0 IF = 30 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − 0.5 40 VR = 650 V, TC = 125°C − 1.0 80 VR = 650 V, TC = 175°C − 2.0 160 Total Capacitive Charge V = 400 V − 74 − nC Total Capacitance VR = 1 V, f = 100 kHz − 1280 − pF VR = 200 V, f = 100 kHz − 139 − VR = 400 V, f = 100 kHz − 108 − Symbol VF IR QC C Forward Voltage Reverse Current Test Conditions www.onsemi.com 2 mA FFSP3065B−F085 TYPICAL CHARACTERISTICS −6 10 IF, PEAK FORWARD CURRENT (A) TJ = −55°C IR, REVERSE CURRENT (A) TJ = 25°C TJ = 75°C 40 TJ = 175°C TJ = 125°C 20 −7 10 TJ = 175°C TJ = 125°C 0.5 1.0 1.5 2.0 2.5 TJ = −55°C 10 3.0 100 200 300 400 500 600 650 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 250 250 200 D = 0.1 D = 0.2 150 D = 0.3 100 D = 0.5 50 D = 0.7 0 25 D=1 50 75 100 125 150 200 150 100 50 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (5C) TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Dissipation 120 5000 90 CAPACITANCE (pF) QC, CAPACITANCE CHARGE (nC) TJ = 75°C TJ = 25°C −8 10 −9 0.0 PTOT, POWER DISSIPATION (W) IF, FORWARD CURRENT (A) 60 0 TJ = 25°C Unless Otherwise Noted 60 30 1000 100 0 0 100 200 300 400 500 50 0.1 600 650 1 10 100 650 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSP3065B−F085 TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued) EC, CAPACITIVE ENERGY (mJ) 30 20 10 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.1 0.01 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 SINGLE PULSE 0.001 −6 10 −5 10 −4 −3 10 10 −2 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 −1 10 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7° 3° 5° 3° 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5° 3° 5° 3° 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO−220−2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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