FGA60N65SMD

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA60N65SMD 650 V, 60 A 场截止 IGBT 特性 概述 • 最大结温：TJ = 175°C 飞兆半导体的新型场截止第二代 IGBT 系列产品采用创新型场截 止 IGBT 技术，为光伏逆变器、UPS、焊机、通信电源、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。 • 正温度系数，易于并联运行 • 高电流能力 • 低饱和电压：VCE(sat) = 1.9 V (Typ.) @ IC = 60 A • 快速开关：EOFF = 7.5 µJ/A • 紧密的参数分布 • 符合 RoHS 标准 应用 • 光伏逆变器、 UPS、焊机、 PFC、通信电源、 ESS C G TO-3PN E G CE 绝对最大额定值 符号 VCES VGES IC ICM (1) IF IFM (1) PD 说明 额定值 单位 集电极－发射极间电压 650 V 栅极－发射极间电压 ± 20 V 瞬态栅极－发射极间电压 集电极电流 @ TC = 25°C 集电极电流 @ TC = 100°C 集电极脉冲电流 ° ± 30 V 120 A 60 A 180 A 二极管正向电流 @ TC = 25 C 60 A 二极管正向电流 @ TC = 100°C 30 A 180 A 最大功耗 @ TC = 25°C 600 W 最大功耗 @ TC = 100°C 二极管最大正向脉冲电流 300 W TJ 工作结温 -55 至 +175 °C Tstg 存储温度范围 -55 至 +175 ° TL 用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒 300 ° C C 注意： 1: 重复额定值：脉宽受最大结温限制 ©2011 飞兆半导体公司 FGA60N65SMD Rev. C2 1 www.fairchildsemi.com FGA60N65SMD — 650 V, 60 A 场截止 IGBT 2013 年 12 月 符号 参数 典型值 最大值 单位 RθJC(IGBT) 结点－壳体的热阻 0.25 °C/W RθJC(Diode) 结点－壳体的热阻 1.1 °C/W RθJA 结至环境热阻 40 °C/W 封装标识与定购信息 器件标识 器件 封装 FGA60N65SMD FGA60N65SMD TO-3PN IGBT 电气特性 T C= 卷尺寸 带宽 数量 30 25°C 除非另有说明 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 BVCES 集电极－发射极击穿电压 VGE = 0 V, IC = 250 μA ΔBVCES ΔTJ 击穿温度系数电压 VGE = 0 V, IC = 250 μA ICES 集电极切断电流 VCE = VCES, VGE = 0 V 250 μA IGES G-E 漏电流 VGE = VGES, VCE = 0 V ±400 nA G-E 阈值电压 IC = 250 μA, VCE = VGE 650 V V/°C 0.6 导通特性 VGE(th) VCE(sat) 集电极－发射极间饱和电压 4.5 6.0 V IC = 60 A, VGE = 15 V 3.5 1.9 2.5 V IC = 60 A, VGE = 15 V, TC = 175oC 2.1 V 2915 pF 270 pF pF 动态特性 Cies 输入电容 Coes 输出电容 Cres 反向传输电容 85 td(on) 导通延迟时间 18 VCE = 30 V, VGE = 0 V, f = 1 MHz 开关特性 27 ns tr 上升时间 47 70 ns td(off) 关断延迟时间 104 146 ns tf 下降时间 Eon 导通开关损耗 Eoff Ets td(on) 导通延迟时间 18 ns tr 上升时间 41 ns 115 ns 48 ns VCC = 400 V, IC = 60 A, RG = 3 W, VGE = 15 V, 感性负载， TC = 25°C 50 68 ns 1.54 2.31 mJ 关断开关损耗 0.45 0.60 mJ 总开关损耗 1.99 2.91 mJ td(off) 关断延迟时间 tf 下降时间 Eon 导通开关损耗 2.08 mJ Eoff 关断开关损耗 0.78 mJ Ets 总开关损耗 2.86 mJ ©2011 飞兆半导体公司 FGA60N65SMD Rev. C2 VCC = 400 V, IC = 60 A, RG = 3 W, VGE = 15 V, 感性负载， TC = 175°C 2 www.fairchildsemi.com FGA60N65SMD — 650 V, 60 A 场截止 IGBT 热性能 符号 Qg 参数 测试条件 总栅极电荷 Qge 栅极－发射极间电荷 Qgc 栅极－集电极间电荷 二极管电气特性 T C VCE = 400 V, IC = 60 A, VGE = 15 V 参数 VFM 二极管正向电压 Erec 反向恢复电能 trr 二极管反向恢复时间 Qrr 二极管反向恢复电荷 FGA60N65SMD Rev. C2 单位 189 nC 284 20 30 nC 91 137 nC = 25°C 除非另有说明 符号 ©2011 飞兆半导体公司 最小值 典型值 最大值 测试条件 IF = 30 A IF =30 A, dIF/dt = 200 A/μs 3 最小值 典型值 最大值 TC = 25°C 2.1 TC = 175°C 1.7 TC = 175°C 127 TC = 25°C TC = 175°C 47 2.6 单位 V uJ ns 212 TC = 25°C 87 TC = 175°C 933 nC www.fairchildsemi.com FGA60N65SMD — 650 V, 60 A 场截止 IGBT IGBT 电气特性 （续） 图 1. 典型输出特性 180 图 2. 典型输出特性 20V 15V o TC = 25 C 180 TC = 175 C 120 90 60 VGE = 8V 90 VGE = 8V 60 30 0 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 图 3. 典型饱和电压特性 2 4 Collector-Emitter Voltage, VCE [V] 6 图 4. 典型饱和电压与可变电流强度下壳温的关系 3.5 Collector-Emitter Voltage, VCE [V] 180 Common Emitter VGE = 15V 150 Collector Current, IC [A] 10V 120 30 o TC = 25 C o TC = 175 C 120 90 60 30 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3.0 120A 2.5 60A 2.0 IC = 30A 1.5 1.0 25 0 5 图 5. 饱和电压与 VGE 的关系 50 75 100 125 150 o Case Temperature, TC [ C] 175 图 6. 饱和电压与 VGE 的关系 20 20 Common Emitter Common Emitter o Collector-Emitter Voltage, VCE [V] T C = 25 C 16 12 8 60A 120A 4 IC = 30A 0 12V 150 10V Collector Current, IC [A] Collector Current, IC [A] 150 Collector-Emitter Voltage, VCE [V] 20V 15V o 12V o TC = 175 C 16 12 8 60A IC = 30A 0 4 ©2011 飞兆半导体公司 FGA60N65SMD Rev. C2 8 12 16 Gate-Emitter Voltage, V GE [V] 4 20 4 120A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA60N65SMD — 650 V, 60 A 场截止 IGBT 典型性能特征 FGA60N65SMD — 650 V, 60 A 场截止 IGBT 典型性能特征 图 7. 