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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FGAF40N60UFD
Ultrafast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
High input impedance
CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3PF
E
G C E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
FGAF40N60UFD
600
± 20
40
20
160
15
160
100
40
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2004 Fairchild Semiconductor Corporation
Typ.
----
Max.
1.2
2.6
40
Units
°C/W
°C/W
°C/W
FGAF40N60UFD Rev. A
FGAF40N60UFD
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
3.5
---
5.1
2.3
3.1
6.5
3.0
--
V
V
V
----
1075
170
50
----
pF
pF
pF
-------------------
15
30
65
35
470
130
600
30
37
110
80
500
310
810
77
20
25
14
--130
100
--1000
--200
250
--1200
150
30
40
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
Min.
--
Typ.
1.4
Max.
1.7
Units
--
1.3
--
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
IC = 40A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 20A,
VGE = 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
©2004 Fairchild Semiconductor Corporation
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 15A
TC = 100°C
IF = 15A,
di/dt = 200A/us
TC = 25°C
--
50
95
TC = 100°C
--
74
--
TC = 25°C
--
4.5
6.0
TC = 100°C
--
6.5
--
TC = 25°C
--
80
180
TC = 100°C
--
220
--
V
ns
A
nC
FGAF40N60UFD Rev. A
FGAF40N60UFD
Electrical Characteristics of the IGBT T
80
Common Emitter
Tc = 25℃
20V
15V
120
Common Emitter
VGE=15V
Tc= 25℃
Tc= 125℃
70
Collector Current , Ic (A)
Collector Current, Ic (A)
FGAF40N60UFD
160
12V
80
VGE = 10V
40
60
50
40
30
20
10
0
0
0
2
4
6
0.5
8
1
Collector-Emitter Voltage,VCE(V)
10
Collector-Emitter Voltage, VCE(V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
30
4
Common Emitter
Vge=15V
Vcc = 300V
Load Current : peak of square wave
3
40A
Load Current [A]
Collector - Emitter Voltage, VCE [V]
25
20A
2
Ic=10A
1
20
15
10
5
0
0
30
60
90
120
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 24W
0
150
0.1
1
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs.
Case Temperature at Variant Current Level
1000
20
[V]
Common Emitter
TC = 25℃
CE
16
Collector - Emitter Voltage, V
[V]
CE
100
Fig 4. Load Current vs. Frequency
20
Collector - Emitter Voltage, V
10
Frequency [kHz]
12
8
20A
4
40A
IC = 10A
0
Common Emitter
TC = 125℃
16
12
8
40A
4
20A
Ic=10A
0
0
4
8
12
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2004 Fairchild Semiconductor Corporation
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
FGAF40N60UFD Rev. A
300
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
2500
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃ - - - -
Switching Time (ns)
Cies
Capacitance (pF)
2000
Coes
1500
FGAF40N60UFD
3000
1000
Cres
100
Ton
Tr
500
10
0
1
1
30
10
10
Fig 7. Capacitance Characteristics
200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
2000
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
Common Emitter
Vcc=300V,VGE=± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
1000
Toff
Eon
Switching Time (uJ)
Switching Time (ns)
100
Gate Resistance, RG( Ω )
Collector-Emitter Voltage, VCE (V)
100
Tf
Eoff
100
Tf
50
20
1
10
100
200
1
10
100
200
Gate Resistance, RG( Ω )
Gate Resistance, RG( Ω )
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
200
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10Ω
100
TC = 25℃
Ton
Common Emitter
V CC = 300V, VGE = ± 15V
10
R G = 10 Ω
Tr
Switching Time [nS]
Switching Time (ns)
TC = 125℃
Toff
100
Toff
Tf
TC = 25℃
Tf
TC = 125℃
20
10
15
20
25
30
Collector Current, Ic (A)
Fig 11. Turn-On Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
35
40
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGAF40N60UFD Rev. A
FGAF40N60UFD
15
3000
Common Emitter
RL=15 Ω
Eon
100 Eoff
Common Emitter
VCC = 300V, VGE = ± 15V
Eoff
RG = 10Ω
TC = 25℃
(Tc=25 ℃)
12
Gate-Emitter Voltage, V GE (V)
Switching Time (uJ)
1000
300V
200V
9
Vcc=100V
6
3
TC = 125℃
10
0
10
15
20
25
30
35
40
0
30
Collector Current , Ic (A)
60
90
120
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
Ic MAX (Pulsed)
100
Collector Current, IC [A]
Collector Current, Ic [A]
100
50µs
Ic MAX (Continuous)
100µs
1ms
10
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
10
1
Safe Operating Area
o
V GE=20V, TC=100 C
0.1
0.1
1
1
10
100
100
1000
Collector-Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
Thermal Response [Zthjc]
10
1000
1
0 .5
0 .2
0 .1
0 .1
0 .0 5
Pdm
0 .0 2
t1
0 .0 1
t2
0 .0 1
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
sin gle p ulse
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
IF = 15A
Reverse Recovery Current, I rr [A]
Forward Current, I
V R = 200V
T C = 100℃
100
FGAF40N60UFD
100
T C = 25℃
10
TC = 25℃
TC = 100℃
10
1
1
0
1
2
200
3
Fig 18. Forward Characteristics
800 1000
Fig 19. Reverse Recovery Current
800
120
V R = 200V
V R = 200V
I F = 15A
IF = 15A
Reverce Recovery Time, t rr [ns]
T C = 25℃
600
600
di/dt [A/us]
Forward Voltage Drop, V
Stored Recovery Charge, Q rr [nC]
400
T C = 100℃
400
200
0
TC = 25℃
100
TC = 100℃
80
60
40
20
200
400
di/dt [A/us]
Fig 20. Stored Charge
©2004 Fairchild Semiconductor Corporation
600
800 1000
200
400
600
800 1000
di/dt [A/us]
Fig 21. Reverse Recovery Time
FGAF40N60UFD Rev. A
FGAF40N60UFD
Package Dimensions
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
22.00 ±0.20
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
0.85 ±0.03
23.00 ±0.20
10
°
10.00 ±0.20
(1.50)
2.00 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
14.80 ±0.20
3.00 ±0.20
ø3.60 ±0.20
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I8
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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