FFSPF0665A

Silicon Carbide Schottky Diode 650 V, 6 A FFSPF0665A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 1. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 36 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 1 2 TO−220F−2FS CASE 221AS MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSPF 0665A $Y &Z &3 &K FFSPF0665A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 November, 2020 − Rev. 3 1 Publication Order Number: FFSPF0665A/D FFSPF0665A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 36 mJ Continuous Rectified Forward Current @ TC < 134°C 6 A Symbol VRRM EAS IF IF, Max Continuous Rectified Forward Current @ TC < 135°C 5.9 Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 430 A TC = 150°C, 10 ms 415 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 42 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 22 A Ptot Power Dissipation TC = 25°C 35 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 5.8 W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 36 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 12 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Value Unit RqJC Thermal Resistance, Junction to Case, Max Parameter 4.3 °C/W RqJA Thermal Resistance, Junction to Ambient, Max 57 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 6 A, TC = 25°C − 1.50 1.75 V IF = 6 A, TC = 125°C − 1.60 2.0 IF = 6 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 22 − nC Total Capacitance VR = 1 V, f = 100 kHz − 361 − pF VR = 200 V, f = 100 kHz − 41 − VR = 400 V, f = 100 kHz − 32 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSPF0665A FFSPF0665A TO−220F−2L (Pb-Free) 50 Units / Tube www.onsemi.com 2 FFSPF0665A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10−6 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 6 5 10−7 4 3 10−8 2 TJ = 175°C 0 TJ = 25°C TJ = 125°C TJ = 75°C 1 0.0 0.5 TJ = 175°C TJ = −55°C 1.0 1.5 TJ = 125°C TJ = 75°C 10−9 200 2.0 VF, FORWARD VOLTAGE (V) 500 600 650 Figure 2. Reverse Characteristics 40 60 PTOT, POWER DISSIPATION (A) IF, PEEK FORWARD CURRENT (A) TJ = −55°C 400 VR, REVERSE VOLTAGE (V) Figure 1. Forward Characteristics D = 0.1 50 40 D = 0.2 30 D = 0.3 D = 0.5 20 10 D = 0.7 0 25 50 D=1 75 100 125 150 30 20 10 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (5C) TC, CASE TEMPERATURE (5C) Figure 3. Current Derating Figure 4. Power Derating 30 1000 25 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) TJ = 25°C 300 20 15 10 5 0 0 100 200 300 400 500 100 10 0.1 600 650 1 10 100 650 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSPF0665A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY (mJ) 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE − DESCENDING ORDER D = 0.5 0.1 PDM t1 0.01 0.05 0.001 0.01 0.1 t2 0.2 NOTES ZqJC(t) = r(t) x RqJC RqJC = 4.3 °C/W Peak TJ = PDM x ZqJC(t) + TC Duty cycle, D = t1 + t2 0.02 SINGLE PULSE 0.0001 10−6 10−5 10−4 10−3 10−2 10−1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 1 FFSPF0665A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 Fullpack, 2−Lead / TO−220F−2FS CASE 221AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON67438E DATE 29 FEB 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 2−LEAD / TO−220F−2FS PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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