FGA30T65SHD

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Features • • • • • • • • • General Description =175oC Maximum Junction Temperature : TJ Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 30 A 100% of the Parts Tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC C G G C TO-3PN E E Absolute Maximum Ratings Symbol VCES VGES IC TC = 25°C unless otherwise noted Description FGA30T65SHD Unit Collector to Emitter Voltage 650 V Gate to Emitter Voltage  20 V  30 V 60 A 30 A 90 A 90 A 40 A Transient Gate to Emitter Voltage Collector Current @ TC = 25oC 100oC Collector Current @ TC = ILM (1) Pulsed Collector Current @ TC = 25oC ICM (2) Pulsed Collector Current IF IFM (2) PD Diode Forward Current Diode Forward Current @ TC = 25oC @ TC = 100oC Pulsed Diode Maximum Forward Current 20 A 90 A W Maximum Power Dissipation @ TC = 25oC 238 Maximum Power Dissipation @ TC = 100oC 119 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1. VCC = 400 V, VGE = 15 V, IC =90 A, RG = 30  Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature ©2014 Fairchild Semiconductor Corporation FGA30T65SHD Rev. C0 1 www.fairchildsemi.com FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT December 2014 Symbol Parameter FGA30T65SHD Unit RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.63 oC/W RJC(Diode) Thermal Resistance, Junction to Case, Max. 1.71 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Part Number Top Mark FGA30T65SHD FGA30T65SHD Package Packaging Method TO-3PN Parameter Tape Width Quantity - - 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - 0.6 - V/oC Off Characteristics BVCES BVCES / TJ Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA Temperature Coefficient of Breakdown IC = 1 mA, Reference to 25oC Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 30 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 5.5 7.5 V IC = 30 A, VGE = 15 V - 1.6 2.1 V IC = 30 A, VGE = 15 V, TC = 175oC - 2.14 - V - 1558 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 64 - pF - 19 - pF 14.4 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 52.8 - ns tf Fall Time - 9.6 - ns Eon Turn-On Switching Loss - 598 - uJ Eoff Turn-Off Switching Loss - 167 - uJ Ets Total Switching Loss - 765 - uJ VCC = 400 V, IC = 30 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC td(on) Turn-On Delay Time - 14.4 - ns tr Rise Time - 19.2 - ns td(off) Turn-Off Delay Time - 59.2 - ns tf Fall Time - 8 - ns Eon Turn-On Switching Loss - 992 - uJ Eoff Turn-Off Switching Loss - 303 - uJ Ets Total Switching Loss - 1295 - uJ ©2014 Fairchild Semiconductor Corporation FGA30T65SHD Rev. C0 VCC = 400 V, IC = 30 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 30 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2014 Fairchild Semiconductor Corporation FGA30T65SHD Rev. C0 (Continued) Min. Typ. Max Unit - 54.7 - nC - 9.6 - nC - 20.3 - nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 20 A IF =20 A, dIF/dt = 200 A/s 3 Min. Typ. Max TC = 25oC - 2.2 2.7 TC = 175oC - 1.94 - TC = 175oC - 50 - TC = 25oC - 31.8 - - 192 - TC = 25oC - 50.6 - TC = 175oC - 699 - TC = 175oC V uJ ns nC www.fairchildsemi.com FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE ©2014 Fairchild Semiconductor Corporation FGA30T65SHD Rev. C0 4 www.fairchildsemi.com FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance ©2014 Fairchild Semiconductor Corporation FGA30T65SHD Rev. C0 Figure 12. Turn-on Characteristics vs. Collector Current 5 www.fairchildsemi.com FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current ©2014 Fairchild Semiconductor Corporation FGA30T65SHD Rev. C0 6 www.fairchildsemi.com FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge Figure 21.Transient Thermal Impedance of IGBT PDM t1 t2 Figure 22.Transient Thermal Impedance of Diode PDM t1 ©2014 Fairchild Semiconductor Corporation FGA30T65SHD Rev. C0 7 t2 www.fairchildsemi.com 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3° 20.10 19.70 16.96 16.56 18.90 18.50 3° 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4° 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 © Fairchild Semiconductor Corporation www.fairchildsemi.com