FFSPF1065A

FFSPF1065A Silicon Carbide Schottky Diode 650 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com VRRM IF 650 V 10 A Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 64 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery This Device is Pb−Free and is RoHS Compliant 1. Cathode 2. Anode 1. Cathode 2. Anode 1 2 Applications TO−220F−2L CASE 221AS • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits MARKING DIAGRAM $Y&Z&3&K FFSP F1065A $Y &Z &3 &K FFSPF1065A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 September, 2019 − Rev. 1 1 Publication Order Number: FFSPF1065A/D FFSPF1065A ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol VRRM EAS IF FFSPF1065A Unit Peak Repetitive Reverse Voltage Parameter 650 V Single Pulse Avalanche Energy (Note 1) 64 mJ @TC < 110°C 10 A @ TC < 135°C 7.2 TC = 25°C, 10 μs 720 A Continuous Rectified Forward Current IF, Max Non−Repetitive Peak Forward Surge Current TC = 150°C, 10 μs 680 A IF, SM Non−Repetitive Forward Surge Current Half−Sine Pulse, tP = 8.3 ms 56 A IF, RM Repetitive Forward Surge Current Half−Sine Pulse, tP = 8.3 ms 28 A Power Dissipation TC = 25°C 38 W TC = 150°C 6.4 W −55 to +175 °C Ptot TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 64 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 16 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction to Case, Max. RqJC Ratings Unit 3.9 _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FFSPF1065A FFSPF1065A TO−220F−2L Tube N/A N/A 50 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Forward Voltage Reverse Current Min Typ Max Unit IF = 10 A, TC = 25°C Test Conditions − 1.50 1.75 V IF = 10 A, TC = 125°C − 1.60 2.0 IF = 10 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 mA VR = 650 V, TC = 175°C − − 600 Total Capacitance Charge V = 400 V − 34 − nC Total Capacitance VR = 1 V, f = 100 kHz − 575 − pF VR = 200 V, f = 100 kHz − 62 − VR = 400 V, f = 100 kHz − 47 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FFSPF1065A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 8 IR, Reverse Current (A) IF, Forward Current (A) 10 6 4 TJ = 175 o C 2 0 TJ = 25 oC TJ = 125 o C TJ = 75 oC TJ = −6 10 TJ = 175 oC −7 10 TJ = 125 o C TJ = 75 oC −8 10 −55o C TJ = 25 oC 0.0 0.5 1.0 1.5 10 2.0 200 300 VF, Forward Voltage (V) 600 650 50 PTOT, Power Dissipation (W) IF, Peak Forward Current (A) 40 500 Figure 2. Reverse Characteristics 80 60 400 VR, Reverse Voltage (V) Figure 1. Forward Characteristics D = 0.1 D = 0.2 D = 0.3 D = 0.5 20 D = 0.7 0 25 40 30 20 10 D=1 50 75 100 125 150 0 25 175 TC, Case Temperature (5C) 50 75 100 125 150 175 TC, Case Temperature (5C) Figure 4. Power Derating Figure 3. Current Derating 50 1000 40 Capacitance (pF) QC, Capacitance Charge (nC) TJ = −55 oC −9 30 20 100 10 0 0 100 200 300 400 500 10 0.1 600 650 VR, Reverse Voltage (V) 1 10 100 650 VR, Reverse Voltage (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSPF1065A TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) EC, Capacitive Energy (mJ) 12 10 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, Reverse Voltage (V) Figure 7. Capacitance Stored Energy r(t), Normalized Effective Transient Thermal Resistance 2 1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.1 PDM 0.01 0.05 0.02 0.001 0.1 0.2 t1 Notes: ZqJC(t) = r(t) × RqJC RqJC = 3.9°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.0001 10−6 10−5 10−4 10−3 10−2 10−1 t, Rectangular Pulse Duration (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 4 t2 1 FFSPF1065A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE VAVL R + VDD IL VDD DUT IL I V − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 Fullpack, 2−Lead / TO−220F−2FS CASE 221AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON67438E DATE 29 FEB 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 2−LEAD / TO−220F−2FS PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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