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FGA5065ADF
650 V, 50 A Field Stop Trench IGBT
Features
General Description
• Maximum Junction Temperature : TJ =
175oC
This ADF IGBT series adopted field stop trench 3rd generation
IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency. And this kind of
technology is fully optimized to variety PFC (Power Factor Correction) topology; Single Boost, Multi Channel Interleaved etc
with over 20KHz switching performance. TO3P package provide
super low thermal resistance for much wider SOA for system
stability.
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
Applications
• RoHS Compliant
• PFC topology for home applicnce: Single Boost, Multi Channel Interleaved etc.
C
G
G
C
TO-3PN
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
FGA5065ADF
Unit
Collector to Emitter Voltage
650
V
Gate to Emitter Voltage
20
V
Transient Gate to Emitter Voltage
30
V
100
A
50
A
Collector Current
@ TC =
@ TC = 100oC
Pulsed Collector Current
Pulsed Collector Current
PD
25oC
Collector Current
ICM (2)
IFM (2)
TC = 25°C unless otherwise noted
Description
ILM (1)
IF (3)
E
o
@ TC = 25 C
150
A
150
A
Diode Forward Current
@ TC = 25oC
40
A
Diode Forward Current
@ TC = 100oC
20
A
120
A
Maximum Power Dissipation
@ TC = 25oC
268
W
Maximum Power Dissipation
@ TC = 100oC
Pulsed Diode Maximum Forward Current
134
W
TJ
Operating Junction Temperature
-55 to +175
oC
Tstg
Storage Temperature Range
-55 to +175
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Notes:
1. VCC = 400 V, VGE = 15 V, IC =150 A, RG = 55.9 Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. The purpose of diode is protection for negative voltage.
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
1
www.fairchildsemi.com
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
August 2015
Symbol
Parameter
FGA5065ADF
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case, Max.
0.56
o
RJC(Diode)
Thermal Resistance, Junction to Case, Max.
1.71
oC/W
RJA
Thermal Resistance, Junction to Ambient, Max.
40
oC/W
C/W
Package Marking and Ordering Information
Part Number
Top Mark
FGA5065ADF
FGA5065ADF
Package Packaging Method
TO-3PN
Parameter
Tape Width
Quantity
-
-
30
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
650
-
-
V
-
0.58
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA
BVCES /
TJ
Temperature Coefficient of Breakdown
Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 50 mA, VCE = VGE
IC = 1 mA, Reference to 25oC
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
4.1
5.6
7.6
V
IC = 50 A, VGE = 15 V
-
1.7
2.2
V
IC = 50 A, VGE = 15 V,
TC = 175oC
-
2.28
-
V
-
1995
-
pF
VCE = 30 V, VGE = 0 V,
f = 1MHz
-
70
-
pF
-
23
-
pF
-
20.8
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
41.6
-
ns
td(off)
Turn-Off Delay Time
-
62.4
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
309
-
uJ
Ets
Total Switching Loss
-
1659
-
uJ
td(on)
Turn-On Delay Time
-
19.2
-
ns
tr
Rise Time
-
38.4
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
VCC = 400 V, IC = 50 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 50 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
2
-
11.2
-
ns
-
1350
-
uJ
-
67.2
-
ns
-
12.8
-
ns
-
1820
-
uJ
-
558
-
uJ
-
2378
-
uJ
www.fairchildsemi.com
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
Thermal Characteristics
Symbol
Parameter
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
Test Conditions
VCE = 400 V, IC = 50 A,
VGE = 15 V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
(Continued)
Min.
Typ.
Max
Unit
-
72.2
-
nC
-
13.5
-
nC
-
28.5
-
nC
Unit
TC = 25°C unless otherwise noted
Test Conditions
IF = 20 A
IF =20 A, dIF/dt = 200 A/s
3
Min.
Typ.
Max
TC = 25oC
-
2.1
2.6
TC = 175oC
-
1.94
-
TC = 175oC
-
50
-
TC =
25oC
-
31.8
-
TC = 175oC
-
192
-
TC = 25oC
-
50.6
-
TC = 175oC
-
699
-
V
uJ
ns
nC
www.fairchildsemi.com
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
120
Collector Current, IC [A]
120
20V
15V
12V
o
TC = 25 C
60
VGE = 8V
30
0
20V
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
12V
90
60
VGE = 8V
30
0
5
10V
15V
10V
90
0
o
TC = 175 C
Collector Current, IC [A]
150
Figure 2. Typical Output Characteristics
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
5
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
150
Collector Current, IC [A]
Common Emitter
VGE = 15V
120
o
TC = 25 C
o
TC = 175 C
90
60
30
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
5
Figure 5. Saturation Voltage vs. VGE
20
20
o
o
TC = 25 C
16
12
IC = 25A
8
50A
100A
4
0
Common Emitter
Common Emitter
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 6. Saturation Voltage vs. VGE
TC = 175 C
16
12
50A
8
IC = 25A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
20
4
100A
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
15
10000
Common Emitter
Gate-Emitter Voltage, VGE [V]
o
Capacitance [pF]
Cies
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
Cres
TC = 25 C
12
300V
VCC = 200V
400V
9
6
3
o
TC = 25 C
10
0
1
10
Collector-Emitter Voltage, VCE [V]
30
Figure 9. Turn-on Characteristics vs.
Gate Resistance
20
40
60
Gate Charge, Qg [nC]
80
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
100
Switching Time [ns]
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
10
td(off)
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
o
10
o
TC = 25 C
8
0
TC = 25 C
o
TC = 175 C
o
TC = 175 C
0
10
20
30
40
Gate Resistance, RG []
4
50
Figure 11. Switching Loss vs.
Gate Resistance
0
10
20
30
Gate Resistance, RG []
40
50
Figure 12. Turn-on Characteristics vs.
Collector Current
500
4
Common Emitter
VGE = 15V, RG = 6
o
TC = 25 C
Switching Time [ns]
Switching Loss [mJ]
Eon
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
o
TC = 175 C
tr
100
td(on)
o
TC = 25 C
o
TC = 175 C
0.1
0
10
20
30
40
Gate Resistance, RG []
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
10
50
0
30
60
90
120
150
Collector Current, IC [A]
5
www.fairchildsemi.com
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
10
200
td(off)
Switching Loss [mJ]
Switching Time [ns]
100
tf
Common Emitter
VGE = 15V, RG = 6
10
Eon
1
Common Emitter
VGE = 15V, RG = 6
Eoff
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
TC = 175 C
4
0
30
0.1
60
90
120
Collector Current, IC [A]
0
150
30
60
90
120
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristics
200
250
Square Wave
100
10s
TJ