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FGA4060ADF
600 V, 40 A Field Stop Trench IGBT
Features
General Description
• Maximum Junction Temperature : TJ =
175oC
This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Vce(sat) and much faster
switching characteristics for outstanding efficiency. And this kind
of technology is fully optimized to variety PFC (Power Factor
Correction) topology ; Single boost, Multi channel interleaved
etc with over 20KHz switching performance. TO3P package
provide Super Low thermal resistance for much wider SOA for
system stability.
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
Applications
• RoHS Compliant
• PFC topology for Home appliance : Single Boost , Multi channel Interleaved etc.
C
G
G
C
TO-3PN
E
E
Absolute Maximum Ratings T
C
Symbol
VCES
VGES
= 25°C unless otherwise noted
FGA4060ADF
Unit
Collector to Emitter Voltage
Description
600
V
Gate to Emitter Voltage
20
V
Transient Gate to Emitter Voltage
30
V
Collector Current
@ TC = 25oC
80
A
Collector Current
@ TC = 100oC
40
A
ILM (1)
Pulsed Collector Current
@ TC = 25oC
ICM (2)
Pulsed Collector Current
IC
IF (3)
IFM (2)
PD
120
A
120
A
Diode Forward Current
@ TC = 25oC
3
A
Diode Forward Current
@ TC = 100oC
1.5
A
6
A
Maximum Power Dissipation
@ TC = 25oC
238
W
Maximum Power Dissipation
@ TC = 100oC
Pulsed Diode Maximum Forward Current
119
W
TJ
Operating Junction Temperature
-55 to +175
oC
Tstg
Storage Temperature Range
-55 to +175
o
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
C
oC
Notes:
1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 120 Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. The purpose of diode is protection for negative voltage.
©2015 Fairchild Semiconductor Corporation
FGA4060ADF Rev. 1.0
1
www.fairchildsemi.com
FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT
July 2015
Symbol
Parameter
FGA4060ADF
Unit
o
RJC(IGBT)
Thermal Resistance, Junction to Case, Max.
0.63
RJC(Diode)
Thermal Resistance, Junction to Case, Max.
5
oC/W
C/W
RJA
Thermal Resistance, Junction to Ambient, Max.
40
oC/W
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Qty per Tube
FGA4060ADF
FGA4060ADF
TO-3PN
Tube
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA
BVCES /
TJ
Temperature Coefficient of Breakdown
Voltage
IC = 1 mA, Reference to 25oC
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 40 mA, VCE = VGE
4.1
5.6
7.6
V
IC = 40 A, VGE = 15 V
-
1.8
2.3
V
IC = 40 A, VGE = 15 V,
TC = 175oC
-
2.31
-
V
-
1525
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
-
60
-
pF
-
20
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
16.8
-
ns
tr
Rise Time
-
34.4
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
-
54.4
-
ns
-
10
-
ns
-
1.37
-
mJ
-
0.25
-
mJ
Ets
Total Switching Loss
-
1.62
-
mJ
td(on)
Turn-On Delay Time
-
16
-
ns
tr
Rise Time
-
35.2
-
ns
td(off)
Turn-Off Delay Time
-
57.6
-
ns
tf
Fall Time
-
12.8
-
ns
Eon
Turn-On Switching Loss
-
1.89
-
mJ
Eoff
Turn-Off Switching Loss
-
0.47
-
mJ
Ets
Total Switching Loss
-
2.36
-
mJ
©2015 Fairchild Semiconductor Corporation
FGA4060ADF Rev. 1.0
VCC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
2
www.fairchildsemi.com
FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT
Thermal Characteristics
Symbol
Parameter
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
Test Conditions
VCE = 400 V, IC = 40 A,
VGE = 15 V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
©2015 Fairchild Semiconductor Corporation
FGA4060ADF Rev. 1.0
(Continued)
Min.
Typ.
Max
Unit
-
55.5
-
nC
-
9.8
-
nC
-
21
-
nC
Unit
TC = 25°C unless otherwise noted
Test Conditions
IF = 3 A
IF = 3 A, dIF/dt = 200 A/s
3
Min.
Typ.
Max
TC = 25oC
-
1.6
2.3
TC = 175oC
-
1.4
-
TC = 175oC
-
29.7
-
TC =
25oC
-
26
-
TC = 175oC
-
153
-
TC = 25oC
-
35
-
TC = 175oC
-
305
-
V
uJ
ns
nC
www.fairchildsemi.com
FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
120
Figure 2. Typical Output Characteristics
120
20V
o
TC = 25 C
20V
o
TC = 175 C
15V
Collector Current, IC [A]
12V
Collector Current, IC [A]
90
15V
12V
10V
60
VGE = 8V
30
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
90
60
0
0
4
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
o
TC = 25 C
90
1
2
3
4
Collector-Emitter Voltage, VCE [V]
5
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
120
Collector Current, IC [A]
VGE = 8V
30
5
Figure 3. Typical Saturation Voltage
Characteristics
10V
o
TC = 175 C
60
30
Common Emitter
VGE = 15V
3
80A
2
40A
IC = 20A
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
1
-50
5
Figure 5. Saturation Voltage vs. VGE
20
Common Emitter
Common Emitter
o
o
TC = 25 C
16
12
IC = 20A
8
40A
80A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
©2015 Fairchild Semiconductor Corporation
FGA4060ADF Rev. 1.0
150
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
0
50
100
o
Case Temperature, TC [ C]
TC = 175 C
16
12
40A
8
IC = 20A
0
20
4
80A
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
10000
15
Common Emitter
Gate-Emitter Voltage, VGE [V]
o
Capacitance [pF]
Cies
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
Cres
TC = 25 C
12
300V
VCC = 200V
9
400V
6
3
o
TC = 25 C
10
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 9. Turn-on Characteristics vs.
Gate Resistance
10
20
30
40
Gate Charge, Qg [nC]
60
1000
td(on)
10
td(off)
Switching Time [ns]
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
10
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
TC = 175 C
5
50
Figure 10. Turn-off Characteristics vs.
Gate Resistance
100
Switching Time [ns]
0
0
10
20
30
40
Gate Resistance, RG []
4
50
Figure 11. Switching Loss vs.
Gate Resistance
0
10
20
30
Gate Resistance, RG []
40
50
Figure 12. Turn-on Characteristics vs.
Collector Current
150
3
100
tr
Switching Time [ns]
Switching Loss [mJ]
Eon
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
td(on)
Common Emitter
VGE = 15V, RG = 6
10
o
TC = 25 C
o
TC = 25 C
o
o
TC = 175 C
TC = 175 C
0.1
0
10
20
30
40
Gate Resistance, RG []
©2015 Fairchild Semiconductor Corporation
FGA4060ADF Rev. 1.0
5
20
50
30
40
50
60
70
80
Collector Current, IC [A]
5
www.fairchildsemi.com
FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
10
100
td(off)
Switching Loss [mJ]
Switching Time [ns]
Eon
tf
Common Emitter
VGE = 15V, RG = 6
10
1
Eoff
Common Emitter
VGE = 15V, RG = 6
o
o
TC = 25 C
TC = 25 C
0.1
o
TC = 175 C
o
TC = 175 C
4
20
30
40
50
60
Collector Current, IC [A]
70
0.05
20
80
30
40
50
60
70
80
Collector Current, IC [A]
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristics
200
200
100
Square Wave
o
10s
VGE = 15/0V, RG = 6
Collector Current, Ic [A]
Collector Current, [A]
TJ