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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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1250 V, 25 A Shorted-anode IGBT
Features
General Description
• High Speed Switching
Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer
superior con-duction and switching performances for
soft switching applications. The device can operate in
parallel configuration with exceptional avalanche capability .
This device is designed for induction heating and microwave
oven.
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
C
G
TO-3PN
E
G CE
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
IF
PD
FGA25S125P-SN00337
Unit
1250
V
25
V
Collector Current
@ TC = 25oC
50
A
Collector Current
@ TC = 100oC
25
A
75
A
Pulsed Collector Current
o
Diode Continuous Forward Current
@ TC = 25 C
50
A
Diode Continuous Forward Current
@ TC = 100oC
25
A
W
o
Maximum Power Dissipation
@ TC = 25 C
250
Maximum Power Dissipation
@ TC = 100oC
125
W
TJ
Operating Junction Temperature
-55 to +175
oC
Tstg
Storage Temperature Range
-55 to +175
o
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
C
oC
300
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Typ.
Max.
-
0.6
o
C/W
40
o
C/W
-
Unit
Notes:
1: Limited by Tjmax
©2012 Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Publication Order Number:
FGA25S125P/D
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
FGA25S125P
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA25S125P
FGA25S125P
-SN00337
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
1250
-
-
V
-
1.2
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
ICES
Collector Cut-Off Current
VCE = 1250V, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±500
nA
IC = 25mA, VCE = VGE
VGE = 0 V, IC = 1mA
On Characteristics
VGE(th)
VCE(sat)
VFM
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Diode Forward Voltage
4.5
6.0
7.5
V
IC = 25A, VGE = 15V
TC = 25oC
-
1.8
2.35
V
IC = 25A, VGE = 15V
TC = 125oC
-
2.05
-
V
IC = 25A, VGE = 15V,
TC = 175oC
-
2.16
-
V
IF = 25A, TC = 25oC
-
1.7
2.4
V
175oC
-
2.1
-
V
-
2150
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
48
-
pF
-
36
-
pF
-
24
-
ns
IF = 25A, TC =
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
250
-
ns
td(off)
Turn-Off Delay Time
-
502
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
580
-
uJ
Ets
Total Switching Loss
-
1665
-
uJ
td(on)
Turn-On Delay Time
-
21.2
-
ns
tr
Rise Time
-
304
-
ns
td(off)
Turn-Off Delay Time
-
490
-
ns
tf
Fall Time
-
232
-
ns
Eon
Turn-On Switching Loss
-
1310
-
uJ
Eoff
Turn-Off Switching Loss
-
952
-
uJ
VCC = 600V, IC = 25A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 25A,
RG = 10, VGE = 15V,
Resistive Load,, TC = 175oC
-
138
-
ns
-
1085
-
uJ
Ets
Total Switching Loss
-
2262
-
uJ
Qg
Total Gate Charge
-
204
-
nC
Qge
Gate to Emitter Charge
-
15
-
nC
Qgc
Gate to Collector Charge
-
103
-
nC
VCE = 600V, IC = 25A,
VGE = 15V
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2
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
200
o
Figure 2. Typical Output Characteristics
200
20V
TC = 25 C
VGE=17V
Collector Current, IC [A]
Collector Current, Ic [A]
160
20V
o
TC = 175 C
15V
12V
120
80
10V
9V
40
17V
160
15V
120
12V
80
10V
VGE = 7V
40
9V
8V
8V
7V
0
0.0
2.0
4.0
6.0
8.0
Collector-Emitter Voltage, VCE [V]
0
0.0
10.0
Figure 3. Typical Saturation Voltage
Characteristics
100
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
160
o
Collector Current, IC [A]
Collector Current, IC [A]
10.0
Figure 4. Transfer Characteristics
200
TC = 25 C
o
TC = 175 C ---
120
80
o
80
TC = 25 C
o
TC = 175 C
60
40
20
40
0
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
0
6.0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
3.0
50A
2.5
2.0
25A
1.5
1.0
25
IC = 12.5A
50
3
6
9
12
Gate-Emitter Voltage,VGE [V]
75
100
125
150
o
Case Temperature, TC [ C]
15
Figure 6. Saturation Voltage vs. VGE
3.5
Collector-Emitter Voltage, VCE [V]
2.0
4.0
6.0
8.0
Collector-Emitter Voltage, VCE [V]
o
TC = 25 C
15
10
25A
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3
IC = 12.5A
5
0
175
Common Emitter
4
50A
8
12
16
Gate-Emitter Voltage, VGE [V]
20
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
5000
20
Common Emitter
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 175 C
12
IC = 25A
8
50A
12.5A
1000
100
Coes
Common Emitter
VGE = 0V, f = 1MHz
4
Cres
o
TC = 25 C
10
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
1
20
Figure 9. Gate charge Characteristics
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
100
15
Common Emitter
10s
o
TC = 25 C
12
VCC = 200V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
30
600V
400V
9
6
3
100s
10
1ms
10ms
DC
1
*Notes:
0.1
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0.01
0
0
30
60
90
120 150
Gate Charge, Qg [nC]
180
1
210
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
10000
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
Switching Time [ns]
Switching Time [ns]
td(off)
td(off)
1000
tf
100
o
o
TC = 25 C
TC = 25 C
o
o
10
10
TC = 175 C
TC = 175 C
20
30
40
50
Gate Resistance, RG []
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
60
70
10
10
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4
20
30
40
50
Gate Resistance, RG []
60
70
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
1000
td(off)
Switching Time [ns]
Switching Time [ns]
tr
100
td(on)
10
Common Emitter
VGE = 15V, RG = 10
tf
Common Emitter
VGE = 15V, RG = 10
100
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
1
10
20
30
TC = 175 C
40
40
10
50
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
10000
Switching Loss [uJ]
Eon
Switching Loss [uJ]
50
Figure 16. Switching Loss vs.
Collector Current
5000
1000
Eoff
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
Eon
1000
Eoff
TC = 25 C
o
o
TC = 175 C
TC = 175 C
100
10
20
30
40
50
Gate Resistance, RG []
Common Emitter
VGE = 15V, RG = 10
o
o
TC = 25 C
60
100
10
70
Figure 17. Turn off Switching
SOA Characteristics
20
30
40
Collector Current, IC [A]
50
Figure 18. Forward Characteristics
100
100
Forward Current, IF [A]
Collector Current, IC [A]
20
30
40
Collector Current, IC [A]
10
10
1
o
TC = 25 C
Safe Operating Area
o
o
VGE = 15V, TC = 175 C
TC = 175 C
0.1
1
1
0
10
100
1000
Collector-Emitter Voltage, VCE [V]
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5
1
2
3
Forward Voltage, VF [V]
4
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 19. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.7
0.5
0.2
0.1
PDM
0.1
0.06
1E-5
0.05
0.02
0.01
single pulse
1E-4
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
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6
10
100
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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