FGA3060ADF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA3060ADF 600 V, 30 A Field Stop Trench IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Vce(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability. • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution Applications • RoHS Compliant • PFC topology for Home appliance : Single Boost , Multi channel Interleaved etc. C G G C TO-3PN E E Absolute Maximum Ratings Symbol VCES VGES IC Description FGA3060ADF Unit Collector to Emitter Voltage 600 V Gate to Emitter Voltage  20 V  30 V Collector Current @ TC = 25oC 60 A o Transient Gate to Emitter Voltage Collector Current @ TC = 100 C 30 A ILM (1) Pulsed Collector Current @ TC = 25oC 90 A ICM (2) Pulsed Collector Current 90 A 3 A 1.5 A 6 A W IF (3) IFM (2) PD Diode Forward Current @ TC = 25oC Diode Forward Current o @ TC = 100 C Pulsed Diode Maximum Forward Current o Maximum Power Dissipation @ TC = 25 C 176 Maximum Power Dissipation @ TC = 100oC 88 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 120  Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. The purpose of diode is protection for negative voltage. ©2015 Fairchild Semiconductor Corporation FGA3060ADF Rev. 1.0 1 www.fairchildsemi.com FGA3060ADF — 600 V, 30 A Field Stop Trench IGBT July 2015 Symbol Parameter FGA3060ADF Unit o RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.85 RJC(Diode) Thermal Resistance, Junction to Case, Max. 5 oC/W C/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGA3060ADF FGA3060ADF TO-3PN Tube - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - 0.52 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 30 mA, VCE = VGE IC = 1 mA, Reference to 25oC On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.1 5.6 7.6 V IC = 30 A, VGE = 15 V - 1.8 2.3 V IC = 30 A, VGE = 15 V, TC = 175oC - 2.4 - V - 1072 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 36 - pF - 13 - pF - 12 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 19.2 - ns td(off) Turn-Off Delay Time - 42.4 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 165 - uJ Ets Total Switching Loss - 1125 - uJ td(on) Turn-On Delay Time - 12.8 - ns tr Rise Time - 27.2 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss ©2015 Fairchild Semiconductor Corporation FGA3060ADF Rev. 1.0 VCC = 400 V, IC = 30 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 30 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 - 7.2 - ns - 960 - uJ - 46.4 - ns - 12.8 - ns - 1430 - uJ - 310 - uJ - 1740 - uJ www.fairchildsemi.com FGA3060ADF — 600 V, 30 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 30 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2015 Fairchild Semiconductor Corporation FGA3060ADF Rev. 1.0 (Continued) Min. Typ. Max Unit - 37.4 - nC - 7.2 - nC - 15 - nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 3 A Min. Typ. Max TC = 25oC - 1.6 2.3 TC = 175oC - 1.4 - TC = 175oC - 29.7 - 25oC T = IF = 3 A, dIF/dt = 200 A/s, C o T VR = 400 V C = 175 C 3 - 26 - - 153 - TC = 25oC - 35 - TC = 175oC - 305 - V uJ ns nC www.fairchildsemi.com FGA3060ADF — 600 V, 30 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 90 o TC = 25 C 10V 60 45 VGE = 8V 45 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 Common Emitter VGE = 15V o TC = 25 C o TC = 175 C 60 45 30 15 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Common Emitter VGE = 15V 3 60A 30A 2 IC = 15A Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o o Collector-Emitter Voltage, VCE [V] TC = 25 C 16 12 IC = 15A 8 30A 60A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2015 Fairchild Semiconductor Corporation FGA3060ADF Rev. 1.0 6 1 -100 -50 0 50 100 150 200 o Collector-Emitter Case Temperature, TC [ C] Figure 5. Saturation Voltage vs. VGE 20 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 0 4 75 Collector-Emitter Voltage, VCE [V] VGE = 8V 30 90 0 10V 15 Figure 3. Typical Saturation Voltage Characteristics 0 12V 60 15 0 15V 75 12V 30 20V o TC = 175 C Collector Current, IC [A] Collector Current, IC [A] 90 20V 15V 75 Figure 2. Typical Output Characteristics TC = 175 C 16 12 30A 8 IC = 15A 4 0 20 4 60A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA3060ADF — 600 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] Capacitance [pF] o Cies 1000 100 Coes Common Emitter VGE = 0V, f = 1MHz o 300V 9 10 Collector-Emitter Voltage, VCE [V] 3 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 8 16 24 Gate Charge, Qg [nC] 40 1000 tr td(on) 10 td(off) Switching Time [ns] Switching Time [ns] 32 Figure 10. Turn-off Characteristics vs. Gate Resistance 100 Common Emitter VCC = 400V, VGE = 15V IC = 30A 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 30A 10 o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 5 400V 6 0 1 VCC = 200V Cres TC = 25 C 10 TC = 25 C 12 0 10 20 30 40 50 60 Gate Resistance, RG [] 70 1 80 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 40 50 60 Gate Resistance, RG [] 70 80 Figure 12. Turn-on Characteristics vs. Collector Current 300 5000 Switching Time [ns] Switching Loss [uJ] 100 Eon 1000 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 30A 10 td(on) Common Emitter VGE = 15V, RG = 6 o o TC = 25 C TC = 25 C 100 o o TC = 175 C TC = 175 C 50 tr 0 10 20 30 40 50 60 Gate Resistance, RG [] ©2015 Fairchild Semiconductor Corporation FGA3060ADF Rev. 1.0 1 70 80 0 15 30 45 60 75 90 Collector Current, IC [A] 5 www.fairchildsemi.com FGA3060ADF — 600 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 10000 300 Eon 100 10 Switching Loss [uJ] Switching Time [ns] td(off) tf Common Emitter VGE = 15V, RG = 6 1000 Eoff 100 Common Emitter VGE = 15V, RG = 6 o TC = 25 C o TC = 25 C o TC = 175 C o 1 TC = 175 C 0 15 30 45 60 Collector Current, IC [A] 10 75 0 90 15 30 45 60 75 90 Collector Current, IC [A] Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics 100 150 Square Wave o 10s VGE = 15/0V, RG = 6 Collector Current, Ic [A] Collector Current, [A] TJ