FGA20S125P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA20S125P 1250 V, 20 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. • Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 20 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave oven C G TO-3PN E G C E Absolute Maximum Ratings T Symbol = 25°C unless otherwise noted Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC C FGA20S125P_SN00336 Unit 1250 V ±25 V Collector Current @ TC = 25oC 40 A Collector Current @ TC = 100oC 20 A 60 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current @ TC = 25oC 40 A IF Diode Continuous Forward Current @ TC = 100oC 20 A 250 W PD TJ Maximum Power Dissipation Maximum Power Dissipation o @ TC = 25 C @ TC = 100oC 125 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +175 o -55 to +175 o C C oC 300 Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. Max. -- 0.6 o 40 o -- Unit C/W C/W Notes: 1: Limited by Tjmax © 2014 Fairchild Semiconductor Corporation FGA20S125P Rev. C1 1 www.fairchildsemi.com FGA20S125P — 1250 V, 20 A Shorted-anode IGBT November 2014 Device Marking Device Package Reel Size Tape Width Quantity FGA20S125P FGA20S125P _SN00336 TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 1250 - - V ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA - 1.2 - V/oC ICES Collector Cut-Off Current VCE = 1250, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±500 nA IC = 20mA, VCE = VGE 4.5 6.0 7.5 V IC = 20A, VGE = 15V TC = 25oC - 2.0 2.5 V IC = 20A, VGE = 15V, TC = 125oC - 2.22 - V IC = 20A, VGE = 15V, TC = 175oC - 2.44 - V IF = 20A, TC = 25oC - 1.75 2.4 V o IF = 20A, TC = 175 C - 2.22 - V - 1360 - pF VCE = 30V, VGE = 0V, f = 1MHz - 40 - pF - 26 - pF On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characcteristics td(on) Turn-On Delay Time - 10 - ns tr Rise Time - 260 - ns td(off) Turn-Off Delay Time - 400 - ns tf Fall Time - 100 - ns Eon Turn-On Switching Loss - 0.74 - mJ Eoff Turn-Off Switching Loss - 0.50 - mJ Ets Total Switching Loss - 1.24 - mJ td(on) Turn-On Delay Time - 11 - ns tr Rise Time - 320 - ns td(off) Turn-Off Delay Time - 420 - ns tf Fall Time - 250 - ns Eon Turn-On Switching Loss - 0.94 - mJ Eoff Turn-Off Switching Loss - 1.23 - mJ Ets Total Switching Loss - 2.17 - mJ Qg Total Gate Charge - 153 - nC - 12 - nC - 98 - nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge © 2014 Fairchild Semiconductor Corporation FGA20S125P Rev. C1 VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC VCE = 600V, IC = 20A, VGE = 15V 2 www.fairchildsemi.com FGA20S125P — 1250 V, 20 A Shorted-anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 160 160 TC = 175 C 20V 140 140 15V VGE = 20V Collector Current, IC [A] 120 VGE = 17V 100 12V 80 60 10V 40 9V 20 8V 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Collector-Emitter Voltage, VCE [V] 15V 80 12V 60 40 10V 20 9V 8V 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Collector-Emitter Voltage, VCE [V] 8.0 80 Common Emitter VCE = 20V Common Emitter VGE = 15V o o Collector Current, IC [A] Collector Current, IC [A] 17V 100 Figure 4. Transfer Characteristics 120 TC = 25 C o 80 120 0 0.0 8.0 Figure 3. Typical Saturation Voltage Characteritics 100 o o TC = 25 C Collector Current, IC [A] Figure 2. Typical Saturation Voltage Characteristics TC = 175 C 60 40 TC = 25 C 60 T = 175oC C 40 20 20 0 0.0 0 1.0 2.0 3.0 4.0 Collector-Emitter Voltage, VCE [V] 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Gate-Emitter Voltage,VGE [V] 5.0 Figure 5. Saturation Voltage vs. Case 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3.5 