FGA30N60LSDTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor. • High Input Impedance • Low Conduction Loss Applications • Solar Inverter, UPS C G E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage  20 V IC Collector Current @ TC = 25C 60 A Collector Current @ TC = 100C 30 A ICM (1) Pulsed Collector Current 90 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 150 A PD Maximum Power Dissipation @ TC = 25C 480 W Maximum Power Dissipation @ TC = 100C 192 W TJ Operating Junction Temperature -55 to +150 C Tstg Storage Temperature Range -55 to +150 C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.26 C/W RJC(Diode) Thermal Resistance, Junction-to-Case -- 0.92 C/W RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev.C1 1 www.fairchildsemi.com FGA30N60LSD — 600 V, 30 A PT IGBT November 2013 Part Number Top Mark FGA30N60LSDTU FGA30N60LSD Package Packing Method TO-3P Parameter Tape Width Quantity N/A N/A 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 -- -- V -- 0.6 -- V/C Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA BVCES/ TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ±250 nA 4.0 5.5 7.0 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250 uA, VCE = VGE IC = 30 A, VGE = 15 V -- 1.1 1.4 V VCE(sat) Collector to Emitter Saturation Voltage IC = 30 A, VGE = 15 V, TC = 125C -- 1.0 -- V IC = 60 A, VGE = 15 V -- 1.3 -- V -- 3550 -- pF VCE = 30 V, VGE = 0 V, f = 1 MHz -- 245 -- pF -- 90 -- pF 18 -- ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time -- tr Rise Time -- 46 -- ns td(off) Turn-Off Delay Time -- 250 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff td(on) VCC = 400 V, IC = 30 A, RG = 6.8 , VGE = 15 V, Inductive Load, TC = 25C -- 1.3 2.0 us -- 1.1 -- mJ Turn-Off Switching Loss -- 21 -- mJ Turn-On Delay Time -- 17 -- ns tr Rise Time -- 45 -- ns td(off) Turn-Off Delay Time -- 270 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge Le Internal Emitter Inductance ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev.C1 VCC = 400 V, IC = 30 A, RG =6.8 , VGE = 15 V, Inductive Load, TC = 125C VCE = 300 V, IC = 30 A, VGE = 15 V Measured 5mm from PKG 2 -- 2.6 -- us -- 1.1 -- mJ -- 36 -- mJ -- 225 -- nC -- 30 -- nC -- 105 -- nC -- 7 -- nH www.fairchildsemi.com 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT Package Marking and Ordering Information Parameter TC = 25°C unless otherwise noted Min. Typ. Max Unit VFM IF = 15 A IF = 15 A Conditions TC = 25 C TC = 125 C - 1.8 1.6 2.2 - V V IRM VR = 600 V TC = 25 C - - 100 A trr IF =1 A, diF/dt = 100 A/s, VR = 30 V IF =15 A, diF/dt = 100 A/s, VR = 390 V TC = 25 C TC = 25 C - - 35 40 ns ns ta tb Qrr IF =15 A, diF/dt = 100 A/s, VR = 390 V TC = 25 C TC = 25 C TC = 25 C - 18 13 27.5 - ns ns nC ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev.C1 3 www.fairchildsemi.com 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT Electrical Characteristics of the Diode Figure 1.Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics 90 90 o 60 30 15V 12V 10V 8V 60 30 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 Figure 3. Typical Saturation Voltage Characteritics 4 90 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 125 C 60 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 1 2 3 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer characteristics 90 o TC = 125 C 60 30 30 0 0 0 1 2 Collector-Emitter Voltage, VCE [V] 0 3 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1.2 30A IC = 15A 0.8 FGA30N60LSD Rev.C1 o T = 25 C C 16 12 8 4 60A 30A IC = 15A 0 50 75 100 o Case Temperature, TC [ C] ©2008 Fairchild Semiconductor Corporation 12 Common Emitter 60A 0.6 25 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 1.0 2 Figure 6. Saturation Voltage vs. Vge 1.4 Collector-Emitter Voltage, VCE [V] VGE = 20V TC = 125 C 15V 12V 10V 8V Collector Current, IC [A] Collector Current, IC [A] o VGE = 20V TC = 25 C 0 125 