FGA15N120FTDTU

FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench technology, Fairchild®’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven. • Low Saturation Voltage: VCE(sat) = 1.58 V @ IC = 15 A • High Input Impedance • RoHS Complaint Applications • Induction Heating, Microwave Oven C G TO-3PN G CE E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC V  25 V @ TC = 25oC 30 A Collector Current o 15 A 45 A 15 A 90 A 220 W @ TC = 100 C Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current TJ Unit 1200 Collector Current ICM (1) PD Ratings @ TC = 100oC o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C 88 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit oC/W RJC(IGBT) Thermal Resistance, Junction to Case - 0.57 RJC(Diode) Thermal Resistance, Junction to Case - 2.1 o C/W 62.5 o C/W RJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 1 www.fairchildsemi.com FGA15N20FTD 1200 V, 15 A Field Stop Trench IGBT March 2013 Device Marking Device Package Reel Size Tape Width Quantity FGA15N120FTD FGA15N120FTDTU TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1200 - - V  Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 15mA, VCE = VGE  On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 6 7.5 V IC = 15A, VGE = 15V - 1.58 2 V IC = 15A, VGE = 15V, TC = 125oC - 1.83 - V - 2350 - pF - 70 - pF - 45 - pF 33 - ns  Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz  Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 80 - ns td(off) Turn-Off Delay Time - 160 - ns tf Fall Time - 255 330 ns Eon Turn-On Switching Loss - 0.3 - mJ Eoff Turn-Off Switching Loss - 0.58 0.74 mJ Ets Total Switching Loss - 0.88 - mJ td(on) Turn-On Delay Time - 30 - ns tr Rise Time - 115 - ns td(off) Turn-Off Delay Time - 170 - ns tf Fall Time - 390 - ns Eon Turn-On Switching Loss - 0.38 - mJ Eoff Turn-Off Switching Loss - 0.89 - mJ Ets Total Switching Loss - 1.27 - mJ Qg Total Gate Charge - 100 - nC - 19 - nC - 45 - nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 VCC = 600V, IC = 15A, RG = 15, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 15A, RG = 15, VGE = 15V, Resistive Load, TC = 125oC VCE = 600V, IC = 15A, VGE = 15V 2 www.fairchildsemi.com FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Cyrrent Qrr Diode Reverse Recovery Charge ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 TC = 25°C unless otherwise noted Test Conditions IF = 15A IES =15A, dI/dt = 200A/s Min. Typ. Max TC = 25oC - 1.4 1.8 TC = 125oC - 1.42 - TC = 25oC - 575 - - 577 - TC = 25oC - 30 - o TC = 125 C - 37 - TC = 25oC - 8.7 - o - 10.7 - TC = 125oC TC = 125 C 3 Unit V ns A C www.fairchildsemi.com FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics o o TC = 25 C TC = 125 C 20V 17V 90 15V 12V 60 10V 30 20V 17V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 120 120 90 12V 15V 60 10V 30 VGE = 8V VGE = 8V 0 0 0 2 4 6 8 10 Collector-Emitter Voltage, VCE [V] 0 12 Figure 3. Typical Saturation Voltage Characteristics 100 Common Emitter VCE = 20V Common Emitter VGE = 15V o 80 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 12 Figure 4. Transfer Characteristics 100 o TC = 125 C 60 40 20 o 80 TC = 25 C o TC = 125 C 60 40 20 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 2 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 6 8 10 12 Gate-Emitter Voltage,VGE [V] 14 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Common Emitter 30A 2.4 2.0 15A 1.6 IC = 10A 1.2 25 4 Figure 6. Saturation Voltage vs. VGE 2.8 Collector-Emitter Voltage, VCE [V] 2 4 6 8 10 Collector-Emitter Voltage, VCE [V] o TC = 25 C 16 12 8 4 0 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 4 15A 30A IC = 10A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 4000 20 Common Emitter VGE = 0V, f = 1MHz Common Emitter Cies 16 12 8 2000 Coes 1000 15A 4 30A Cres IC = 10A 0 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics o TC = 25 C VCC = 200V 10s 400V Collector Current, Ic [A] 10 600V 5 0 30 60 90 Gate Charge, Qg [nC] 100s 10 1ms 10ms IC MAX (Continuous) 1 DC Operation *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 0.01 120 1 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 1000 Collector-Emitter Voltage, VCE [V] 2000 Figure 12. Turn-off Characteristics vs. Gate Resistance 2000 300 Common Emitter VCC = 600V, VGE = 15V IC = 15A 1000 o 100 tr td(on) Common Emitter VCC = 600V, VGE = 15V IC = 15A td(off) TC = 25 C Switching Time [ns] Switching Time [ns] 30 200 100 IC MAX (Pulse) Common Emitter 0 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] o TC = 25 C 3000 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C o TC = 125 C tf o TC = 25 C 100 o TC = 125 C 70 10 0 20 40 60 80 Gate Resistance, RG [] ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 100 0 20 40 60 80 100 Gate Resistance, RG [] 5 www.fairchildsemi.com FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 600 Figure 14. Turn-off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 15 o tf TC = 25 C Switching Time [ns] TC = 125 C Switching Time [ns] tr o 100 td(on) td(off) 100 Common Emitter VGE = 15V, RG = 15 o TC = 25 C o TC = 125 C 10 10 15 20 25 10 10 30 15 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 30 10000 Common Emitter VCC = 600V, VGE = 15V Common Emitter VGE = 15V, RG = 15 IC = 15A TC = 25 C o o TC = 25 C Switching Loss [J] Switching Loss [J] 25 Figure 16. Switching Loss vs. Collector Current 10000 o TC = 125 C Eoff 1000 Eon 100 20 Collector Current, IC [A] 0 20 40 60 80 Gate Resistance, RG [] o TC = 125 C Eoff 1000 Eon 100 10 100 15 20 25 30 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 40 Forward Current, IF [A] Collector Current, IC [A] 80 10 10 o TJ = 125 C o TJ = 25 C 1 o TC = 25 C Safe Operating Area o VGE = 15V, TC = 125 C o TC = 125 C 0.1 0.0 1 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 6 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 www.fairchildsemi.com FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 14000 12000 Stored Recovery Charge, Qrr [nC] Reverse Recovery Currnet, Irr [A] 40 200A/s 30 200A/s 10000 20 di/dt = 100A/s 10 0 5 10 15 20 Forward Current, IF [A] 25 30 25 30 8000 6000 di/dt = 100A/s 4000 2000 0 5 10 15 20 Forward Current, IF [A] 25 30 Figure 21.Reverse Recovery Time Reverse Recovery Time, trr [ns] 800 di/dt = 100A/s 600 200A/s 400 200 5 10 15 20 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 7 www.fairchildsemi.com FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Typical Performance Characteristics FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. C0 9 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Field Stop Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* PowerTrench® AX-CAP®* FRFET® Global Power ResourceSM PowerXS™ BitSiC™ TinyBoost™ Programmable Active Droop™ Green Bridge™ Build it Now™ TinyBuck™ QFET® Green FPS™ CorePLUS™ TinyCalc™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyLogic® Quiet Series™ Gmax™ CROSSVOLT™ TINYOPTO™ RapidConfigure™ GTO™ CTL™ TinyPower™ IntelliMAX™ Current Transfer Logic™ ™ TinyPWM™ ISOPLANAR™ DEUXPEED® TinyWire™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ Dual Cool™ TranSiC® SignalWise™ and Better™ EcoSPARK® TriFault Detect™ SmartMax™ EfficentMax™ MegaBuck™ TRUECURRENT®* ESBC™ SMART START™ MICROCOUPLER™ SerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™