FGA25S125P

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven. • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven C G TO-3PN E G CE Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) IF PD FGA25S125P-SN00337 Unit 1250 V  25 V Collector Current @ TC = 25oC 50 A Collector Current @ TC = 100oC 25 A 75 A Pulsed Collector Current o Diode Continuous Forward Current @ TC = 25 C 50 A Diode Continuous Forward Current @ TC = 100oC 25 A W o Maximum Power Dissipation @ TC = 25 C 250 Maximum Power Dissipation @ TC = 100oC 125 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds C oC 300 Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max Typ. Max. - 0.6 o C/W 40 o C/W - Unit Notes: 1: Limited by Tjmax ©2012 Semiconductor Components Industries, LLC. October-2017,Rev. 2 Publication Order Number: FGA25S125P/D FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P Device Marking Device Package Reel Size Tape Width Quantity FGA25S125P FGA25S125P -SN00337 TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1250 - - V - 1.2 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = 1250V, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±500 nA IC = 25mA, VCE = VGE VGE = 0 V, IC = 1mA On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage 4.5 6.0 7.5 V IC = 25A, VGE = 15V TC = 25oC - 1.8 2.35 V IC = 25A, VGE = 15V TC = 125oC - 2.05 - V IC = 25A, VGE = 15V, TC = 175oC - 2.16 - V IF = 25A, TC = 25oC - 1.7 2.4 V 175oC - 2.1 - V - 2150 - pF VCE = 30V, VGE = 0V, f = 1MHz - 48 - pF - 36 - pF - 24 - ns IF = 25A, TC = Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 250 - ns td(off) Turn-Off Delay Time - 502 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 580 - uJ Ets Total Switching Loss - 1665 - uJ td(on) Turn-On Delay Time - 21.2 - ns tr Rise Time - 304 - ns td(off) Turn-Off Delay Time - 490 - ns tf Fall Time - 232 - ns Eon Turn-On Switching Loss - 1310 - uJ Eoff Turn-Off Switching Loss - 952 - uJ VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Resistive Load,, TC = 175oC - 138 - ns - 1085 - uJ Ets Total Switching Loss - 2262 - uJ Qg Total Gate Charge - 204 - nC Qge Gate to Emitter Charge - 15 - nC Qgc Gate to Collector Charge - 103 - nC VCE = 600V, IC = 25A, VGE = 15V www.onsemi.com 2 FGA25S125P — 1250 V, 25 A Shorted-anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 200 o Figure 2. Typical Output Characteristics 200 20V TC = 25 C VGE=17V Collector Current, IC [A] Collector Current, Ic [A] 160 20V o TC = 175 C 15V 12V 120 80 10V 9V 40 17V 160 15V 120 12V 80 10V VGE = 7V 40 9V 8V 8V 7V 0 0.0 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 0 0.0 10.0 Figure 3. Typical Saturation Voltage Characteristics 100 Common Emitter VCE = 20V Common Emitter VGE = 15V 160 o Collector Current, IC [A] Collector Current, IC [A] 10.0 Figure 4. Transfer Characteristics 200 TC = 25 C o TC = 175 C --- 120 80 o 80 TC = 25 C o TC = 175 C 60 40 20 40 0 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] 0 6.0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3.0 50A 2.5 2.0 25A 1.5 1.0 25 IC = 12.5A 50 3 6 9 12 Gate-Emitter Voltage,VGE [V] 75 100 125 150 o Case Temperature, TC [ C] 15 Figure 6. Saturation Voltage vs. VGE 3.5 Collector-Emitter Voltage, VCE [V] 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] o TC = 25 C 15 10 25A www.onsemi.com 3 IC = 12.5A 5 0 175 Common Emitter 4 50A 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGA25S125P — 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 5000 20 Common Emitter Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 175 C 12 IC = 25A 8 50A 12.5A 1000 100 Coes Common Emitter VGE = 0V, f = 1MHz 4 Cres o TC = 25 C 10 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 100 15 Common Emitter 10s o TC = 25 C 12 VCC = 200V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 600V 400V 9 6 3 100s 10 1ms 10ms DC 1 *Notes: 0.1 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 0 0 30 60 90 120 150 Gate Charge, Qg [nC] 180 1 210 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 10000 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 25A Switching Time [ns] Switching Time [ns] td(off) td(off) 1000 tf 100 o o TC = 25 C TC = 25 C o o 10 10 TC = 175 C TC = 175 C 20 30 40 50 Gate Resistance, RG [] Common Emitter VCC = 600V, VGE = 15V IC = 25A 60 70 10 10 www.onsemi.com 4 20 30 40 50 Gate Resistance, RG [] 60 70 FGA25S125P — 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 1000 td(off) Switching Time [ns] Switching Time [ns] tr 100 td(on) 10 Common Emitter VGE = 15V, RG = 10 tf Common Emitter VGE = 15V, RG = 10 100 o o TC = 25 C TC = 25 C o o TC = 175 C 1 10 20 30 TC = 175 C 40 40 10 50 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 10000 Switching Loss [uJ] Eon Switching Loss [uJ] 50 Figure 16. Switching Loss vs. Collector Current 5000 1000 Eoff Common Emitter VCC = 600V, VGE = 15V IC = 25A Eon 1000 Eoff TC = 25 C o o TC = 175 C TC = 175 C 100 10 20 30 40 50 Gate Resistance, RG [] Common Emitter VGE = 15V, RG = 10 o o TC = 25 C 60 100 10 70 Figure 17. Turn off Switching SOA Characteristics 20 30 40 Collector Current, IC [A] 50 Figure 18. Forward Characteristics 100 100 Forward Current, IF [A] Collector Current, IC [A] 20 30 40 Collector Current, IC [A] 10 10 1 o TC = 25 C Safe Operating Area o o VGE = 15V, TC = 175 C TC = 175 C 0.1 1 1 0 10 100 1000 Collector-Emitter Voltage, VCE [V] www.onsemi.com 5 1 2 3 Forward Voltage, VF [V] 4 FGA25S125P — 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics Figure 19. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.7 0.5 0.2 0.1 PDM 0.1 0.06 1E-5 0.05 0.02 0.01 single pulse 1E-4 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] www.onsemi.com 6 10 100 FGA25S125P — 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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