FGA25N120ANTDTU

1200 V, 25 A NPT Trench IGBT Features Description • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven. • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven C G TO-3P G C E E Absolute Maximum Ratings Symbol Description VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC ICM (1) IF IFM PD Collector Current @ TC = 25°C Collector Current @ TC = 100°C Ratings Unit 1200 V ± 20 V 50 A Pulsed Collector Current 25 A 90 A Diode Continuous Forward Current @ TC = 25°C 50 A Diode Continuous Forward Current @ TC = 100°C 25 A Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C Maximum Power Dissipation @ TC = 100°C 150 A 312 W 125 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) Parameter Thermal Resistance, Junction-to-Case Typ. Max. Unit -- 0.4 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2006 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publication Order Number: FGA25N120ANTDTU/D FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU Part Number Top Mark Package Packing Method FGA25N120ANTDTU-F109 FGA25N120ANTDTU TO-3PN Tube Electrical Characteristics of the IGBT Symbol Parameter Reel Size Tape Width Quantity N/A N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 3 mA IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ± 250 nA 3.5 5.5 7.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 25 mA, VCE = VGE VGE = 15 V -- 2.0 -- V VCE(sat) Collector to Emitter Saturation Voltage IC = 25 A, VGE = 15 V, TC = 125°C -- 2.15 -- V IC = 50 A, -- 2.65 -- V IC = 25 A, VGE = 15 V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz -- 3700 -- pF -- 130 -- pF -- 80 -- pF 50 -- ns Switching Characteristics td(on) Turn-On Delay Time -- tr Rise Time -- 60 -- ns td(off) Turn-Off Delay Time -- 190 -- ns tf Fall Time -- 100 -- ns Eon Turn-On Switching Loss -- 4.1 -- mJ Eoff Turn-Off Switching Loss -- 0.96 -- mJ Ets Total Switching Loss -- 5.06 -- mJ VCC = 600 V, IC = 25 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C td(on) Turn-On Delay Time -- 50 -- ns tr Rise Time -- 60 -- ns td(off) Turn-Off Delay Time -- 200 -- ns tf Fall Time -- 154 -- ns Eon Turn-On Switching Loss -- 4.3 -- mJ Eoff Turn-Off Switching Loss -- 1.5 -- mJ VCC = 600 V, IC = 25 A, RG = 10Ω, VGE = 15 V, Inductive Load, TC = 125°C Ets Total Switching Loss -- 5.8 -- mJ Qg Total Gate Charge -- 200 -- nC Qge Gate-Emitter Charge -- 15 -- nC Qgc Gate-Collector Charge -- 100 -- nC VCE = 600 V, IC = 25 A, VGE = 15 V www.onsemi.com 2 FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT Package Marking and Ordering Information C Symbol Parameter = 25°C unless otherwise noted Test Conditions VFM Diode Forward Voltage IF = 25 A trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Cur- IF = 25 A rent diF/dt = 200 A/μs Qrr Diode Reverse Recovery Charge Min. Typ. Max. TC = 25°C -- 2.0 3.0 TC = 125°C -- 2.1 -- TC = 25°C -- 235 350 TC = 125°C -- 300 -- TC = 25°C -- 27 40 TC = 125°C -- 31 -- TC = 25°C -- 3130 4700 TC = 125°C -- 4650 -- www.onsemi.com 3 Unit V ns A nC FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT Electrical Characteristics of DIODE T Figure 1. Typical Output Characteristics 180 20V TC = 25°C 120 15V 12V 17V 160 Figure 2. Typical Saturation Voltage Characteristics 10V Common Emitter VGE = 15V 100 TC = 25°C 120 9V 100 80 8V 60 40 Collector Current, IC [A] Collector Current, IC [A] 140 60 40 20 7V 20 TC = 125°C 80 VGE = 6V 0 0 0 2 4 6 8 10 0 Collector-Emitter Voltage, VCE [V] 20 Common Emitter VGE = 15V 2.5 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3 40A IC = 25A 2.0 4 5 Figure 4. Saturation Voltage vs. VGE Common Emitter TC = -40°C 16 12 8 4 1.5 40A 25A IC = 12.5A 0 25 50 75 100 125 0 4 Case Temperature, TC [°C] 20 12 16 20 Figure 6. Saturation