Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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FGAF40N60SMD
600 V, 40 A Field Stop IGBT
Features
General Description
• Maximum Junction Temperature : TJ = 175oC
Using novel field stop IGBT technology, ON semiconductor’s
new series of field stop 2nd generation IGBTs offer the optimum
performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Swiching: EOFF = 6.5 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Sewing Machine, CNC
• Home Appliances, Motor-Control
C
G
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
20
V
IC
ICM (1)
IF
IFM (1)
PD
Collector Current
@ TC = 25oC
80*
A
Collector Current
@ TC = 100oC
40*
A
Pulsed Collector Current
Diode Forward Current
@ TC = 25oC
Diode Forward Current
@ TC = 100oC
Pulsed Diode Maximum Forward Current
o
120*
A
40*
A
20*
A
120*
A
W
Maximum Power Dissipation
@ TC = 25 C
115
Maximum Power Dissipation
@ TC = 100oC
58
W
TJ
Operating Junction Temperature
-55 to +175
o
Tstg
Storage Temperature Range
-55 to +175
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
C
Notes:
*Drain current limited by maximum junction temperature
1: Repetitive rating: Pulse width limited by max. junction temperature
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
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1
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
December 2016
Symbol
Parameter
Typ.
Max.
Unit
o
RJC(IGBT)
Thermal Resistance, Junction to Case
-
1.3
RJC(Diode)
Thermal Resistance, Junction to Case
-
3.27
oC/W
C/W
RJA
Thermal Resistance, Junction to Ambient
-
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGAF40N60SMD
FGAF40N60SMD
TO-3PF
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
-
0.6
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250A, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
3.5
4.5
6.0
V
IC = 40A, VGE = 15V
-
1.9
-
V
IC = 40A, VGE = 15V,
TC = 175oC
-
2.1
-
V
-
1880
-
pF
-
180
-
pF
-
50
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
12
-
ns
tr
Rise Time
-
20
-
ns
td(off)
Turn-Off Delay Time
-
92
-
ns
tf
Fall Time
-
13
17
ns
Eon
Turn-On Switching Loss
-
0.87
-
mJ
Eoff
Turn-Off Switching Loss
-
0.26
0.34
mJ
Ets
Total Switching Loss
-
1.13
-
mJ
VCC = 400V, IC = 40A,
RG = 6, VGE = 15V,
Inductive Load, TC = 25oC
td(on)
Turn-On Delay Time
-
15
-
ns
tr
Rise Time
-
22
-
ns
td(off)
Turn-Off Delay Time
-
116
-
ns
tf
Fall Time
-
16
-
ns
VCC = 400V, IC = 40A,
RG = 6, VGE = 15V,
Inductive Load, TC = 175oC
Eon
Turn-On Switching Loss
-
0.97
-
mJ
Eoff
Turn-Off Switching Loss
-
0.60
-
mJ
Ets
Total Switching Loss
-
1.57
-
mJ
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
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2
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Thermal Characteristics
Symbol
Qg
Parameter
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 40A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
(Continued)
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Min.
Typ.
Max
Unit
-
119
-
nC
-
13
-
nC
-
58
-
nC
Unit
TC = 25°C unless otherwise noted
Test Conditions
IF = 20A
IF =20A, dIF/dt = 200A/s
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
Min.
Typ.
Max
TC = 25oC
-
2.3
-
TC = 175oC
-
1.67
-
TC = 175oC
-
48.9
-
TC =
25oC
-
36
-
-
110
-
TC = 25oC
-
46.8
-
TC = 175oC
-
445
-
TC = 175oC
V
uJ
ns
nC
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3
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
VGE= 20V
120
12V
90
VGE= 20V
15V
Collector Current, IC [A]
Collector Current, IC [A]
120
Figure 2. Typical Output Characteristics
10V
60
30
o
TC = 25 C
90
15V
12V
10V
60
8V
30
o
8V
0
0
TC = 175 C
2
4
6
8
Collector-Emitter Voltage, VCE [V]
0
10
Figure 3. Typical Saturation Voltage
Characteristics
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
10
Figure 4. Transfer Characteristics
120
120
90
60
Common Emitter
VGE = 15V
30
o
Collector Current, IC [A]
Collector Current, IC [A]
Common Emitter
VCE = 20V
TC = 25 C
90
o
TC = 175 C
60
30
o
TC = 25 C
o
TC = 175 C
0
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
15
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
3
6
9
12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
4
80A
3
40A
2
IC = 20A
1
25
0
50
75
100
125
150
o
Case Temperature, TC [ C]
Common Emitter
o
TC = -40 C
16
12
80A
8
4
0
175
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
40A
IC = 20A
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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4