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage vs. Vge 20 Figure 8. Capacitance characteristics 13000 10000 Common Emitter TC = 125 C Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o 12 8 30A 60A TC = 25 C Cres 4 IC = 15A 100 50 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 Figure 9. Gate Charge Characteristics 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteeristics 300 15 Common Emitter IC = 30A o 12 TC = 25 C Ic MAX (Pulsed) 100 Vcc = 100V 9 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o 1000 0 300V 200V 6 3 0 0 50 100 150 200 Gate Charge, Qg [nC] 50s Ic MAX (Continuous) 1ms 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature DC Operation 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-On Characteristics vs. Gate Resistance 80 200 Vcc = 400V 70 load Current : peak of square wave 100 Switching Time [ns] 60 50 40 30 tr Common Emitter VCC = 400V, VGE = 15V IC = 30A td(on) 20 o TC = 25 C Duty cycle : 50% 10 100s 10 0.1 0.1 250 Figure 11. Load Current Vs. Frequency Collector Current [A] Common Emitter VGE = 0V, f = 1MHz Coes o TC = 125 C o Tc = 100 C 10 Powe Dissipation = 192W 0 0.1 1 10 100 Frequency, f [kHz] ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev.C1 0 10 20 30 40 50 Gate Resistance, RG [] 1000 5 www.fairchildsemi.com 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-Off Characteristics vs. Gate Resistance Figure 14. Turn-On Characteristics vs. Collector Current 500 3000 Common Emitter VGE = 15V, RG = 6.8 o TC = 25 C Switching Time [ns] Switching Time [ns] o tf 1000 Common Emitter VCC = 400V, VGE = 15V IC = 30A td(off) TC = 125 C 100 tr td(on) 10 o TC = 25 C o TC = 125 C 100 0 10 20 30 40 20 50 30 40 Gate Resistance, RG [] Figure 15. Turn-Off Characteristics vs. Collector Current 60 70 80 Figure 16. Switching Loss vs Gate Resistance 6000 500 Common Emitter VCC = 400V, VGE = 15V IC = 30A Switching Loss [mJ] tf Switching Time [ns] 50 Collector Current, IC [A] 1000 Common Emitter VGE = 15V, RG = 6.8 o TC = 25 C o td(off) TC = 125 C o 100 TC = 25 C o Eoff TC = 125 C 10 Eon 100 20 30 40 50 60 70 1 80 Collector Current, IC [A] 5 10 15 20 25 30 35 40 45 50 Gate Resistance, RG [] Figure 17.Switching Loss vs Collector Current Figure 18. Turn-Off Switching SOA Characteristics 200 100 100 Collector Current, IC [A] Switching Loss [mJ] Eoff 10 Eon 1 Common Emitter VGE = 15V, RG = 6.8 10 o TC = 25 C Safe Operating Area o VGE = 15V, TC = 125 C o TC = 125 C 0.1 10 1 20 30 40 50 60 70 80 1 Collector Current, IC [A] ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev.C1 6 10 100 1000 Collector-Emitter Voltage, VCE [V] www.fairchildsemi.com 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT Typical Performance Characteristics 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT Figure 19. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.01 0.02 PDM t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 20. Forward Voltage Drop 10 Figure 21. Reverse Current 1E-4 REVERSE CURRENT, IR [A] 100 FORWARD CURRENT, IF [A] 1 10 o TC=125 C 1 o TC=75 C 1E-5 o TC = 125 C o 1E-6 TC = 75 C 1E-7 o TC = 25 C 1E-8 o TC=25 C 0.1 0.0 1E-9 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 100 200 300 400 500 600 REVERSE VOLTAGE, VR [V] FORWARD VOLTAGE, VF [V] REVERSE RECOVERY TIME, trr [ns] Figure 22. Reverse Recovery Time 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 IF = 15A o TC = 125 C o TC = 75 C o TC = 25 C 200 300 400 500 diF/dt [A/s] ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev.C1 7 www.fairchildsemi.com 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT Mechanical Dimensions Figure 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003 ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev.C1 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation FGA30N60LSD Rev.C1 9 www.fairchildsemi.com 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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