电容特性 图 8. 栅极电荷特性 7000 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] 6000 o TC = 25 C Capacitance [pF] 5000 4000 Cies 3000 2000 Coes 1000 TC = 25 C 12 VCC = 200V 300V 9 400V 6 3 Cres 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 0 0 30 图 9. 导通特性与栅极电阻的关系 40 200 图 10. 关断特性与栅极电阻的关系 6000 100 Common Emitter VCC = 400V, VGE = 15V IC = 60A 80 tr 60 o Switching Time [ns] Switching Time [ns] 80 120 160 Gate Charge, Qg [nC] 40 td(on) Common Emitter VCC = 400V, VGE = 15V IC = 60A 20 1000 TC = 25 C o TC = 175 C td(off) 100 tf o TC = 25 C o TC = 175 C 10 0 10 20 30 40 Gate Resistance, RG [Ω] 10 50 图 11. 开关损耗与栅极电阻的关系 0 10 20 30 Gate Resistance, RG [Ω] 40 50 图 12. 导通特性与集电极电流的关系 1000 10 Common Emitter VGE = 15V, RG = 3Ω Switching Time [ns] Switching Loss [mJ] o TC = 25 C Eon Eoff 1 Common Emitter VCC = 400V, VGE = 15V IC = 60A o TC = 175 C 100 tr td(on) 10 o TC = 25 C o TC = 175 C 0.1 0 10 ©2011 飞兆半导体公司 FGA60N65SMD Rev. C2 20 30 40 Gate Resistance, RG [Ω] 1 0 50 30 60 90 120 Collector Current, IC [A] 5 www.fairchildsemi.com 图 13. 关断特性与集电极电流的关系 图 14. 开关损耗与集电极电流的关系 10 1000 Eon Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 3Ω 1 Eoff 0.1 Common Emitter VGE = 15V, RG = 3Ω o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 0.01 1 0 30 60 90 120 0 30 Collector Current, IC [A] 图 15. 负载电流与频率的关系 120 Collector Current, Ic [A] Collector Current, IC [A] Tc = 100 C 10μs 100 o o 120 300 Tc = 100 C Power Dissipation : 300W 80 90 图 16. SOA 特性 Vcc = 400 V Load Current : peak of square wave Duty cycle : 50% 100 60 Collector Current, IC [A] 60 40 10 DC 100μs 1ms 10 ms 1 *Notes: 0.1 o 1. TC = 25 C 20 o 2. TJ = 175 C 3. Single Pulse 0.01 0 1k 10k 100k Switching Frequency, f [Hz] 1 1M 图 17. 正向特性 10 100 Collector-Emitter Voltage, VCE [V] 1000 图 18. 反向恢复电流 200 14 100 12 Reverse Recovery Current, Irr [A] Forward Current, IF [A] o o TC = 175 C o TC = 125 C o TC = 75 C 10 o TC = 175 C o TC = 125 C o o TC = 25 C TC = 75 C o TC = 25 C 0 ©2011 飞兆半导体公司 FGA60N65SMD Rev. C2 1 2 3 Forward Voltage, VF [V] 4 o TC = 175 C 10 8 6 di/dt = 200A/uS 4 di/dt =100A/uS 2 0 1 TC = 25 C 0 10 20 30 40 Forward Current, IF [A] 6 www.fairchildsemi.com FGA60N65SMD — 650 V, 60 A 场截止 IGBT 典型性能特征 图 19. 反向恢复时间 图 20. 存储电荷 400 1400 o Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] o TC = 25 C o TC = 175 C 300 200 didt =100A/uS didt = 200A/uS 50 0 0 15 30 45 o TC = 175 C 1000 800 600 didt =100A/uS 400 didt = 200A/uS 200 0 60 TC = 25 C 1200 0 10 Forward Current, IF [A] 20 30 40 50 60 Forward Current, IF [A] 图 21. IGBT 的瞬态热阻 Thermal Response [Zthjc] 0.5 0.1 0.5 0.2 0.01 0.1 0.05 0.02 0.01 PDM t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] 图 22. 二极管瞬态热阻抗 Thermal Response [Zthjc] 3 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 0.005 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2011 飞兆半导体公司 FGA60N65SMD Rev. C2 7 www.fairchildsemi.com FGA60N65SMD — 650 V, 60 A 场截止 IGBT 典型性能特征 FGA60N65SMD — 650 V, 60 A 场截止 IGBT 机械尺寸 图 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65 封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 / 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞 兆半导体的全部产品。 随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸： http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003 尺寸单位为毫米 ©2011 飞兆半导体公司 FGA60N65SMD Rev. 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