Figure 6. Saturation Voltage vs. Vge 40A 3.0 2.5 20A 2.0 IC = 10A 1.5 1.0 25 50 75 100 125 150 o Case Temperature, TC [ C] © 2014 Fairchild Semiconductor Corporation FGA20S125P Rev. C1 o TC = 25 C 15 10 3 IC = 10A 5 0 175 Common Emitter 4 20A 40A 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA20S125P — 1250 V, 20 A Shorted-anode IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics 10000 20 Common Emitter o Collector-Emitter Voltage, VCE [V] TC = 175 C Cies 16 Capacitance [pF] 1000 12 8 IC = 10A 4 100 Coes Cres 10 40A 20A Common Emitter VGE = 0V, f = 1MHz o TC = 25 C 0 1 4 8 12 16 Gate-Emitter Voltage, VGE [V] 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 20 Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics 100 15 Common Emitter 10µs 400V o TC = 25 C 600V 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 VCC = 200V 9 6 3 10 100µs 1ms 1 10ms DC 0.1 *Notes: o 1. TC = 25 C o 0.01 1 0 0 30 60 90 120 Gate Charge, Qg [nC] 150 Figure 11. Turn-On Characteristics vs Gate Resistance 2. TJ = 175 C 3. Single Pulse 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-off Characteristics vs. Gate Resistance 10000 200 Common Emitter VCC = 600V, VGE = 15V IC = 20A td(on) o Switching Time [ns] Switching Time [ns] tr Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C o TC = 175 C td(off) 1000 tf o TC = 25 C 100 o TC = 175 C 1 5 10 20 30 40 50 60 Gate Resistance, RG [Ω] © 2014 Fairchild Semiconductor Corporation FGA20S125P Rev. C1 0 70 4 10 20 30 40 50 Gate Resistance, RG [Ω] 60 70 www.fairchildsemi.com FGA20S125P — 1250 V, 20 A Shorted-anode IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics VS. Collector Current Figure 14.Turn-off Characteristics VS. Collector Current Common Emitter VGE = 15V, RG = 10Ω 1000 o TC = 25 C 1000 o TC = 25 C o TC = 175 C o tr TC = 175 C Switching Time [ns] Switching Time [ns] Common Emitter VGE = 15V, RG = 10Ω 100 td(on) td(off) tf 100 10 10 20 30 40 10 20 30 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss VS. Gate Resistance Figure 16. Switching Loss VS. Collector Current 10 30 Common Emitter VCC = 600V, VGE = 15V 10k IC = 20A TC = 25 C Switching Loss [uJ] Switching Loss [mJ] o o TC = 175 C Eoff Eon 1 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 175 C Eoff 1k Eon 0.1 10 20 30 40 50 Gate Resistance, RG [Ω] 60 100 10 70 Figure 17. Turn off Switching SOA Characteristics 40 Forward Current, IF [A] 80 10 Safe Operating Area 10 1 o TC = 25 C o VGE = 15V, TC = 175 C 1 20 30 Collector Current, IC [A] FIgure 18. Forward Characteristics 100 Collector Current, IC [A] 40 1 o TC = 175 C 0.1 0.5 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] © 2014 Fairchild Semiconductor Corporation FGA20S125P Rev. C1 5 1 Forward Voltage, VF [V] 2 www.fairchildsemi.com FGA20S125P — 1250 V, 20 A Shorted-anode IGBT Typical Performance Characteristics FGA20S125P — 1250 V, 20 A Shorted-anode IGBT Figure 19. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] © 2014 Fairchild Semiconductor Corporation FGA20S125P Rev. C1 6 www.fairchildsemi.com FGA20S125P — 1250 V, 20 A Shorted-anode IGBT Mechanical Dimensions Figure 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003 © 2014 Fairchild Semiconductor Corporation FGA20S125P Rev. C1 7 www.fairchildsemi.com 仙童 *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 © 2014 Fairchild Semiconductor Corporation FGA20S125P Rev. C1 8 www.fairchildsemi.com FGA20S125P — 1250 V, 20 A Shorted-anode IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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