Voltage vs. VGE 20 Common Emitter TC = 25°C Collector-Emitter Voltage, VCE [V] 16 12 8 40A 25A 4 8 Gate-Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 2 Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 1 IC = 12.5A Common Emitter TC = 125°C 16 12 0 8 40A 25A 4 IC = 12.5A 0 0 4 8 12 16 20 0 Gate-Emitter Voltage, VGE [V] 4 8 12 Gate-Emitter Voltage, VGE [V] www.onsemi.com 4 16 20 FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics 5000 4500 Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VGE = 0V, f = 1MHz Ciss TC = 25°C 4000 100 Switching Time [ns] 3500 Capacitance [pF] (Continued) 3000 2500 2000 1500 tr td(on) Common Emitter VCC = 600V, VGE = ±15V 1000 IC = 25A Coss TC = 25°C 500 TC = 125°C Crss 0 10 1 10 0 10 20 Collector-Emitter Voltage, VCE [V] 30 40 50 60 70 Gate Resistance, RG [Ω ] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VCC = 600V, VGE = ±15V IC = 25A TC = 25°C 10 TC = 125°C Switching Loss [mJ] Switching Time [ns] td(off) 100 tf Common Emitter VCC = 600V, VGE = ±15V IC = 25A Eon Eoff 1 TC = 25°C TC = 125°C 10 0 10 20 30 40 50 60 70 0 10 Gate Resistance, RG [Ω ] 20 30 40 50 60 70 Gate Resistance, RG [Ω ] Figure 11. Turn-On Characteristics vs. Collector Current Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = ±15V, RG = 10Ω TC = 25°C td(off) tr Switching Time [ns] Switching Time [ns] TC = 125°C 100 td(on) 100 tf Common Emitter VGE = ±15V, RG = 10Ω TC = 25°C TC = 125°C 10 20 30 40 50 10 Collector Current, IC [A] 20 30 Collector Current, IC [A] www.onsemi.com 5 40 50 FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics 16 Common Emitter VGE = ±15V, RG = 10Ω Gate-Emitter Voltage, VGE [V] 10 TC = 125°C Switching Loss [mJ] Common Emitter RL = 24Ω 14 Eon TC = 25°C Eoff 1 0.1 TC = 25°C 12 600V Vcc = 200V 400V 10 8 6 4 2 0 10 20 30 40 50 0 20 40 Collector Current, IC [A] 60 80 100 120 140 160 180 Gate Charge, Qg [nC] Figure 15. SOA Characteristics Figure 16. Turn-Off SOA 100 Ic MAX (Pulsed) 100 50μs Ic MAX (Continuous) Collector Current, IC [A] Collector Current, Ic [A] 100μs 10 1ms DC Operation 1 Single Nonrepetitive Pulse TC = 25°C 0.1 10 Curves must be derated linearly with increase in temperature 0.01 0.1 1 10 100 Safe Operating Area VGE = 15V, TC = 125°C 1 1000 1 Collector - Emitter Voltage, VCE [V] 10 100 Collector-Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 0 1 1 1 ] c j h t Z [ e s n o p s e R l a m r e h T 0.5 . 0 0.2 0.1 Pdm 0.05 1 0 . 0 t1 0.02 t2 0.01 0 1 ] c e s [ n o i t a r u D e s l u P r a l u g n a t c e R www.onsemi.com 6 1 1 . 0 1 0 . 0 3 E 1 4 E 1 5 E 31 E 1 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC single pulse 1000 200 FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT Typical Performance Characteristics Figure 18. Forward Characteristics (Continued) Figure 19. Reverse Recovery Current 30 Reverse Recovery Currnet , Irr [A] Forward Current , IF [A] 50 10 T J = 125 ° Χ ) 1 T J = 25 ° Χ ) T C = 125 ° Χ ) T C = 25 ° Χ ) 0.1 0.0 0.4 0.8 1.2 1.6 25 diF /dt = 200A/ μ s 20 15 diF /dt = 100A/μ s 10 5 0 5 2.0 Figure 20. Stored Charge 15 20 25 Figure 21. Reverse Recovery Time 4000 300 3000 Reverse Recovery Time , trr [ns] Stored Recovery Charge , Qrr [nC] 10 Forward Current , IF [A] Forward Voltage , V F [V] di F /dt = 200A / μ s 2000 di F /dt = 100A / μ s 1000 diF /dt = 100A/ μ s 200 diF/dt = 200A/ μ s 100 0 5 0 5 10 15 20 25 10 15 Forward Current , IF [A] Forward Current , IF [A] www.onsemi.com 7 20 25 FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT Typical Performance Characteristics FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT Mechanical Dimensions Figure 22. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. 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