FGA40T65UQDF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA40T65UQDF 650 V, 40 A Field Stop Trench IGBT Features • • • • • • • • • General Description Maximum Junction Temperature: TJ = 175oC Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ.) @ IC = 40 A 100% of the Parts tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. Applications • Induction Heating, MWO C G G C TO-3PN E E Absolute Maximum Ratings Symbol Description FGA40T65UQDF Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage  20 V Transient Gate to Emitter Voltage 30 V 80 A 40 A IC Collector Current @ TC = Collector Current @ TC = 100oC ILM (1) Pulsed Collector Current ICM (2) Pulsed Collector Current IF IFM PD 25oC @ TC = 25oC 120 A 120 A Diode Forward Current @ TC = 25oC 40 A Diode Forward Current @ TC = 100oC 20 A 60 A Maximum Power Dissipation @ TC = 25oC 231 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current 115 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 , Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 1 www.fairchildsemi.com FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT May 2016 FGA40T65UQDF Unit RJC (IGBT) Symbol Thermal Resistance, Junction to Case, Max. Parameter 0.65 oC/W RJC (Diode) Thermal Resistance, Junction to Case, Max. 1.75 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Qty per Tube FGA40T65UQDF FGA40T65UQDF TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES / TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1mA - 0.52 ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA IC = 40 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 2.5 4.0 5.5 V IC = 40 A, VGE = 15 V - 1.33 1.67 V IC = 40 A, VGE = 15 V, TC = 175oC - 1.5 - V - 7309 - pF VCE = 30 V, VGE = 0 V, f = 1 MHz - 58 - pF - 30 - pF 32 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics Td(on) Turn-On Delay Time - Tr Rise Time - 18 - ns Td(off) Turn-Off Delay Time - 271 - ns Tf Fall Time - 11 - ns Eon Turn-On Switching Loss - 989 - J VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC Eoff Turn-Off Switching Loss - 310 - J Ets Total Switching Loss - 1299 - J Td(on) Turn-On Delay Time - 30 - ns Tr Rise Time - 22 - ns Td(off) Turn-Off Delay Time - 298 - ns Tf Fall Time - 16 - ns Eon Turn-On Switching Loss - 1400 - J Eoff Turn-Off Switching Loss - 553 - J Ets Total Switching Loss - 1953 - J ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 40 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy Trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 (Continued) Min. Typ. Max. Unit - 306 - nC - 30 - nC - 77 - nC TC = 25°C unless otherwise noted Test Conditions IF = 20 A IF = 20 A, dIF/dt = 200 A/s 3 Min. Typ. Max. TC = 25oC - 1.5 1.95 TC = 175oC - 1.39 - TC = 175oC - 115 - TC = 25oC TC = 175oC - 89 - - 251 - TC = 25oC - 289 - TC = 175oC - 1502 - Unit V J ns nC www.fairchildsemi.com FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 4 www.fairchildsemi.com FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 Figure 12. Turn-on Characteristics vs. Collector Current 5 www.fairchildsemi.com FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 6 www.fairchildsemi.com FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge Figure 21.Transient Thermal Impedance of IGBT PDM t1 t2 Figure 22.Transient Thermal Impedance of Diode PDM t1 ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 7 t2 www.fairchildsemi.com FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT Mechanical Dimensions Figure 23. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 8 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm Power Supply WebDesigner™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* SerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ ԉㄕ ® *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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I77 ©2016 Fairchild Semiconductor Corporation FGA40T65UQDF Rev. 1.0 9 www.fairchildsemi.com FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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