FGA6065ADF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA6065ADF 650 V, 60 A Field Stop Trench IGBT Features General Description • Maximum Junction Temperature : TJ = 175 oC This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Rds(on) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability. • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A • 100% of the Parts Tested for ILM (1) • High Input Impedance • Fast Switching • RoHS Compliant Applications • PFC topology for Home appliance : Single Boost , Multi channel Interleaved etc. • PFC Topology for Welder C G G C TO-3PN E E Absolute Maximum Ratings Symbol VCES VGES Description FGA6065ADF Unit Collector to Emitter Voltage 650 V Gate to Emitter Voltage  20 V  30 V 120 A @ TC = 100oC 60 A @ TC = 25oC 180 A 180 A 60 A 30 A 120 A Transient Gate to Emitter Voltage Collector Current @ TC = 25oC Collector Current ILM (1) Pulsed Collector Current ICM (2) Pulsed Collector Current IC IF IFM (2) PD Diode Forward Current @ TC = 25oC Diode Forward Current o @ TC = 100 C Pulsed Diode Maximum Forward Current o Maximum Power Dissipation @ TC = 25 C 306 W Maximum Power Dissipation @ TC = 100oC 153 W TJ Operating Junction Temperature -55 to +175 o C Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1. VCC = 400 V, VGE = 15 V, IC =180 A, RG = 48.4  Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature ©2015 Fairchild Semiconductor Corporation FGA6065ADF Rev. 1.0 1 www.fairchildsemi.com FGA6065ADF — 650 V, 60 A Field Stop Trench IGBT May 2015 Symbol Parameter FGA6065ADF Unit RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.49 o RJC(Diode) Thermal Resistance, Junction to Case, Max. 1.75 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W C/W Package Marking and Ordering Information Part Number Top Mark FGA6065ADF FGA6065ADF Package Packing Method TO-3PN Parameter Tape Width Quantity - - 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - 0.6 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA BVCES / TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 60 mA, VCE = VGE IC = 1 mA, Reference to 25oC On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.1 5.6 7.6 V IC = 60 A, VGE = 15 V - 1.8 2.3 V IC = 60 A, VGE = 15 V, TC = 175oC - 2.3 - V - 2419 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 82 - pF - 31 - pF - 25.6 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 67.2 - ns td(off) Turn-Off Delay Time - 71 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.52 - mJ Ets Total Switching Loss - 2.98 - mJ td(on) Turn-On Delay Time - 22.4 - ns tr Rise Time - 63.2 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss ©2015 Fairchild Semiconductor Corporation FGA6065ADF Rev. 1.0 VCC = 400 V, IC = 60 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 60 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 - 22 - ns - 2.46 - mJ - 77 - ns - 22 - ns - 3.19 - mJ - 0.71 - mJ - 3.90 - mJ www.fairchildsemi.com FGA6065ADF — 650 V, 60 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 60 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2015 Fairchild Semiconductor Corporation FGA6065ADF Rev. 1.0 (Continued) Min. Typ. Max Unit - 84 - nC - 15 - nC - 32 - nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 30 A IF = 30 A, dIF/dt = 200 A/s 3 Min. Typ. Max TC = 25oC - 1.8 2.3 TC = 175oC - 1.7 - TC = 175oC - 233 - TC = 25oC - 110 - TC = 175oC - 271 - TC = 25oC - 400 - TC = 175oC - 1740 - V uJ ns nC www.fairchildsemi.com FGA6065ADF — 650 V, 60 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 180 Figure 2. Typical Output Characteristics 180 20V o TC = 25 C 15V 150 15V Collector Current, IC [A] Collector Current, IC [A] 150 12V 120 90 VGE = 8V 60 12V 10V 120 90 VGE = 8V 60 30 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 3. Typical Saturation Voltage Characteristics 0 4 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V o TC = 25 C 90 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 120 Collector Current, IC [A] 20V o TC = 175 C 10V o TC = 175 C 60 30 Common Emitter VGE = 15V 3 120A 60A 2 IC = 30A 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 1 -50 4 Figure 5. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o o TC = 25 C 16 12 60A IC = 30A 8 120A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2015 Fairchild Semiconductor Corporation FGA6065ADF Rev. 1.0 150 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 0 50 100 o Case Temperature, TC [ C] TC = 175 C 16 12 IC = 30A 4 120A 4 0 20 60A 8 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA6065ADF — 650 V, 60 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Common Emitter o Gate-Emitter Voltage, VGE [V] Capacitance [pF] Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz Cres TC = 25 C 12 VCC = 200V 300V 400V 9 6 3 o TC = 25 C 10 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 15 30 45 60 Gate Charge, Qg [nC] 1000 Switching Time [ns] Switching Time [ns] 100 tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 60A td(off) 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 60A o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 10 0 10 20 30 40 Gate Resistance, RG [] 50 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 Gate Resistance, RG [] 50 400 Eon 1 tr Switching Time [ns] Switching Loss [mJ] 40 Figure 12. Turn-on Characteristics vs. Collector Current 10 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 60A 100 td(on) Common Emitter VGE = 15V, RG = 6 10 o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 0.1 90 Figure 10. Turn-off Characteristics vs. Gate Resistance 200 10 75 0 10 20 30 40 Gate Resistance, RG [] ©2015 Fairchild Semiconductor Corporation FGA6065ADF Rev. 1.0 4 20 50 40 60 80 100 120 140 160 Collector Current, IC [A] 5 www.fairchildsemi.com FGA6065ADF — 650 V, 60 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 500 20 10 100 Switching Loss [mJ] Switching Time [ns] Eon td(off) tf Common Emitter VGE = 15V, RG = 6 10 Eoff 1 Common Emitter VGE = 15V, RG = 6 o o TC = 25 C TC = 25 C o o 4 20 TC = 175 C TC = 175 C 40 60 80 100 120 140 0.1 160 20 40 60 80 100 120 140 160 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics 400 250 Square Wave 100 VGE = 15/0V, RG = 6 150 Collector Current, Ic [A] Collector Current, [A] o TJ