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
o
TC = 25 C
16
12
80A
8
40A
4
0
IC = 20A
4
8
12
16
Gate-Emitter Voltage, VGE [V]
Common Emitter
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
o
TC = 175 C
16
12
80A
8
40A
4
IC = 20A
0
20
Figure 9. Capacitance Characteristics
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
4000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Gate-Emitter Voltage, VGE [V]
o
o
TC = 25 C
Capacitance [pF]
3000
Cies
2000
1000
Coes
TC = 25 C
400V
12
VCC = 200V
300V
9
6
3
Cres
0
0.1
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
120
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
100
10s
tr
100s
10
1ms
Switching Time [ns]
Collector Current, Ic [A]
40
80
Gate Charge, Qg [nC]
10 ms
DC
1
*Notes:
o
0.1
1. TC = 25 C
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
o
TC = 25 C
2. TJ =175 C
3. Single Pulse
o
TC = 175 C
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
1
1000
0
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
10
20
30
40
Gate Resistance, RG []
50
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5
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
1000
Common Emitter
VGE = 15V, RG = 6
o
TC = 25 C
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
10
o
Switching Time [ns]
Switching Time [ns]
td(off)
TC = 175 C
100
tr
10
td(on)
o
TC = 25 C
o
TC = 175 C
1
0
10
20
30
40
1
20
50
30
40
Gate Resistance, RG []
50
60
70
80
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
1000
5
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 6
o
Eon
1
Eoff
IC = 40A
TC = 25 C
o
TC = 25 C
o
TC = 175 C
1
20
30
40
50
60
Common Emitter
VCC = 400V, VGE = 15V
o
TC = 175 C
70
0.1
80
0
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
10
20
30
40
Gate Resistance, RG []
50
Figure 18. Turn off Switching
SOA Characteristics
200
6
Collector Current, IC [A]
Switching Loss [mJ]
100
Eon
1
Eoff
Common Emitter
VGE = 15V, RG = 6
o
10
Safe Operating Area
TC = 25 C
o
VGE = 15V, TC = 175 C
o
TC = 175 C
0.1
20
1
30
40
50
60
70
80
Collector Current, IC [A]
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
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6
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Power Dissipation
50
120
Common Emitter
VGE = 15V
40
Power Dissipation, PD [W]
Collector Current, Ic[A]
Common Emitter
VGE = 15V
30
20
10
0
25
50
75
100
125
150
o
Case Temperature, TC [ C]
90
60
30
0
25
175
Figure 21. Load Current Vs. Frequency
75
100
125
150
o
Case Temperature, TC [ C]
175
Figure 22. Forward Characteristics
100
100
VCC = 400V
90
load Current : peak of square wave
80
Duty cycle : 50%
70
T = 100 C
Forward Current, IF [A]
Collector Current, IC [A]
50
o
C
Powe Dissipation = 58 W
60
50
o
Tc = 100 C
40
30
o
TC = 175 C
10
o
TC = 25 C
20
10
0
1k
1
10k
100k
Switching Frequency, f [Hz]
1M
0
Figure 23. Reverse Current
1
2
3
Forward Voltage, VF [V]
4
Figure 24. Stored Charge
1000
700
Reverse Currnet, IR [A]
Stored Recovery Charge, Qrr [nC]
o
100
o
TC = 175 C
10
o
TC = 100 C
1
0.1
o
0.01
TC = 25 C
1E-3
0
100
200
300
400
Reverse Voltage, VR [V]
500
TC = 25 C
600
o
TC = 175 C
500
400
300
di/dt = 200A/s
200
di/dt = 100A/s
100
0
600
0
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
5
10
15 20 25 30 35
Forwad Current, IF [A]
40
45
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7
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 25. Reverse Recovery Time
200
o
Reverse Recovery Time, trr [ns]
TC = 25 C
o
TC = 175 C
150
100
di/dt = 100A/s
di/dt = 200A/s
50
0
0
5
10 15 20 25 30 35
Forward Current, IF [A]
40
45
Figure 26.Transient Thermal Impedance of IGBT
2
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
PDM
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 27.Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
4
0.5
1
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
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8
15.70
15.30
9.90
4.60
4.40
3.20
2.80
3.80
3.40
7.75
10.20
9.80
16.70
16.30
26.70
26.30
14.70
14.30
1.93
15.00
14.60
1
2
23.20
22.80
16.70
16.30
2.20
1.80
2.70
2.30
3
2.20
(3X)
1.80
4.20
3.80
3.50
3.10
0.95
(3X)
0.65
5.75
5.15
5.75
5.15
5.70
5.30
2.20
1.80
3.50
3.10
NOTES:
A. THIS PACKAGE CONFORMS TO SC94
JEITA PACKAGING STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. PIN 2 CONNECTS TO DAP.
E. DRAWING FILE NAME: TO3PFA03REV2
1.10
0.80
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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